复合电子传输层结构非掺杂的蓝色有机荧光电致发光器件

采用TPBi/Alq3作为复合电子传输层,制备了发光层非掺杂结构的蓝色有机荧光电致发光器件.器件的最大电流效率为3.0 cd/A,对应的发光亮度为6 178 cd/m2,发光色坐标位于(0.167,0.161).器件的最大发光亮度为14 240 cd/m2.电压从6 V增加到14 V过程中,器件的色坐标变化量ΔCIExy仅为(0.001,0.002).通过插入的激子探测层研究发现,器件的激子形成区域主要位于DOPPP/TPBi界面处.     

利用双发光层结构提高N-BDAVBi掺杂器件的效率

制备了基于N-BDAVBi的高效率双发光层蓝色有机电致发光器件(OLED),器件中将蓝色荧光染料NBDAVBi作为客体发光材料分别掺入主体材料TCTA和TPBi中,器件结构为ITO/m-MTDATA(40 nm)/NPB(10nm)/TCTA:N-BDAVBi(15 nm)/TPBi:N-BDAVBi(15 nm)/TPBi(30 nm)/LiF(0.6 nm)/Al(150 nm),最大电流效率达到8.44 cd/A,CIE色坐标为(0.176,0.314),并且在12 V的电压下,亮度最大达到11 860 cd/m2,分别是单发光层结构器件的1.85倍和1.2倍.器件性能提高主要归因于双发光层扩大了载流子复合区域,主客体间的Forster能量转移.     

基于DSA-Ph高效率色稳定的蓝色荧光有机电致发光器件

采用蓝色荧光有机染料DSA-Ph作为客体材料,将其掺入主体材料BUBH-3中,制备了高效率色稳定的单发光层掺杂结构的蓝色有机荧光器件.当DSA-Ph掺杂质量比为3 wt.%时,器件的最大电流效率4.17 cd/A,对应色坐标为(0.161,0.286),亮度为5 038 cd/m2.当电压为14 V时,器件的最大亮度为16 160 cd/m2.另外,亮度从907 cd/m2增加到14 680 cd/m2过程中,其色坐标从(0.163,0.287)到(0.159,0.281),变化量ΔCIExy仅为(0.004,0.006).     

主体材料对蓝色磷光有机电致发光器件的影响

采用空穴传输材料4,4',4″-Tris(carbazol-9-yl)triphenylamine(TcTa)和电子传输材料1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene(TmPyPB)分别作为器件的发光层主体,蓝色磷光染料bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)iridium III(Firpic)为客体,制备了蓝色磷光有机电致发光器件,研究了Firpic掺入不同主体材料对器件光电性能的影响.由于发光层相对平衡的载流子注入和传输,使TcTa为主体的器件表现出较优的光电性能.器件的最大发光亮度为5 536 cd/m~2,最大电流效率和功率效率分别为12.8 cd/A和8.0 lm/W.     

加CdS薄层的白色有机电致发光器件色度的优化

文章讨论了利用蓝色磷光小分子铱配合物[iridium(III)bis-(4',6'-difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate(Fir6)]与黄色荧光染料Rubrene复合发光产生白光的设想.通过引入CdS薄层而增加电子注入,利用结构为ITO/2-TNATA/NPB/Rubrene/CBP/CBP:Fir6/CBP/Bphen/CdS/LiF/Al的器件,通过增加激子阻挡层CBP,获得了色度较好的白色有机电致发光器件.当两层激子阻挡层CBP厚度均为3 nm时,电压从启亮电压3.4 V开始至9 V为止,器件的色坐标从(0.36,0.36)变化到(0.32,0.31),使器件的色度获得了很好的改善.     

ITO/TPD/Alq3/AI有机发光器件的制备及性能研究

研制了ITO/TPD/Alq3/Al结构有机发光器件(OLED),发光阈值6.5V,最大亮度达到4500cd/m2.着重分析了焦耳热对器件寿命、有机物稳定性、载流子的传输复合的影响.     

