| 衬底偏压对磁溅射生长氮化碳薄膜的影响 |
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| 引用本文： | 郑伟涛.衬底偏压对磁溅射生长氮化碳薄膜的影响[J].吉林大学学报(理学版),1996(3). |
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| 作者姓名： | 郑伟涛 |
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| 作者单位： | 吉林大学材料科学系 |
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| 摘 要： | 采用非平衡磁溅射方法，在不同衬底偏压条件下，在Ｓｉ（００１）衬底上制备出氮化碳薄膜．实验发现，氮化碳薄膜的沉积率取决于衬底偏压．通过对红外、电子能量损失谱的测试分析发现，衬底偏压对氮化碳薄膜中原子间的键合情况也有一定的影响．
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| 关 键 词： | 氮化碳，薄膜，红外光谱，电子能量损失谱，偏压 |
Effect of Substrate Bias on Carbon Nitride Films Grown by Reactive Magnetron Sputtering |
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| Zheng Weitao.Effect of Substrate Bias on Carbon Nitride Films Grown by Reactive Magnetron Sputtering[J].Journal of Jilin University: Sci Ed,1996(3). |
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| Authors: | Zheng Weitao |
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| Abstract: | Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different substrate bias. It was found that the deposition rate is dependent on the substrate bias.From FTIR and EELS analyses, it was also found that substrate bias has an effect on chemical binding among atoms in carbon nitride films. |
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| Keywords: | carbon nitride thin film FTIR EELS bias |
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