Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutro transmutation doping

Nanocrystalline74Ge embedded SiO2 films were prepared by employing ion implantation and neutron transmutation doping methods.Transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence of the obtained samples were measured. The existence of As dopants transmuted from74 Ge is significant to guarantee the uniformity and higher volume density of Ge nanocrystals by tuning the system’s crystallinity and activating mass transfer process. It was observed that the photoluminescence intensity of Ge nanocrystals increased first then decreased with the increase of arsenic concentration. The optimized fluence of neutron transmutation doping was found to be5.5 1017 cm 2to achieve maximum photoluminescence emission in Ge embedded SiO2 film. This work opens a route in the three-dimensional nanofabrication of uniform Ge nanocrystals.