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Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature |
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| Authors: | EnPing Wang JiMing Bian FuWen Qin Dong Zhang YueMei Liu Yue Zhao ZhongWei Duan Shuai Wang |
| Institution: | 1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, China 2. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China 3. Key Laboratory of Inorganic Coating Materials, Chinese Academy of Sciences, Shanghai, 200050, China |
| Abstract: | Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) with trimethyl gallium (TMGa) as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and Raman scattering. The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage (I–V) curve. The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes. |
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