| 外加直流电场对PdSnOxMIS型氧探测器氧吸附行为影响的研究 |
| |
| 引用本文： | 徐静芳.外加直流电场对PdSnOxMIS型氧探测器氧吸附行为影响的研究[J].华东师范大学学报(自然科学版),1992(2):31-34. |
| |
| 作者姓名： | 徐静芳 |
| |
| 作者单位： | 华东师范大学电子科学技术系 |
| |
| 摘 要： | 研制成了一种新型的Pd-SnOxMIS结构型氧探测器.这种探测器能在室温下探测小于0.1乇的氧分压.本文简扼报告了这种器件的结构、制造工艺和氧吸附与消吸附特性,着重阐述外加直流偏压对器件氧吸附行为的影响.实验结果表明:在实验氧分压范围内,正向直流偏压会抑制器件的氧吸附响应,负向直流偏压会增加器件氧吸附响应.文中还对这种电吸附行为进行了讨论.
|
| 关 键 词： | 氧探测器 氧吸附 直流电场 |
Influence of Applied D. C. Voltage on Oxygen Adsorption Behavior of Pd-SnOx MIS O_2 Detector. |
| |
| XU JINGFANG.Influence of Applied D. C. Voltage on Oxygen Adsorption Behavior of Pd-SnOx MIS O_2 Detector.[J].Journal of East China Normal University(Natural Science),1992(2):31-34. |
| |
| Authors: | XU JINGFANG |
| |
| Institution: | Department of Electronic Science and Technology |
| |
| Abstract: | A novel type of Pd-SnOx MIS oxygen detector has been developed.This device can detect oxygen at room temperature under oxygen partial pressure<0.1.torr.In this paper, the structure, processes and the characteristics of the device in response to oxygen adsorption and desorption behavior are presented briefly.The infiuence of the applied gate voltage upon the device adsorption of oxygen is emphatically illustrated.Experimental results showed that the oxygen adsorptive response by the device was reduced significantly under a positive D.C.bias for all experimental region of O_2 partial pressures.On the other hand, an applied negative D.C.voltage increased the devices adsorption response of oxygen.A discussion concerning this electroabsorption behavior of the device is also provided. |
| |
| Keywords: | oxygen detector oxygen adsorption DC applied field |
| 本文献已被 CNKI 维普 等数据库收录！ |
