|
|||||
|
|
| 基于Monte Carlo方法的n+n-n+-GaAs二极管模拟 | |
| 引用本文： | 徐科军. 基于Monte Carlo方法的n+n-n+-GaAs二极管模拟[J]. 贵州大学学报(自然科学版), 2006, 23(4): 375-379 |
| 作者姓名： | 徐科军 |
| 作者单位： | 贵州大学,计算机科学与工程学院,贵州,贵阳,550025 |
| 摘 要： | 用Monte Carlo方法模拟了n n-n -GaAs二极管中载流子的输运。考虑了在输运过程中的主要散射机制,包括极性光学声子散射、声学声子散射、谷间散射以及杂质散射,给出了模拟程序的流程图,自由飞行时间,散射机制的选择和电子波矢量,最后得出平均电子速率和平均电子能量. |
| 关 键 词： | Monte Carlo方法 散射 电子输运 |
| 文章编号： | 1000-5269(2006)04-0375-05 |
| 修稿时间： | 2006-09-08 |
The Simulation of n+n-n+-GaAs Diode Based on Monte Carlo Method |
|
| XU Ke-jun. The Simulation of n+n-n+-GaAs Diode Based on Monte Carlo Method[J]. Journal of Guizhou University(Natural Science), 2006, 23(4): 375-379 | |
| Authors: | XU Ke-jun |
| Abstract: | A Monte Carlo Simulation of carriers transport in n n-n -GaAs diode at electric fields is presented.Scattering mechanisms with polar optical phonons,acoustic phonons,intervalley scattering and impurities are included.Flowchart of simulation program is given and free flight time,selection of scattering mechanism and electron wave vector are explained.At last,determination of mean electron velocity and energy is presented. |
| Keywords: | Monte Carlo Method Scattering Electron transport |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |