| 压力传感器的硅玻静电键合 |
| |
| 引用本文： | 张子鹤,刘振华,陈勇,卢云.压力传感器的硅玻静电键合[J].世界科技研究与发展,2011,33(2):268-270. |
| |
| 作者姓名： | 张子鹤 刘振华 陈勇 卢云 |
| |
| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054 |
| |
| 摘 要： | 针对MEMS压力传感器封装关键技术，从结构仿真和工艺参数等方面研究了一款压力传感器的硅玻静电键合问题，旨在减小封接对压力传感器芯片输出性能的影响。设计并制作键合装置，进而完成实验，最终优化键合温度，电压等参数值，验证最佳温度350~C，理想电压范围500～900V。
|
| 关 键 词： | 压力传感器 静电键合 实验参数 |
Electrostatic Bonding of Silicon and Glass of Pressure Sensor |
| |
| ZHANG Zihe,LIU Zhenhua,CHEN Yong,LU Yun.Electrostatic Bonding of Silicon and Glass of Pressure Sensor[J].World Sci-tech R & D,2011,33(2):268-270. |
| |
| Authors: | ZHANG Zihe LIU Zhenhua CHEN Yong LU Yun |
| |
| Institution: | (School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology Of China, Chengdu 610054 ) |
| |
| Abstract: | In order to reduce the bad performance of pressure sensor chip＇s output which is causing by package, the electrostatic bonding technology of silicon and glass that include structural simulation and parameters are studied. Bonding instrument is designed and produced. The optimum parameters of temperature and voltage are found out. It is found that a temperatures of 350℃ and voltages in the range 500 - 900 V are the best choice. |
| |
| Keywords: | pressure sensor electrostatic bonding experimental parameters |
| 本文献已被 维普 万方数据 等数据库收录！ |
