氧化钽/氧化铝薄膜的阻变特性和突触特性

通过微电子加工工艺,制备出具有ITO/TaO_x/AlO_x/Ti结构的双介质层阻变存储器.器件中引入的氧化铝介质层有效地减小了器件的运行电流,降低了高/低阻态间切换所需的功耗,并增大了高/低阻态电阻比值.研究表明,器件的高低态电阻与其切换电压均有良好的稳定性和均匀性,且器件表现出可靠的擦写性能与保持性能.进一步研究表明,器件高阻态导电受肖特基发射机制主导,低阻态导电受空间电荷限制机制主导.器件还具有连续可调的电阻渐变行为,利用反复电脉冲刺激下的器件电阻变化来表征突触的权值,可以模拟突触行为.

Resistive switching characteristics and synaptic properties of TaOx</i>/AlOx bilayer

The bi-layer resistive random access memory with ITO/TaOx/AlOx/Ti structure was prepared by micro-fabrication process. The introduced alumina dielectric layer effectively reduces the operating current of the device, reduces the power consumption required for switching between high/low resistance states and increases the resistance ratio of high/low resistance states. Furthermore, the high and low resistance state and switching voltage of TaOx/AlOx double layer devices have good stability and uniformity during continuous switching, and the device has reliable endurance and retention performance. Further research shows that high resistance state is dominated by Schottky emission mechanism while low resistance state is dominated by Space charge limiting current conduction. The device also has a continuously adjustable gradually resistance switching behavior. The change of device resistance under repeated electrical impulse can be used to characterize the synaptic weight and simulate the biological behavior of synapses.