ITO膜方块电阻测试条件的探讨

本文根据半导体材料薄层方块电阻的测试原理，探讨并提出了ITO膜方块电阻的测试条件。     

ITO表面处理对有机电致发光器件光电特性的影响

分别采用超声波清洗、O2 Plasma、UV-ozone方法对ITO的表面进行处理,用原子力显微镜(AFM)观测了处理后ITO的表面形貌,并用经上述方法处理的ITO制作了结构为ITO/NPB/Alq3/Al的电致发光器件,比较了这些方法对器件性能的影响.结果表明,这些方法可以改变ITO的表面化学成分及结构,大幅度地提高器件的亮度、寿命和稳定性,尤其是氧离子轰击最为有效.     

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400 ℃ ）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T are amorphous at the temperature ranging from 1, the crystalline seeds appear at T1 = 300℃, and the films 27 ℃ to 400 ℃.