PLZT铁电薄膜的制备及其性能

在温度为97℃，水浴回流10h的条件下，用旋涂法在Si（100）基底上，通过改变溶胶的滴加量、转速、升温速率、煅烧温度及保温时间，制备出性能良好的PLZT铁电薄膜，并用精密阻抗分析仪（PIA）对其介电性能进行测试，研究发现：PLZT铁电薄膜未被击穿时，随着测试频率厂的提高电容逐渐减小，而介电损耗会出现突变，在测试频率达到1MHz时，介电损耗一次突变；当PLZT铁电薄膜被击穿时，随着测试频率厂的升高，介电损耗会逐渐增大，在外场频率达到1MHz时开始减小，当膜被击穿后，电感将不可恢复，而材料的电容具有恢复特征，随着测试频率的升高，电容在逐渐减小．

Preparation and properties of PLZT ferroelectric thin films

The steady sol of PLZT was prepared through the method of waterbath-backflow for 10 hours at 97 ℃. Then throuth adjusting the quanta of sol, the rotating speed, the heating rate, the calcination temperature and the soaking time, the PLZT ferroelectric thin films with good quality were prepared by spin-coating on clean Si（100） substrates, and the dielectric properties of the thin films were studied by precision impedance analyze （PIA）. The results showed when the PLZT ferroelectric film was not staved in, with the increase of the testing frequency f, its Capacitance （C） gradually decreased, while its Dielectric Loss- factor （D） would mutate and when f reached 1 MHz D had one mutaion. When the PLZT ferroelectric film was staved in, with the increase of f, D gradually increased and it was not until f reached 1 MHz D decreased. When the film was staved in, C would restore but its Inductance （L） would not restore, and with the increase of f, C gradually deceased.