| SnO2／Si特性的研究 |
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| 引用本文： | 吴瑞忠,吴孙桃.SnO2／Si特性的研究[J].厦门大学学报(自然科学版),1997,36(3):364-368. |
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| 作者姓名： | 吴瑞忠 吴孙桃 |
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| 作者单位： | 厦门大学物理学系 |
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| 摘 要： | 在不同温度下，由ＣＶＤ法，在（１１１）和（１００）单晶硅上淀积ＳｎＯ２，测量了它们的光电压谱和相应的气敏特性，推导了光电压的计算公式，并由此计算出其重要的参数
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| 关 键 词： | SnO2薄膜，光电压谱，材料特性 |
Study of Characteristics of SnO 2/Si |
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| Wu Ruizhong Wu Suntao,Zhou HaiWen Shen Qihua.Study of Characteristics of SnO 2/Si[J].Journal of Xiamen University(Natural Science),1997,36(3):364-368. |
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| Authors: | Wu Ruizhong Wu Suntao Zhou HaiWen Shen Qihua |
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| Abstract: | SnO 2 films are produced by CVD method on substrate of (111) and (100) oriented N type silicon at different temperatuers. Their photovoltage spectra and gas sensibilities are measured. The calculating expression of photovoltage are derived, by which some important parameters of SnO 2/Si are calculated . |
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| Keywords: | SnO 2 film Photovoltage spectra Characteristics of material |
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