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| 单晶硅氧化动力学及氧化膜结构分析 | |
| 引用本文： | 樊自拴,凌燕平,李文超. 单晶硅氧化动力学及氧化膜结构分析[J]. 北京科技大学学报, 1987, 0(3) |
| 作者姓名： | 樊自拴 凌燕平 李文超 |
| 作者单位： | 北京钢铁学院冶金物化教研室(樊自拴，凌燕平)，北京钢铁学院冶金物化教研室(李文超) |
| 摘 要： | 用气固相反应原理分析了单晶硅热氧化机理。在氧化中期,考虑到热应力对扩散系数的影响,从而得出了硅氧化的一个新模型,即化学反应控速——四次方混合控速——扩散控速模型。用该模型处理了文献[4]中的数据与本实验结果均得到满意的相关系数。另外,用扫描电镜和透射电镜对氧化膜进行了观察,分析了单晶硅的氧化膜生长机理。 |
| 关 键 词： | 硅 氧化动力学 结构分析 |
Oxidation Kinetics of Silicon-monocrystal and Microstructufe of Oxide Film |
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| Fan Zishuan Ling Yanping Li Wenchao. Oxidation Kinetics of Silicon-monocrystal and Microstructufe of Oxide Film[J]. Journal of University of Science and Technology Beijing, 1987, 0(3) | |
| Authors: | Fan Zishuan Ling Yanping Li Wenchao |
| Affiliation: | Fan Zishuan Ling Yanping Li Wenchao |
| Abstract: | Oxidation kinetics of siliconmonocrystal have been studied. The three steps rule of gas-solid reaction have been raised. The reaction rate of oxidation is divided into three stages: in the initial period the reaction rate is controlled by interface chemical reaction; in the second stage by both interface chemical reaction and slow diffusion due to stress; in the third stage by diffusion.And the microstructure of oxide film have been observed by SEM and TEM. |
| Keywords: | silicon oxidation kinetics structural analysis |
| 本文献已被 CNKI 等数据库收录！ | |