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| 量子阱LD有源区量子阱数目的优化设计 | |
| 引用本文： | 成强,孙寅聪,敖天勇,王渊旭,张德权.量子阱LD有源区量子阱数目的优化设计[J].河南科学,2009,27(12):1562-1565. |
| 作者姓名： | 成强 孙寅聪 敖天勇 王渊旭 张德权 |
| 作者单位： | 1. 河南大学,物理与电子学院,河南,开封,475004 2. 河南省科学院,能源研究所有限公司,郑州,450008 3. 河南省科学院,郑州,450002 |
| 基金项目： | 河南省科技厅基础前沿计划 |
| 摘 要： | 采用直观的载流子、光子库模型，导出半导体激光器速率方程，得到输入电流、输出光功率的关系以及激光器腔体参数与注入电流的关系，从而给出在设计激光器时遇到的相关限制的方程，以及LD电流与某种形式的电流增益转换因子的关系，根据增益曲线上的最佳工作点来优化有源区量子阱数目．给出了共面量子阱LD在固定有源长度、固定无源区长度的共面量子阱激光器的量子阱数目优化方案． |
| 关 键 词： | 量子阱LD 腔体参数 有源区量子阱数目 优化设计 |
Optimization Design of Quantum Wells Number in Active Cavity of Quantum Well LD |
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| Cheng Qiang,Sun Yincong,Ao Tianyong,Wang Yuanxu,Zhang Dequan.Optimization Design of Quantum Wells Number in Active Cavity of Quantum Well LD[J].Henan Science,2009,27(12):1562-1565. | |
| Authors: | Cheng Qiang Sun Yincong Ao Tianyong Wang Yuanxu Zhang Dequan |
| Institution: | Cheng Qiang, Sun Yincong, Ao Tianyong, Wang Yuanxu, Zhang Dequan (1. School of Physics and Electronics, Henan University, Kaifeng 475004, Henan China; 2. Energy Research Institute Co Ltd, Henan Acaclemy of Science, Zhengzhou 450008, China; 3. Henan Academy of Sciences, Zhengzhou 450002, China) |
| Abstract: | The relationship between laser cavity parameter and the injection current can be obtained based on input current and output light power of Laser Diode(LD),and then the relative limited equation of LD design,i.e.,the relationship between LD current and conversion factor of current gain,is given accordingly.The number of quantum wells is optimized according to the optimal point of the gain curves.Optimized scheme of the number of quantum wells of coplanar quantum wells LD is given in the condition of fixed active cavity length and the inactive cavity length. |
| Keywords: | quantum well LD cavity parameter quantum wells number optimization design |
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