纳米SnO2/TiO2半导体薄膜电极的制备及其光电响应性能

采用化学沉积和电镀的方法在ITO导电玻璃表面制备SnO₂/TiO₂纳米半导体薄膜电极,用SEM,XRD进行了物性表征,并用光电流时间曲线、循环伏安法研究了薄膜电极光电流响应随时间、电压的变化情况。研究结果表明,SnO₂的掺杂有助于TiO₂薄膜表面产生的气孔孔径增大,数量变多。此法可制备具有多孔、粒径小于100nm的纳米SnO₂/TiO₂半导体薄膜电极。与纯纳米TiO₂薄膜电极相比,在光照条件下SnO₂的掺杂使得复合薄膜电极在阳极峰电位下的阳极峰电流的响应程度明显大于纯纳米TiO₂薄膜电极响应程度,有利于提高光生载流子的运输和分离效率,并从机理上阐述了光电流响应的提高归因于不同能级半导体之间的耦合效应。

Preparation of SnO2/TiO2 nanocrystalline film electrodes and their photoelectric response performance

Using chemical deposited and electroplated processes on ITO SnO 2/TiO 2 nanocrystalline film electrodes were prepared. The nanocrystalline film electrodese ware characterized by SEM and XRD.The size of SnO 2/TiO 2 particle is less than 100nm. The photoelectric response performance was investigated by electrochemical methods, such as photocurrent-time curve and CV curve. The results show that the addition of SnO 2 to the resultant film increases the size of the pores and the molecular weight. And it shows that the photoelectric conversion activities of SnO 2/TiO 2 nanocrystalline film electrodes are higher significantly than that of pure TiO 2 electrodes. Due to the hetero-phase coupling effect of nano-particles, SnO 2/TiO 2 nanocrystalline film electrodes can enhance the photoelectric conversion activity. These effects of the compose film electrodes are all attributed to the charge separation and transportation. This system is beneficial in the increased photo-produced and transform.