利用CuI掺杂NPB结构增强有机磷光电致发光器件的空穴注入

增强空穴注入能力是提高有机电致发光器件(OLEDs)光电性能的一个重要因素.采用碱金属化合物Cu I掺杂NPB结构作为器件的空穴注入层,制备了空穴注入能力增强的有机磷光器件.当发光亮度为1 000 cd/m2时,器件的驱动电压为6. 44 V,相比于参考器件降低了约2. 11 V;器件的最大功率效率为7. 7 lm/W,相比于参考器件提高了约71%;器件的最大亮度达到41 570 cd/m2.上述实验结果表明,优化的Cu I:NPB结构有效促进了器件的空穴注入和传输能力,从而降低了驱动电压,提高了发光亮度,改善了功率效率.     

基于红色TADF的低效率滚降暖白色有机电致发光器件

采用红色TADF染料4CzTPN-Ph与蓝色磷光染料Firpic作为发光染料,同时掺入高三线态双极性主体26DCzPPy中,制备了低效率滚降、结构简单的暖白色有机电致发光器件.器件最大电流效率为12. 5 cd/A,最大发光亮度为10 000 cd/m2,最大外量子效率为5. 6%.当发光亮度达到1 000 cd/m2时,器件的外量子效率滚降约10%.当发光亮度增至5 000 cd/m2时,外量子效率滚降仅约17%.低效率滚降主要源于发光层中量子阱结构的设计,将电子有效限制在发光层中,使激子复合区域进一步扩宽,降低了发光层中的激子浓度.     

Alq3有机发光器件的研制及寿命研究

以铟锡氧化物 (ITO)为透明电极 ,8 羟基喹啉铝 (Alq3)为发光层 ,研制成ITO/Alq3/Al结构有机电致发光器件 (OLED) .测量表明其载流子的注入满足隧穿理论 ,发光阈值电压～ 1 2V ,所发绿光在正常室内环境下清晰可见 .通过电流随时间的变化测量了器件的工作寿命 ,并对影响器件寿命的原因作了分析 .     

调整空穴注入层MeO-TAD厚度改善蓝色OLED的性能

主要介绍结构为MeO-TAD(xnm)/NPB(40nm)/DPVBi(30nm)/Alq(30nm)/LiF(0.5nm)/AL的蓝色有机电致发光器件,空穴注入层MeO-TAD的厚度x按照0nm、1.0nm、1.5nm、2.0nm变化,其它层保持不变.当x=2nm时,其器件性能最好,在15V时亮度达到最大,为5876cd/m2.器件的开启电压较低,在5V的驱动电压下亮度达到10.5cd/m2,器件在8V电压时电流效率达到最大,为3.22cd/A;且器件的色坐标稳定,在5V到13V的驱动电压下几乎不发生改变,稳定在x=0.17、y=0.18附近,属于很好的蓝光发射.     

基于N-BDAVBi的非掺杂高效蓝色OLEDs

采用真空蒸镀方法,制备了以N-BDAVBi为发光层的高效率非掺杂蓝色有机电致发光器件,器件的结构为ITO/2T-NATA(40 nm)/NPB( 10 nm)/N-BDAVBi( (3+d) nm)/ADN(7 nm)/N-BDAVBi( (3+d) nm)/ADN (7 nm)/Alq3 (30 nm)/LiF(0....     

Electrical bistable characteristics of poly（phenylene sulfide） thin film deposited by thermal evaporation

Poly（phenylene sulfide） （PPS） is a well-known organic insulator. However, the PPS thin film, deposited by thermal evaporation in vacuum, showed electrical bistable characteristics. The structure of the PPS thin-film device was glass/ITOIPPS （300 nm）/Au. The thin film can be converted to a high conductance state by applying a pulse of 80 V （5 s）, and brought back to a low conductance state by applying a pulse of 100 V （5 s）. This kind of thin film is potential for active layer of a memory device. The critical voltage of the device is about 40 V, while the read-out voltage is 5 V. We tentatively ascribe the bistable phenomenon to the charge transfer from S to C atoms in the PPS molecule chains.     

