| Si/Si低温键合界面的XPS研究 |
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| 引用本文： | 张小英,阮育娇,陈松岩,王元樟,甘亮勤,杜旭日.Si/Si低温键合界面的XPS研究[J].厦门理工学院学报,2010,18(3):20-23. |
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| 作者姓名： | 张小英 阮育娇 陈松岩 王元樟 甘亮勤 杜旭日 |
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| 作者单位： | 1. 厦门理工学院数理系,福建,厦门,361024
2. 厦门大学物理系半导体光子学研究中心,福建,厦门,361005 |
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| 基金项目： | 国家自然科学基金重点基金资助项目，福建省自然科学基金资助项目，福建省教育厅科技项目 |
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| 摘 要： | 利用金属过渡层的方法实现了Si/Si低温键合.拉力测试表明,温度越高,键合强度越大.采用X射线光电子能谱对Si/Si键合界面进行了研究,结果表明,退火样品的界面主要为Au-Si共晶合金;Si-Au含量比随着退火温度的升高和刻蚀深度的增加而增大.
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| 关 键 词： | 硅片键合 XPS 金属过渡层 键合机理 |
XPS Study of the Interfaces of Low-temperature Si/Si Wafer Bonding |
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| ZHANG Xiao-ying,RUAN Yu-jiao,CHEN Song-yan,WANG Yuan-zhang,GAN Liang-qin,DU Xu-ri.XPS Study of the Interfaces of Low-temperature Si/Si Wafer Bonding[J].Journal of Xiamen University of Technology,2010,18(3):20-23. |
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| Authors: | ZHANG Xiao-ying RUAN Yu-jiao CHEN Song-yan WANG Yuan-zhang GAN Liang-qin DU Xu-ri |
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| Institution: | 1.Faculty of Mathematics and Physics,Xiamen University of Technology,Xiamen 361024,China;2.Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China) |
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| Abstract: | Low-temperature wafer to wafer bonding has been achieved by using intermediate metals.Tensile test shows that the higher the bonding temperature is.The greater the bonding strengthis.The Si/Si interfaces are analyzed by using X-ray photoelectron spectroscopy（XPS）.The results shows that the interface of the samples is made up of Au-Si eutectic alloy and the ratio of Si-Au increases with the annealing temperature increasing. |
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| Keywords: | XPS |
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