| 退火对反应离子镀ITO薄膜光学特性的影响 |
| |
| 引用本文： | 李誉明,高强.退火对反应离子镀ITO薄膜光学特性的影响[J].山西师范大学学报,1999,13(2):27-31. |
| |
| 作者姓名： | 李誉明 高强 |
| |
| 作者单位： | 86176部队14分队 |
| |
| 摘 要： | 选用R.I.P.工艺,以Sn、In为蒸发物.以Gs-I型全息干板为基片,在200℃的条件下制备出ITO薄膜.经退火处理表明:退火有助于提高ITO薄膜的可见、近红外光的透射率,但退火温度有一阈值;退火不利于提高ITO薄膜的近红外反射率.
|
| 关 键 词： | 反应离子镀 ITO薄膜 退火 |
Influence of Annealing to the ITO Thin Film Optic Characteristics in Reacting Ionic Plating |
| |
| Li Yuming,Gao Qiang.Influence of Annealing to the ITO Thin Film Optic Characteristics in Reacting Ionic Plating[J].Journal of Shanxi Teachers University,1999,13(2):27-31. |
| |
| Authors: | Li Yuming Gao Qiang |
| |
| Institution: | Li Yuming Gao Qiang |
| |
| Abstract: | The ITO thin film was made under the condition of 200 C by R. I. P technology with Sn and In as evaperating agents and with Gs-I holoplate as base board. It is demonstrated through annealing that annealing is favorable for the transmitting rate of visible and near-infrared rays in ITO thin film, but the annealing temperature has a threshold value. Annealing is unfavorable for enhancing to the reflecting rate of near-infrared ray in ITO thin film. |
| |
| Keywords: | Reacting ionic plating ITO thin film Annealing |
| 本文献已被 CNKI 维普 等数据库收录！ |
|
