γ射线对Ge-As-Se硫系玻璃的辐照效应

对Ge-As-Se玻璃系统,进行了高能γ射线辐照试验。结果表明:辐照使样品的密度(ρ),热膨胀系数(α)和光学带隙(Eopt)等参数产生了变化,并与组成有关。样品的组成为化学计量比时,其辐照灵敏度与As2Se3含量具有线性规律,而非化学计量比组成的样品无明显规律性关系。这是γ射线引起玻璃化学键和结构变化而产生的效应。硒化物硫系玻璃在作为剂量计材料应用方面具有良好的前景。     

Ge-As-Se-Te系统玻璃的结构

应用红外反射光谱、激光拉曼光谱和C-射线■射分析。对■Se-Te系统硫系玻璃的结构进行了研究。结果表明:该系统玻璃的基本■元为[GeX_(4/2)]和[AsX__(3/2)](X=Se、Te,下同);还可能存在X■As_2X_(4/2)、GeX_(2/2)和GeTe结构单元,它们的相对含量取决于玻璃中各部分(?)加入量。据此提出了该系统中几种玻璃的结构模型。此外,还对玻璃经热处理后的稳定性作了探讨,发现Te取代Se后,玻璃的稳定性下降。易于析晶、■出的晶体有GeTe、Te和As_2Te_3。     

High-energy ion treatments of amorphous As40Se60 thin films for optical applic ations

The treatment of 100 MeV Ag swift-heavy ion(SHI) irradiation with five different fluences(3 1010, 1 1011, 3 1011, 1 1012, and3 1012ions/cm2) was used to design optical and structural properties of amorphous(a-) As40Se60 chalcogenide thin films. Swanepoel method was applied on transmission measurements to determine the changes in optical bandgap, Tauc parameter and linear optical parameters, i.e., linear optical absorption, extinction coefficient and linear refractive index. Dispersion of the material was determined by Wemple–DiDomenico relation.Changes in nonlinear optical parameters of third-order optical susceptibility and nonlinear refractive index were determined using semi-empirical relations. Changes in surface morphology of the films were investigated using SEM observation, which indicated that fluence 3 1012ions/cm2was upper threshold limit for these films for ion treatment. It is observed that optical bandgap reduces from 1.76 eV to 1.64 eV, and nonlinear refractive index increases from 1.31 10 10[esu] to 1.74 10 10[esu]. Linear refractive index initially increases from 2.80 to 3.52(for fluence3 1010ions/cm2) and then keeps decreasing. The observed changes in optical properties upon irradiation were explained in terms of structural rearrangements by Raman measurement. The study was compiled with the previous literature to propose SHI as an effective optical engineering technique to achieve desired changes according to the need of optical/photonic applications.     

双包层As2Se3硫化物光子晶体光纤受激布里渊散射慢光

研究了双包层As₂Se₃硫化物光子晶体光纤内、外包层结构对受激布里渊散射慢光特性的影响.在分析双包层As₂Se₃硫化物光子晶体光纤结构对布里渊增益谱的影响时,考虑了声场的高阶模式.研究结果表明,内包层占空比的变化对慢光特性影响较大,随内包层占空比的增加,布里渊增益谱的主峰逐渐降低,第二个峰值逐渐上升,时间延迟量增加,布里渊增益的变化趋势与其相似.但这些特性受外包层占空比的变化影响较小,布里渊增益谱的第二个峰值略微上升,而时间延迟及增益变化很小.因此双包层As₂Se₃硫化物光子晶体光纤的慢光特性受内包层占空比影响较大.而与内包层相比,这些特性受外包层占空比的影响较小.     

First-principles simulation and experimental evidence for improvement of transmittance in ZnO films

Optical reflection and transmission spectra of Se_(80-x)Te_(20)Ag_x(where x=0,5,10 and 15,molar percent) chalcogenide thin films have been obtained in the range 300-1 200 nm at room temperature.Glassy samples are prepared by melt quenching technique and thin films are obtained by using vacuum evaporation technique on glass transition at room temperature.The present paper reports the effect of Ag contents on various optical parameters such as optical band gap,refractive index,extinction coefficient,absorp...     

