| GaN基场效应器件Monte Carlo模拟 |
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| 引用本文： | 周春红.GaN基场效应器件Monte Carlo模拟[J].南通大学学报(自然科学版),2007,6(4):27-30. |
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| 作者姓名： | 周春红 |
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| 作者单位： | 中国药科大学,物理教研室,江苏,南京,210008 |
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| 摘 要： | 基于AlGaN/GaN异质结的高电子迁移率晶体管(HEMT)在高温、高功率微波器件方面有极其重要的应用前景.文章用自洽-耦合蒙特卡罗(Monte Carlo)方法对AlGaN/GaN异质结构场效应晶体管作了模拟,给出了器件直流特性的Monte Carlo模拟结果,包括器件的粒子分布及器件的等势线分布,最后给出器件在不同栅电压下的直流输出特性.文章的模拟结果对研究GaN基场效应器件有指导意义.
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| 关 键 词： | 蒙特卡罗模拟 AlGaN/GaN异质结 高电子迁移率晶体管 |
| 文章编号： | 1673-2340（2007）04-0027-04 |
| 收稿时间： | 2007-10-21 |
| 修稿时间： | 2007年10月21 |
Monte Carlo Simulation for the Field-effect Transistor Grown on GaN |
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| Authors: | ZHOU Chun-hong |
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| Abstract: | The high-electron mobility transistor(HEMT),based on AlGaN/GaN heterostructure,has a wide and prospective application in microwave devices of high temperature and high power.Self-consistent and coupling Monte-Carlo model is used to simulate the direct current properties of AlGaN/GaN heterostructure field-effect transistor.The simulation results,including the distributions of particles and the potential,are presented in this paper.The simulation results of the source-drain current-voltage(I-V) curve at different gate voltages are also given here.The simulation results based on Monte Carlo method are very significant to the experimental research on the field-effect transistor grown on GaN. |
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| Keywords: | Monte Carlo simulation AlCaN/Gan heterostructure high-electron mobility transistor(HEMT) |
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