Study on temperature characteristics of organic light-emitting diodes based on tris-（8-hydroxylquinoline）-aluminum

Both single-layer and double-layer organic light-emitting devices based on tris-（8-hydroxylquino- line）-aluminum （AIq3） as emitter are fabricated by thermal vacuum deposition. The electroluminescent characteristica of these devices at various temperatures are measured, and the temperature characteristics of device performance are studied. The effect of temperature on device current conduction regime is analyzed in detail. The results show that the current-voltage （I-V） characteristics of devices are in good agreement with the theoretical prediction of trapped charge limited current （TCLC）. In addition, both the charge carrier mobility and charge carrier concentration in the organic layer increase with the rise of temperature, which results in the monotonous increase of AIq3 device current. The current conduction mechanisms of two devices at different temperatures are identical, but the exponent m in current-voltage equation changes randomly with temperature. The device luminance increases slightly and the efficiency decreases monotonously due to the aging of AIq3 luminescent properties caused by high temperature. A tiny blue shift can be observed in the electroluminescent （EL） spectra as the temperature increases, and the reduction of device monochromaticity is caused by the intrinsic characteristics of organic semiconductor energy levels.     

大功率P沟道VDMOS器件设计与工艺仿真

作为现代电力电子核心器件之一的P沟道VDMOS(vertical double-diffuse,MOS)器件,一直以来由于应用领域狭窄而并未得到足够的研究。以P沟道VDMOS器件为研究对象,为一款击穿电压超过-200V的P沟道VDMOS设计了有源区的元胞结构及复合耐压终端结构,并开发了一套完整的P沟道VDMOS专用非自对准工艺流程。最后通过仿真得到器件的击穿电压超过-200V,阈值电压为-2.78V,完全满足了设计要求,也为下一步流片提供了有益的参考。     

基于CBP掺杂DPIHQZn的有机电致黄光器件

采用锌金属配合物DPIHQZn((E)-2-(4-(4,5-diphenyl-1H-imidazol-2-yl)styryl)quinolin-Zinc),将其掺杂到CBP中作为黄光发射层,制备了黄色有机电致发光器件(OLED),器件结构:ITO/2T-NATA(20 nm)/CBP:x wt.%DPIHQZn(30 nm)/Alq3(40 nm)/LiF(0.5 nm)/Al,研究了4种不同掺杂浓度(x=5,10,15,20)对黄光器件性能的影响,利用黄光发射层中主体材料与客体材料之间能量转移特性,得到了性能较好的有机电致黄光器件.在相同条件下,当掺杂浓度为15%时,其性能在4组器件中达到最佳,在驱动电压为14 V时呈黄光发射,器件最大亮度达到4 261 cd/m2,最大电流效率为0.84 cd/A,器件的色坐标稳定.     

White organic light-emitting devices using Zn（BTZ）2 doped with Rubrene as emitting layer

Zn(BTZ)2 was synthesized from the complex reaction between zinc acetate dihydrate and 2-(2-hydroxyphenyl) benzothiazolate. Then Zn(BTZ)2 was used as main light-emitting material doped with different amounts of fluorescent dye Rubrene and fabricated a series of white organic light emitting devices. The configurations were as follows: ITO/PVK:TPD/Zn(BTZ)2:Rubrene/Al. The doping concentration of Rubrene in Zn(BTZ)2 was 1.2%, 0.12%, 0.08% and 0.05%, respectively. According to the EL spectra and CIE coordinates of the above devices, the optimum doping concentration (0.05%, weight percent) had been determined. The steady and bright white light emitting of the device with 0.05% doping concentration had been obtained, and the white emission covered a wide range of driving voltage (10--22.5 V). The CIE coordinates were (x=0.341, y=0.334) at the driving voltage of 20 V, which was very close to the equi-energy point (x=0.333, y=0.333), and the corresponding luminance and external quantum efficiency were 4048 Cd/m^2 and 0.63% (4.05 Cd/A), respectively. Lastly, we also discussed the emitting mechanisms of the material and the devices.     

