| BiFeO_3薄膜的so-lgel制备及其铁电性能研究 |
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| 引用本文： | 陈芳,李超,叶万能.BiFeO_3薄膜的so-lgel制备及其铁电性能研究[J].湖北大学学报(自然科学版),2010,32(4):414-417. |
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| 作者姓名： | 陈芳 李超 叶万能 |
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| 作者单位： | [1]空军第一航空学院物理教研室,河南信阳464000 [2]青岛大学纤维新材料与现代纺织国家重点实验室培育基地,山东青岛266071 |
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| 摘 要： | 采用sol-gel方法在Pt(111)/Ti/SiO2/Si(100)衬底上制备出了(100)择优取向的BiFeO3薄膜.XRD研究表明,600～650℃退火的薄膜结晶较好.AFM形貌显示,650℃退火的薄膜中等轴状晶粒大小均匀(直径100～150nm),薄膜较为致密.电学性能测量结果表明,650℃退火、厚度为840nm的薄膜的2Pr值为2.8mC/cm2;在50kV/cm外加电场下,漏电流为2.7×10-5 A/cm2.电流-电压特性显示,在欧姆区之上,薄膜的主要导电机制为波尔-弗兰克尔发射导电.
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| 关 键 词： | 溶胶-凝胶 BiFeO3薄膜 铁电性 导电机理 |
Sol-gel preparation and electric properties of BiFeO3 thin films |
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| CHEN Fang,LI Chao,YE Wanneng.Sol-gel preparation and electric properties of BiFeO3 thin films[J].Journal of Hubei University(Natural Science Edition),2010,32(4):414-417. |
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| Authors: | CHEN Fang LI Chao YE Wanneng |
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| Institution: | 1.Physics Teaching and Research Department,The First Aeronautical College of Air Force,Xinyang 464000,China; 2.Laboratory of Fiber Materials and Modern Textile,The Growing Base for State Key Laboratory, Qingdao University,Qingdao 266071,China) |
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| Abstract: | BiFeO3 thin films of（100） preferential orientation were deposited through sol-gel process on（111）Pt/Ti/SiO2/（100）Si substrates.X-ray diffraction pattern indicates that good annealing temperature of films are 600~650 ℃.The dense thin film annealed at 650 ℃was composed of uniformed grains with equiaxed shape（100~150 nm in diameter）.The film（840 nm） annealed at 650 ℃ show very low remanent polarization（2Pr） of 2.8 mC/cm2 and large leakage current of 2.7×10-5 A/cm2 at 50 kV/cm.The main conduction mechanism of the thin films is Poole-Frankel emission conduction above the ohmic region. |
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| Keywords: | sol-gel BiFeO3 film ferroelectricity conduction mechanism |
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