Na变质对Zn—27Al—Si合金组织性能的影响

通过试验和分析，发现Na对Zn-Al-Si合金中硅晶体的变质机理是Na吸附在硅晶体的生长方式，改变了硅晶产生大量分枝，而不影响硅的形核，试验结果还表明硅相由板块状变为球状后，合金的机械性能有显著提高。     

On the characterization of microstructure and fracture in a high-pressure die-casting Al-10 wt%Si alloy

Microstructure and fracture behavior in a high-pressure die-casting Al-10 wt%Si alloy have been investigated using optical microscope(OM),scanning electron microscope(SEM) and a high-resolution laboratory computed tomography(CT).The results showed that a typical heterogeneous microstructure of the alloy comprised α-Al rich region,eutectic silicon band region and porosity.The microstructure patterns highly dependent on fluid convection and rapid solidification.Under high filling speed,externally solidified crystals(ESCs) and the growing dendrites migrated in center and formed α-Al rich region.Si particles was discharged and enriched in the final solidified liquid,forming eutectic silicon band.Hard Si particles and brittle Fe-rich phases served as obstacles prevented dislocation migration,causing local stress concentration.Due to large movable slip systems in α-Al rich region,the propagation path of the crack was greatly extended.Net-shrinkage that induced by dense impinging dendrites led to the microcracks along the boundary of dendrites which promoted intergranular fracture.     

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques

High quality strain-relaxed thin SiGe virtual substrates have been achieved by combining the misfit strain technique and the point defect technique.The point defects were first injected into the coherently strained SiGe layer through the "inserted Si layer" by argon ion implantation.After thermal annealing,an intermediate SiGe layer was grown with a strained Si cap layer.The inserted Si layer in the SiGe film serves as the source of the misfit strain and prevents the threading dislocations from propagating into the next epitaxial layer.A strained-Si/SiGe/inserted-Si/SiGe heterostructure was achieved with a threading dislocation density of 1×104cm-2 and a root mean square surface roughness of 0.87 nm.This combined method can effectively fabricate device-quality SiGe virtual substrates with a low threading dislocation density and a smooth surface.     

工艺参数对60Si2MnA钢高速线材相变规律的影响

通过热模拟机Gleeble-1500对终轧温度和控制冷却过程的模拟，研究了60Si2MnA钢高速线材生产的有关工艺参数，分析了终轧温度、吐丝温度及相变区冷却速度对相变温度的影响，得出其影响规律性的结论，并测定了该钢种动态连续冷却转变（CCT）曲线。     

Fe-Mn-Si基合金中ε马氏体逆相变的内耗

利用音频内耗仪测试了Ｆｅ－Ｍｎ－Ｓｉ基形状记忆合金热诱发马氏体、一般应力诱发马氏体和热－机械训练后的应力诱发马氏体的逆相变过程．结果表明，热诱发马氏体的逆相变在４００～５００Ｋ完成；经训练后的应力诱发马氏体逆相变开始温度与热诱发马氏体逆相变开始温度相近，但高于一般应力诱发马氏体的逆相变开始温度；一般应力诱发马氏体的逆相变温度低于热马氏体的逆相变温度，随应变量的增加，Ａｓ降低     

浅探《红楼梦》中的司棋形象

小说《红楼梦》中,曹雪芹以其生花妙笔塑造了一个个栩栩如生的人物形象,其中的丫环司棋痴情刚烈但又低俗,为了追求自主的爱情和婚姻,做了封建专制统治祭坛上可悲的祭品。她的命运是悲惨的。     

"其文直,其事核"——《史记》叙事特点研究

重点论述《史记》“其文直,其事核”的实录性叙事特点。论文从西汉末年至近代人们对《史记》实录性叙事特点的认识过程开始介绍,具体分析了《史记》叙事实录性特点的三个具体表现:“考而后信”;实事求是,秉笔直书;简笔交代,不枝不蔓。在此基础上,进一步对《史记》篇章中在真实性上受到人们质疑、人们认为有违于叙事实录性的情节进行了分类,并依类展开解读,指出这些情节都没有违背叙事实录性的原则,叙事的内容和过程都是“文直,事核”的,也体现出叙事的实录性特点。     

Co/Si多层膜的模型结构研究

对小角Ｘ射线衍射法测出的Ｃｏ／Ｓｉ多层膜的平均折射率修正值为负的原因作了进一步的分析，提出了修正的具有化合物层的多层膜结构模型，运用光学多层膜理论计算小角衍射强度时代入了负的折射率修正值δ，得到的理论计算曲线与实验曲线趋于一致．     

论汉晋宫怨文学情感主题的建构

司马相如《长门赋》、班婕妤《怨歌行》《自悼赋》以及左贵嫔《离思赋》四篇汉晋宫怨诗赋,向人们昭示了古代宫廷女性,尤其是宫妃几难避免的生命悲剧。四篇诗赋在古代宫怨文学的建构中提供了经典的范式,形成望幸、忧宠、自悼、思亲四个情感主题,在中国宫怨文学情感与主题史上起到了不容忽视的奠基作用和导向意义。