HgI_2-Ag_2S-As_2S_3硫系玻璃离子选择电极

研究了适合作为离子选择电极的HgI_2-Ag_2S-As_2S_3和HgS-Ag_2S-As_2S_3系统的玻璃形成区。通过对这些玻璃性质与结构分析,发现xHgI_2·(100-x)(0.5Ag_2S·0.5As_2S_3]系列玻璃是很好的传感膜材料。采用该系列玻璃制成了对Ag~+离子10~(-6)～10~(-1)mol/L浓度范围具有能斯特响应斜率60mV/mol·L~(-1)和对Hg~(2+)离子10~(-6)～10~(-1)mol/L浓度具有能斯特斜率30mV/mol·L~(-1)的电极。这些电极具有优良的电化学性能。结合非晶态固体电解质的离子迁移模型,提出了这类硫系玻璃屯极的响应机理。     

硫属铜基诊疗试剂的研究进展

基于近红外光热治疗的诊疗一体化技术是一种新兴的具有广阔应用前景的癌症治疗方法.它可以通过对肿瘤的可视化检测分析,进而实施个体差异化治疗.硫属铜基纳米材料具有强近红外吸收、高光热转换效率、廉价以及制备方法简单等诸多优点,因此基于该类材料的癌症诊疗一体化成为了近些年的研究热点.介绍了近年来硫属铜基纳米材料在癌症诊断、治疗以及一体化上的最新研究进展.     

Photo-induced optical changes in GexAs40Se60-x thin films

Ge-As-Se chalcogenide thin films show a wide range of photosensitivity, which is utilized for the fabrication of micro-optical elements for integrated optics. The photosensitivity of GexAs40Se60?x(x=0,15) chalcogenide thin films for UV light was presented. For that purpose, the bulk samples of GexAs40Se60?x(x=0,15) chalcogenide glasses were prepared using conventional melt quenching technique, and thin films were prepared using thermal evaporation technique. These thin films were exposed to UV light for two hours. Amorphous natures of bulk samples and thin films were verified by XRD and chemical compositions were verified by EDX measurements. The thicknesses of the thin films were measured using a thickness profilometer. Linear optical analysis of these thin films was done using transmission spectra in wavelength range of 300?900 nm. Optical bandgap was determined by first peak of transmission derivative as well as extrapol ation of Tauc’s plot. R2 analysis was done using R software to ensure that the material is indirect bandgap material. It is observed that two hours UV exposure causes photo-darkening along with photo-expansion in As40Se60 thin films, while photo-bleach ing and photo-densification for Ge15As40Se45 thin films. However, the amounts of photo-induced optical changes for Ge15As40Se45 thin films are smaller than those for As40Se60 thin films. The changes in optical absorption, bandgap and thickness are understood base d on the bonding rearrangement caused by UV exposure.     

一个新的K／Pd／Se体系中四金属硒化物的合成与结构表征

采用水热法合成一个新的K/Pd/Se四金属硒化物.KPd12So20(Ⅰ)通过K2PdCt4,K2Se2以及六次甲基四胺(HMT)在110℃以1:4:2摩尔比水热反应制得.黑色晶体(Ⅰ)不溶于水和多数有机溶剂.化合物属正交空间群Pbca,晶胞参数α=10.840(1)A,b=25.735(2)A,c=30.554(2)A,V=8523.4(9)A3,Z=8.K4pd12Se20有一个新型簇状阴离子[Pd12Se8(Se2)6]4-和四个抗衡K+阳离子组成.[Pd12(Se2)6]4--阴离子簇是第一个结构全新的多核Pd多硒化物簇.所有12个Pd(Ⅱ)金属离子都是平面几何构型由八个(Se2-)和6个(Se2-)离子配体连接形成大球形[Pld12Se8(Se2)6] 4-阴离子簇.值得注意的是,4个K+中的一个是位于[Pd12Se8(Se2)6]4-离子簇中间的空穴位置的.     

Linear and nonlinear optical changes in amorphous As2Se3 thin film upon UV exposure

Amorphous As_2Se_3 chalcogenide thin film was exposed to UV light(i line and g line) using mercury lamp for 30 min. XRD,UV/VIS spectroscopy and thickness measurements were taken for unexposed and exposed thin film for structural and optical characterizations.Linear optical constants(linear refractive index,extinction coefficient and linear optical absorption coefficient) of the film were calculated from transmission spectra using Swanepoel method.Optical bandgap was determined using Tauc's relation of in...