| 膜厚对NiO/NiFe/Cu/NiFe磁阻效应的影响 |
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| 引用本文： | 吴丹丹,李佐宜,邱进军,卢志红.膜厚对NiO/NiFe/Cu/NiFe磁阻效应的影响[J].华中科技大学学报(自然科学版),1999,27(7):3. |
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| 作者姓名： | 吴丹丹 李佐宜 邱进军 卢志红 |
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| 作者单位： | 1. 华中理工大学电子科学与技术系
2. 中国科学院上海冶金研究所 |
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| 基金项目： | 教育部部门开放研究实验室“上海交通大学薄膜与微细技术实验室”资助 |
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| 摘 要： | 用射频磁控溅射方法制备多层膜，研究了双层膜ＮｉＯ／ＮｉＦｅ的矫顽力Ｈｃ和交换耦合场Ｈｅｘ与反铁磁层ＮｉＯ、铁磁层ＮｉＦｅ厚度的关系，结果表明：ＮｉＯ厚度为７０ｎｍ时，Ｈｅｘ最大；Ｈｃ随ＮｉＯ厚度增大而增大．当ＮｉＦｅ厚度增加时，Ｈｅｘ近似线性减小；而Ｈｃ则随ＮｉＦｅ厚度增大开始有缓慢增加，然后才减小．对于ＮｉＯ（７０ｎｍ）／ＮｉＦｅ（ｔ１）／Ｃｕ（２．２ｎｍ）／ＮｉＦｅ（ｔ２）自旋阀多层膜材料（括号内的量表示厚度），研究了ＮｉＦｅ膜厚度对磁阻效应的影响，结果表明：被钉扎层ＮｉＦｅ的厚度为３ｎｍ，自由层ＮｉＦｅ的厚度为５ｎｍ时，ＭＲ值最大，约为１．６％．
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| 关 键 词： | 磁阻效应 矫顽力 交换耦合场 |
| 修稿时间： | 1999-01-05 |
The Influence of Thickness of Thin-Films on MR Effect of NiO/NiFe/Cu/NiFe Spin-Valve |
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| Wu Dandan,Li Zuoyi,Qiu Jinjun,Lu Zhihong.The Influence of Thickness of Thin-Films on MR Effect of NiO/NiFe/Cu/NiFe Spin-Valve[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1999,27(7):3. |
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| Authors: | Wu Dandan Li Zuoyi Qiu Jinjun Lu Zhihong |
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| Abstract: | Spin valves multi layer was fabricated by RF
magnetron sputtering. The influence of thickness of anti ferromagnetic layer NiO and
ferromagnetic layer NiFe on H c and H ex of NiO/NiFe double layer was studied. The
result showed that the biggest H ex was obtained when the thickness of NiO layer was 70
nm and H c was increasing as thickness of NiO was increasing. When thickness of NiFe was
increasing, H ex was approximately decreasing lineally, but H c was slowly increasing
at first and decreasing later. The influence of thickness of NiFe layer on MR effect in
NiO(70nm)/NiFe( t 1)/Cu(2.2nm)/NiFe( t 2) was also studied. The result showed that the
maximum MR value 1.6% was attained while thickness of pinned layer NiFe and free layer are
3nm and NiFe 5nm respectively. |
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| Keywords: | MR effect coercivity exchange coupling field |
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