| 硅MINP太阳电池的多子隧道效应 |
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| 引用本文： | 徐彦忠,丘思畴.硅MINP太阳电池的多子隧道效应[J].华中科技大学学报(自然科学版),1988(Z2). |
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| 作者姓名： | 徐彦忠 丘思畴 |
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| 作者单位： | 华中理工大学固体电子学系
(徐彦忠)，华中理工大学固体电子学系(丘思畴) |
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| 摘 要： | 本文对MINP电池中的多子隧道电流进行了计算分析,从其伏安特性曲线得出太阳电池所允许的氧化层厚度的极限。
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| 关 键 词： | 太阳能电池 伏安特性 隧道效应 多数载流子 |
Majority Carrier Tunneling in the Silicon MINP Solar Cell |
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| Xu Yanzhong Qiu Sichou.Majority Carrier Tunneling in the Silicon MINP Solar Cell[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1988(Z2). |
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| Authors: | Xu Yanzhong Qiu Sichou |
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| Institution: | Xu Yanzhong Qiu Sichou |
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| Abstract: | The majority carrier tunneling plays an important role in the electric conduction in silicon MINP solar cells. Based on Harrison's independent-particle point of view, the relationship between the tunnel current and bias voltage has been derived. The calculation given is distinguished from those made by others by taking into account the illumination and degenerate effect as the emitter area of solar cells is heavily doped. With the empirical values of the current density of the solar cells under AM1.5 and AMO condition, the critical thickness of the oxidized layer between the metal grid and the semiconductor was obtained. It has been found that, if the critical thickness is exceeded, the performance of the solar cells will be seriously deteriorated. Calculating results are found in good agreement with the experimental ones. |
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| Keywords: | Solar cells Volt-ampere characteristic Tunneling Majority Carrier |
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