| 平面型共振隧穿二极管和其组成MOBILE |
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| 引用本文： | 胡留长,郭维廉,张世林,梁惠来,姚素英.平面型共振隧穿二极管和其组成MOBILE[J].天津大学学报(自然科学与工程技术版),2006,39(11):1360-1363. |
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| 作者姓名： | 胡留长 郭维廉 张世林 梁惠来 姚素英 |
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| 作者单位： | 天津大学电子信息工程学院,天津300072 |
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| 基金项目： | 超高速专用集成电路重点实验室基金 |
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| 摘 要： | 为了解决传统台面型共振隧穿二极管制作过程中横向钻蚀问题，提出了一种采用离子注入法在N^＋GaAs衬底上制作平面型共振隧穿二极管，通过离子注入对器件之间进行隔离，取代了台面制作工艺中的通过湿法腐蚀隔离器件的目的．研究了它的I-V特性，测得的峰谷电流比为3．4．研究了由平面型共振隧穿二极管构成的单双稳态逻辑单元，实现了作为反相器的功能．
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| 关 键 词： | 平面型共振隧穿二极管 离子注入 峰谷电流比 |
| 文章编号： | 0493-2137（2006）11-1360-04 |
| 收稿时间： | 2006-03-01 |
| 修稿时间： | 2006-03-012006-05-18 |
Planar Resonant Tunneling Diodes and Their MOBILE |
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| HU Liu-chang,GUO Wei-lian,ZHANG Shi-lin,LIANG Hui-lai,YAO Su-ying.Planar Resonant Tunneling Diodes and Their MOBILE[J].Journal of Tianjin University(Science and Technology),2006,39(11):1360-1363. |
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| Authors: | HU Liu-chang GUO Wei-lian ZHANG Shi-lin LIANG Hui-lai YAO Su-ying |
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| Institution: | School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China |
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| Abstract: | To resolve the undercut problem in the fabrication of conventional resonant tunneling diodes,a method was proposed for the fabrication of planar resonant tunneling diodes in N~ GaAs substrate through ion implant.The resonant tunneling diodes were separated by ion implant instead of mesa-etching in the fabrication of conventional resonant tunneling diodes.The current-voltage characteristics were studied and the peak valley current ratio(PVCR) was 3.4.The monostable bistable logic element(MOBILE) constructed by planar resonant tunneling diodes is investigated and realizes the function of inverter. |
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| Keywords: | planar resonant tunneling diodes ion implant peak valley current ratio(PVCR) |
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