SiC/M-Al金属间化合物界面固相反应研究进展

SiC/M(M=Ti,Ni,Fe)-Al金属间化合物界面固相反应的研究是材料科学领域内一个重要的理论研究课题。SiC/M-Al界面固相反应及界面状态决定着SiC/M-Al固相扩散焊接件及SiC/M-Al基复合材料的力学性能和使用性能。文章就近年来SiC/M-Al界面固相反应的研究成果进行综述,包括反应热力学与相平衡分析,反应层的组成与结构以及反应动力学与反应微观机制;并就目前研究的不足以及如何改进提出了一些看法。     

Al_2O_3/SiC纳米陶瓷复合材料的制备及力学性能

采用一次粒径分别为10nm和15nm的αAl2O3和SiC粉体为原料,制备了Al2O3/SiC纳米陶瓷复合材料·纳米SiC颗粒明显抑制Al2O3基体晶粒的长大,SiC体积分数超过4%时,材料的断裂方式由沿晶断裂变为穿晶断裂·随SiC含量的增加,Al2O3/SiC纳米复合材料的硬度增大·材料的弯曲强度和断裂韧性在SiC体积分数为5%时达到最大值·最大三点弯曲强度和断裂韧性分别为641MPa和47MPam1/2,明显高于热压单相Al2O3陶瓷(344MPa和31MPam1/2)·复合材料的强化主要来源于内晶颗粒残余应力强化和晶粒细化...     

Theoretical calculations on the atomic and electronic structure of β-SiC(110) surface

We present a theoretical calculation of the atomic and electronic structure of β-SiC and its non-polar (110) surface using the full potential linear augmented plane wave (FPLAPW) approach. The calculated lattice constant and bulk modulus of β-SiC crystal are in excellent agreement with experimental data. The atomic and electronic structure of β-SiC(110) surface has been calculated by employing the slab and supercell model. It is found that the surface is characterized by a top-layer bond-length-contracting rotation relaxation in which the Si-surface atom moves closer towards the substrate while the C-surface atom moves outward. This relaxation is analogous to that of Ⅲ-Ⅴ semiconductor surface. The driving mechanism for this atomic rearrangement is that the Si atom tends to a planar sp²-like bonding situation with its three N neighbors and the N atom tends to a p³-like bonding with its three Si neighbors. Furthermore, surface relaxation induces the change from metallic to semiconducting characterization.     

SiC冶炼炉温度场的有限元分析及其ANSYS模拟研究

采用有限元分析方法对Acheson炉内温度场进行研究 ,进而采用ANSYS数值模拟软件对冶炼炉内温度分布进行模拟 ,得到了冶炼炉内温度分布的模拟图 ,分析了炉内的温度分布规律及其对SiC的生成和产率的影响 ,并提出了扩大SiC生成温度区域的措施     

Si_3N_4结合的SiC耐火材料的表面氧化处理

对 Si_3N_4 结合的 SiC 耐火材料进行了表面氧化技术的探索。研究表明:Si_3N_4 的氧化趋势大于 SiC;适当地表面氧化处理,能使材料强度得到提高,但氧化时间过长,可能引起材料表面损伤;在一定条件下,材料气孔率愈大,强度提高愈显著;给出了该材料合理的配方和进行表面氧化处理应注意的问题。     

热历史对Sialon／SiC_（p）复合陶瓷的相稳定性及力学性能的影响

研究热处理对致密Ｌｎ－Ｓｉａｌｏｎ／ＳｉＣ（ｐ）复合陶瓷中α相稳定性的影响及由此引起的显微结构调控和力学性能变化，其中Ｌｎ＝Ｎｄ和Ｙｂ．Ｎｄ－Ｓｉａｌｏｎ／ＳｉＣ（ｐ）中，α相热稳定性差，几乎全部相变为β相，而大量长柱状β晶粒的存在并未明显改善材料的断裂韧性（ＫＩＣ），原因在于长时间热处理导致晶粒相互聚集粗化．相对而言，Ｙｂ２Ｏ３可有效稳定α相，因此Ｙｂ－Ｓｉａｌｏｎ／ＳｉＣ（ｐ）中含有许多等轴状α晶粒，高硬度是此种材料力学性能的显著特征．     

双环缝喷射共沉积SiC颗粒的捕获与分布研究

采用坩埚移动式喷射共沉积装置及其双环缝复合雾化器制备了SiC颗粒增强铝基复合材料坯件,研究了过程中增强颗粒的捕获机制及特点.实验结果表明,双环缝复合雾化器所引入的SiC颗粒捕获率较高,分布均匀;增强颗粒主要在雾化初时阶段被雾化液滴所捕获,而沉积坯表面因基本呈固相且温度较低,对SiC颗粒的直接捕获效果不明显;沉积坯快冷凝固界面前沿捕获对SiC颗粒的分布影响不大,SiC颗粒在沉积坯中的最终分布主要取决于由雾化液滴对增强颗粒的捕获,特别决定于SiC颗粒在单个雾化颗粒内部及空间雾化颗粒群中的分布.     

Au/n-ZnO/p-SiC紫外探测器的研制和特性分析

采用宽禁带半导体n-ZnO和金属Au作肖特基接触,n-ZnO和同为宽禁带半导体p-SiC形成异质结,Ti,Ni,Ag合金作背底形成欧姆接触,研制出Au/n-ZnO/p-SiC结构的紫外探测器.测试分析了该器件的光谱响应特性,响应范围为200～400nm,在室温和一定反偏压下,响应峰值为313nm,半宽为65nm.同时测试分析了该器件的I-V特性,室温下,反向工作电压大于5V,反向击穿电压为70V.实验表明,此结构紫外探测器具有良好的紫外响应特性以及较低的反向漏电流和结电容.     

Fabrication and superconducting properties of nano-SiC doped MgB2 tapes

Nano-SiC doped MgB2 tapes were prepared by the in situ powder-in-tube method. Heat treatment was performed at 650℃ for 1 h. XRD data indicate that SiC particles had reacted with the MgB2 during sintering process. MgB2 core seemed to be denser after SiC doping, and the critical temperature was slightly depressed. The critical current density Jc of the SiC doped tapes was significantly enhanced in magnetic fields up to 14 T compared to the undoped ones. For the 5% SiC doped samples, Jc was in- creased by a factor of 32 at 4.2 K, 10 T. The enhancement of Jc-B properties in SiC doped MgB2 tapes is considered to be due to the enhancement of grain linkages and the introduction of effective flux pining centers. The substitution of B by C in MgB2 grains is thought to be the main reason for the improve- ment of the flux pinning ability in SiC doped MgB2 tapes.     

多节状SiC晶须的合成及在矿冶工程材料中的应用

运用TEM、XRD等分析检测技术对SiCw的形貌结构、长度与直径分布及其应用于复合材料中的特性进行了检测。研究表明：SiCw产品以直晶为主，表面呈多节状，以-SiC为主要晶型，直径为0.2～1.5m,长度为30～200m。此外，作者对SiCw在矿冶工程材料中的应用进行了展望。