Analyses of plasma reactive sputter deposition of CNx films by OES

Conclusion Adding Ar to the sputtering gas N₂ had influence upon the species distribution in the gas phase. Our experimental results suggest that the N-to-C ratio is not sensitive to the local binding states of elements in the CN_x films. In order to increase the percentage of one of desired bonding structures in the film it is relatively limited by means of optimizing the discharge parameters such as the voltage of graphite target and flow ratio of sputtering gases. Other methods such as physical and/or chemical treatments of deposition surface may be effective. As reported work shows, increasing temperature of substrate is useful to decomposition of parayanogen structure^[2] or impact of ions on deposition surface to formsp ³ bond structurer^[1]. It is believed that finding new methods of deposition surface treatments is worth further considering if we hope to deposit and increase one of desired percentage ofbond structure in the films.