ZnO:Al(ZAO)薄膜的特性研究

用直流磁控反应溅射技术制备了综合性能优良的ZnO:Al(ZAO)薄膜.X光衍射(XRD)、光电子能谱(XPS)和Auger电子能谱(AES)等分析结果表明,适量的铝掺杂和氧流量可有效地控制Al2O3相的生成.铝在薄膜表面的存在形式单一,并且Zn,O,Al各元素纵向分布均匀.理论与实验研究表明,对于高度简并的ZAO半导体薄膜,在温度较低时,离化杂质散射占主导地位;温度较高时,晶格振动散射将成为主要的散射机制;晶界散射仅当晶粒尺寸较小(与电子的平均自由程相当)时才起作用.此外,优化工艺参数可获得低电阻率(～5×10-4Ωcm)的ZAO薄膜.在可见光区,其透射率＞80%;在近中红外光区,其反射率＞60%.     

Study on ZnO:Al (ZAO) films by DC reaction magnetron sputtering

The high quality ZnO: A1 films were successfully produced by DC reaction magnetron sputtering technology. The Al-doping effect on electrical and optical properties and its scattering mechanism are discussed in detail. The analyses of X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS) and high resolution Auger electron spectroscopy (AES) show that Al2O3 could be effectively removed by controlling oxygen flow and Al-doping concentration during deposition of ZnO: Al films. Zn, Al and oxygen elements are well distributed through the films. For highly degenerated ZnO:A1 semi-conductive thin films, the theoretical and experimental results reveal that the ionized impurity. scattering dominates the Hall mobility in the films in the low-temperature range, while the lattice vibration scattering becomes a major scattering mechanism in the high-temperature range. The grain boundary scattering only plays a major role in the ZAO films with small grain size (as compared to the electron mean free path). The photoelectric properties of ZAO films show that it has low resistivity ( ～ 5 × 10-4 Ωcm), and the transmittance in visible range and the reflectance in IR region are above 80% and 60%, respectively.     

ArF准分子激光晶化非晶硅薄膜微结构研究

利用ArF准分子激光对非晶硅薄膜的表层进行晶化后,采用拉曼光谱(Raman)、透射电镜(TEM)、场发射扫描电子显微镜(FE-SEM)等实验方法研究不同激光能量密度下晶化层硅薄膜微结构变化。实验结果表明:随激光能量密度的增大,薄膜结晶度增大,晶化层厚度加厚;晶粒尺寸则是先增大,直到激光能量密度增大到210 mJ/cm~2后,晶粒尺寸开始减小并且均匀性逐渐变差。最佳的激光能量密度范围为120～180 mJ/cm~2,这时薄膜表面晶化层晶粒比较均匀致密,薄膜质量较好。