Far-infrared Absorption Spectra and Properties of SnO2 Nanorods

Nanostructured materials have drawn considerable attention because they are promising candidates for nextgeneration electronic and photonic devices with low power consumption[1-5]. A number of methods, such as laser ablation[6], template-induced growth[7], arc discharge [8], vapor transport [9], and molecular-beam epitaxy[10] have been developed to synthesize Si, Ge, MgO,SnO2, GaN, and Ga2O3 nanowires or nanorods[11-15].     

纳米SnO2材料的低温电阻特性

本文研究了纳米SnO2材料在低温下（15－290K）的电阻特性，以及颗粒度对样品电阻特性变化的影响，并给出了材料的导电机理。     

氧化钾,氧化锡对Na2O—CaO—SiO2系玻璃耐水性的影响

以实验结果为依据，研究了氧化钾、氧化锡对Ｎａ＿２Ｏ—ＣａＯ—ＳｉＯ＿２采玻璃耐水性的影响。     

新型类维A酸锡酯的合成、结构表征及其体外抗癌活性

用二正丁基氧化锡和类维生素A酸以摩尔比1∶2和1∶1反应,合成了两个系列的新型类维生素A酸二正丁基锡酯化合物3a~3d和4a~4d,并利用(1H,13C,119Sn)NMR和IR表征了这些化合物的结构,确定了化合物3a~3d是通过单齿配位形式与锡原子结合而成的五配位三角双锥型的配合物化合物,而化合物4a~4d的结构中存在着一个锡氧四元环,分子中的酯基为二齿配体,锡原子都是六配位扭曲八面体构型.生物活性测试表明:该类化合物对宫颈癌细胞(Hela)、肝癌细胞(LCC)、肺癌细胞(A549)等癌细胞都具有较好的抗癌活性.     

Tin Oxide and Carbon Composite （Sn6O4（OH）4/AG） as the Anode in a Lithium Ion Battery

A tin oxide and carbon composite （Sn6O4（OH）4/AG） with a Sn content of 0.15-0.30 was prepared by chemical deposition at normal pressures and temperatures. The structures of the artificial graphite （AG）, the Sn6O4（OH）4, and the Sn6O4（OH）4JAG were analyzed using X-ray diffraction. The electrochemical lithiation was investigated by measuring the galvanostatic charge and discharge ratio. The electrochemical capacities of the three materials during the first discharge were 310 mAh/g （AG）, 616 mAh/g （Sn6O4（OH）4/AG）, and 1090 mAh/g （Sn6O4（oa）4）. The discharge capacity of the Sn6O4（OH）4/AG was larger than the simple sum of the capacities provided by AG and Sn6O4（OH）4 with the same content. The cyclic performance of Sn6O4（OH）4/AG was also better than that of Sn6O4（OH）4 for voltages of 0 to 3 V. The results imply that the interaction between Sn and C in Sn6O4（OH）4/AG is very strong and effectively inhibits the volume expansion of the Sn.     

SnO2薄膜元件的制备及其气敏特性研究

采用溶胶一凝胶法,以氯化锡（ＳｎＣｌ２。）和无水乙醇为反应起始物,经过加热回流、热处理等工艺．制备出了掺硅和锑的氧化锡（ＳｎＯ２）气敏薄膜,并制成了气敏元件．元件性能测试表明．材料对Ｈ２具有较高的灵敏度和选择性、较好的响应一恢复特性和稳定性．     

添加剂对SnO2气敏特性的影响

氧化锡气敏材料的电导率以及对气体的选择性由氧空位的形成和氧化过程共同完成,氧空位浓度越大,气敏效应越明显。根据氧化锡的这一气敏机理,本文研究了添加剂Ｓｂ２Ｏ３和Ｐｄｃｌ２对氧化锡气敏材料电导率及选择性的影响,分析了其对氧化锡气敏特性的作用机理。