一种制备SiO2膜的方法——氧等离子体处理聚硅烷涂层

作者利用低温氧等离子体处理聚硅烷涂层，成功地制备了SiO2膜．由IR谱给出的Si-O键的吸收峰波数，随氧等离子体处理时间的不同在1065～1088cm-1范围变化；XPS谱给出Si2p的结合能为103．3～103．5eV，硅氧原子比为1：1．99；激光椭园偏振仪测得折射率在1．30～1．55范围；MOS电容的高频C-V特性曲线表明，平带电压为正，计算得氧化物电荷的电性为负，密度为6．6×1010～8．8×1011cm-2，其大小可以通过改变处理条件进行控制；BT实验表明，可动电荷密度为(3～6)×1010cm-2，这种新型的SiO2膜可望在微电子器工艺中得到应用．

A METHOD OF MADE SiO2 THIN FILM －－Polysilanes COAT WERRE TREATED WITH OXYGEN PLASMA

A type of SiO2 thin films was successfully obtained in a condition of temperature less than 60℃ when polysilanec coat were treated with oxygen plasma. IR absorption peaks of these films are in 1065～1088cm-1, Si2p binding energy is in 103.3～103.5eV, Si:O=1:1.99. The refractive index of htese films are in the range of 1.30～1.55. The C-V curves of these films MOS capacitors indicated that their flatband voltage are positive, oxide charges are negative. Their densities are in the range of 6.6×1010～8.8×1011 .cm-2 by calculation and they can be controlled by the condition of oxygen plasma. Mobile charges are in (3～6)×1010cm-2 by treaument of rhe bias-temperature. The type of SiO2 films may find a promising application in microelectronic technology.