Se与Te替位掺杂对WS2-MoS2纳米器件电子输运性质的影响

基于密度泛函理论与非平衡格林函数相结合的第一性原理计算方法,研究了Se与Te原子替位掺杂对WS₂-MoS₂纳米器件电子输运性质的影响.结果表明,WS₂-MoS₂纳米器件为间接带隙半导体,器件电流在[+0.7 V,+1.0 V]与[-1.0 V,-0.9 V]偏压范围内随着偏压的增大逐渐减小,呈现显著的负微分电阻效应;Se与Te原子对WS₂-MoS₂纳米器件进行替位掺杂后均呈现有趣的负微分电阻效应,器件两端电流的隧穿也显著改善;Se原子对WS₂-MoS₂纳米器件中S原子进行替位掺杂时,器件转化为p型半导体;Te原子对WS₂-MoS₂纳米器件中S原子进行替位掺杂时,器件转化为p型半导体甚至金属,且导电性能大幅提升.     

共轭聚合物MDMO-PPV的压阻效应研究

本文使用纳米压痕技术测试了聚[2-甲氧基-5-(3′,7′-二甲基辛氧基)-1,4-苯乙炔](MDMO-PPV)的机械性能,发现MDMO-PPV薄膜的杨氏模量与测试时的最大载荷相关.当载荷撤去后,在薄膜上有一个可以通过预压除去的残余形变.预压处理后,薄膜表现出良好的弹性.我们还制备了ITO\MDMO-PPV(80nm)\Al(75nm)结构的压阻器件,测试了在不同压力下的J-V特性曲线.在电压小于1V时,器件的电流传输机制在不同外加压力下均呈现欧姆定律机制;而在电压2~5V范围内,随外加压力增大,电流传输呈现陷阱电荷传输机制(TCLC)和欧姆定律机制共同作用,并逐渐转变为欧姆定律机制.器件在工作电压为1.5V时压阻系数最大,达到3.92×10-2 Pa-1.最后我们对外加压力如何影响器件电流的传输提出了一种可能的机理解释.     

Fabrication and spectra characteristics of high efficiency white organic light-emitting diodes with single emitting layer

High-efficiency white organic light-emitting devices with single emitting layer are demonstrated. N,N‘-diphenyI-N,N‘-bis(1,1‘-biphenyl)-4,4‘-diamine (NPB) is used as hole transport layer, while 4,7-diphenyl-l,10-phenan-throline (BPhen) as electron transport layer and 9,10-di-(2-naphthyl)-2-terbutyl-anthracene (TADN) doped with the fluorescent dye 4-(dicyanomethylene)-2-t-buty1-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) (DCJTB) as single emissive layer. The effects of performance by the concentration of DCJTB and the thickness of emissive layer are studied. The device with a structure of indium tin oxide/NPB (50 nm)/TADN: 0.2% DCJTB (15 nm)/BPhen (40 nm)/Mg: Ag shows a maximum brightness of 11400 cd/m^2, a peak current efficiency of 5.6 cd/A and power efficiency of 4.1 Ira/W, while the low turn-on voltage of 3.1 V and the stability of the Commission International De L‘Eclairage coordinate. The spectra through color filter of the device are also studied.     

TiO2/P3HT复合太阳能电池的制备和性能研究

用简单易行的一步水热法在透明导电玻璃FTO上制备了直径、密度及取向可控的TiO2纳米阵列,FTO同时作为底电极,用旋涂法将有机P型聚合物P3HT复合到阵列表面,磁控溅射制备Pt电极,组装TiO2/P3HT有机无机复合太阳能电池.通过XRD、SEM、紫外-可见光谱仪、I-V/J-V特性曲线等表征TiO2阵列薄膜及器件的结构、形貌和光电特性.研究制备TiO2纳米阵列的水热时间及无水乙醇的量对薄膜质量及复合太阳能电池光电性能的影响.通过优化各项参数,FTO/TiO2/P3HT/Pt简单双层结构的光器件在AM1.5,光强100mW/cm2下开,路电压Voc达到0.50V,光电转换效率IPCE达到0.11%.