P型透明导电氧化物CuAlO_2的研究进展

CuAlO2作为一种天然的P型透明导电氧化物(TCO)成为近年来P型TCO的研究热点.介绍了CuAlO2近几年最新的研究进展,简述了不同的制备方法及其优缺点,综述了对其光电、热电等性能的研究状况,对CuAlO2掺杂前后性能改变的研究进展做了详细介绍,并提出了CuAlO2未来的研究方向.  

Pulsed laser deposited Al-doped ZnO thin films for optical applications

Highly transparent and conducting Al-doped ZnO (Al:ZnO) thin films were grown on glass substrates using pulsed laser deposition technique. The profound effect of film thickness on the structural, optical and electrical properties of Al:ZnO thin films was observed. The X-ray diffraction depicts c-axis, plane (002) oriented thin films with hexagonal wurtzite crystal structure. Al-doping in ZnO introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:ZnO thin films are important for applications such as transparent electromagnetic interference (EMI) shielding materials and solar cells. The obtained optical band gap (3.2–3.08 eV) was found to be less than pure ZnO (3.37 eV) films. The lowering in the band gap in Al:ZnO thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:ZnO thin films for light emitting devices (LEDs) applications. The current–voltage (I–V) measurements show the ohmic behavior of the films with resistivity (ρ)~10?3 Ω cm.  

IWO缓冲层对MOCVD-ZnO:B薄膜性能的影响研究

金属有机化学气相沉积(MOCVD)技术生长的绒面ZnO透明导电(ZnO-TCO)薄膜应用于Si基薄膜太阳电池上能够形成"陷光结构",以提高薄膜太阳电池效率和稳定性。本文将电子束反应蒸发技术生长的掺W的In2O3(In2O3:W,(IWO)薄膜作为缓冲层,应用于MOCVD-ZnO:B薄膜与玻璃之间,可促进ZnO:B薄膜的生长,并且有效提升薄膜的光散射特性。当IWO缓冲层厚度为20nm时,获得的IWO/ZnO:B薄膜的电阻率为2.07×10-3Ω.cm,迁移率为20.9cm2.V-1.s-1,载流子浓度为1.44×1020 cm-3;同时,薄膜具有的透过率大于85%,且在550nm处绒度较ZnO:B薄膜提高了约9.5%,在800nm处绒度较ZnO:B薄膜提高了约4.5%。  

P型透明导电氧化物CuAlO2的研究进展

CuAlO₂作为一种天然的P型透明导电氧化物(TCO)成为近年来P型TCO的研究热点. 介绍了CuAlO₂近几年最新的研究进展, 简述了不同的制备方法及其优缺点, 综述了对其光电、热电等性能的研究状况, 对CuAlO₂掺杂前后性能改变的研究进展做了详细介绍, 并提出了CuAlO₂未来的研究方向.  

双掺杂透明导电氧化物纳米线的制备与发光性能

文章以金属镓(Ga)、铟(In)和氧化亚锡(SnO)粉末作为前驱反应物,通过简单的热蒸方法成功制备出双掺杂的氧化物ISGO(掺杂了In、Sn的Ga2O3)纳米线。样品的形貌、结构与成分的测定分别在场发射扫描电镜、X射线衍射谱仪、选区电子衍射、高分辨透射电镜以及X射线能量散射谱仪上进行,结果表明已合成的纳米线为掺杂In和Sn具有单斜晶结构的-βGa2O3;还提出了用自催化气-液-固(VLS)生长机制来解释双掺杂氧化物ISGO纳米线的生长;提出了由于Sn和In成分的双掺杂,使得其发光峰的峰位明显红移、半高宽变宽。