Effect of reactor pressure on the growth rate and structural properties of GaN films |
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Authors: | JinYu Ni Yue Hao JinCheng Zhang LinAn Yang |
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Institution: | (1) Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, 710071, China |
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Abstract: | The effect of reactor pressure on the growth rate, surface morphology and crystalline quality of GaN films grown on sapphire
by metalorganic chemical vapor deposition is studied. The results show that as the reactor pressure increases from 2500 to
20000 Pa, the GaN surface becomes rough and the growth rate of GaN films decreases. The rough surface morphology is associated
with the initial high temperature GaN islands, which are large with low density due to low adatom surface diffusion under
high reactor pressure. These islands prolong the occurrence of 2D growth mode and decrease the growth rate of GaN film. Meanwhile,
the large GaN islands with low density lead to the reduction of threading dislocation density during subsequent island growth
and coalescence, and consequently decrease the full width at half maximum of X-ray rocking curve of the GaN film.
Supported by the National Natural Science Foundation of China (Grant Nos. 60736033, 60676048) and Xi’an Applied Materials
Innovation Fund (Grant No. XAAM-200703) |
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Keywords: | GaN reactor pressure growth rate surface morphology crystalline quality |
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