Efficient silicon light-emitting diodes

Considerable effort is being expended on the development of efficient silicon light-emitting devices compatible with silicon-based integrated circuit technology. Although several approaches are being explored, all presently suffer from low emission efficiencies, with values in the 0.01-0.1% range regarded as high. Here we report a large increase in silicon light-emitting diode power conversion efficiency to values above 1% near room temperature-close to the values of representative direct bandgap emitters of a little more than a decade ago. Our devices are based on normally weak one- and two-phonon assisted sub-bandgap light-emission processes. Their design takes advantage of the reciprocity between light absorption and emission by maximizing absorption at relevant sub-bandgap wavelengths while reducing the scope for parasitic non-radiative recombination within the diode. Each feature individually is shown to improve the emission efficiency by a factor of ten, which accounts for the improvement by a factor of one hundred on the efficiency of baseline devices.     

Near infrared polymer light-emitting diodes

High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/LI/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7-bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNTI0). The electroluminescence (EL) spectrum of diodes from PFHDNTI0 is at 750 nm located inthe range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/m^2. The improvement of the diode‘s performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.     

High-efficiency conjugated-polymer-hosted blue phosphorescent light-emitting diodes

Highly-efficient blue phosphorescent light-emitting diodes were fabricated based on a conjugated-polymer host by doping bis(2-(4,6-difluorophenyl)-pyridinato-N,C2’) picolinate(FIrpic) into poly(9,9-dioctylfluorene)(PFO).Previously,conjugated polymers were not considered as potential hosts for blue phosphorescent dyes because of their low-lying triplet energy levels.Energy back transfer would occur and lead to poor luminescent efficiency in both photoluminescence(PL) and electroluminescence(EL) processes.However,by inserting a hole-transporting layer of poly(N-vinylcarbazole)(PVK),the energy back transfer was suppressed.At low FIrpic-doping concentrations,PFO emissions were completely quenched;with 8 wt% FIrpic,a maximum luminous efficiency of 11.5 cd/A was achieved.     

有机电致发光白光器件的研究

白光有机电致发光器件在显示领域有着极大的应用前景,受到人们广泛的关注.通过对白光有机电致发光器件的结构、工作原理、实验的可行性分析、工艺流程、存在的问题等方面进行了分析,对器件结构进行了优化设计,确定了合理的技术路线,提高白光电致发光器件中各成分的发光效率,从而得到了一种较为理想的有机白光电致发光器件.     

紫外LED研究进展

 氮化物紫外LED的发光波长覆盖210~400 nm的紫外波段,可广泛应用于工业、环境、医疗和生化探测等领域。近年来紫外LED的技术水平发展迅速,器件性能不断提升。由于高Al组分AlGaN材料的固有特性,目前深紫外LED的外量子效率和功率效率仍有大量提升空间。综述了近年来AlGaN基紫外LED的研究进展,阐述了限制其性能的AlGaN外延质量、高Al组分AlGaN材料的掺杂效率、紫外LED量子结构、紫外LED光提取效率及可靠性等核心难题以及取得的重要研究进展。预计到2025年,深紫外LED的量产单芯片光输出功率可突破瓦级,功率效率有望提升至20%以上,寿命达到万小时级别。     

An efficient room-temperature silicon-based light-emitting diode

There is an urgent requirement for an optical emitter that is compatible with standard, silicon-based ultra-large-scale integration (ULSI) technology. Bulk silicon has an indirect energy bandgap and is therefore highly inefficient as a light source, necessitating the use of other materials for the optical emitters. However, the introduction of these materials is usually incompatible with the strict processing requirements of existing ULSI technologies. Moreover, as the length scale of the devices decreases, electrons will spend increasingly more of their time in the connections between components; this interconnectivity problem could restrict further increases in computer chip processing power and speed in as little as five years. Many efforts have therefore been directed, with varying degrees of success, to engineering silicon-based materials that are efficient light emitters. Here, we describe the fabrication, using standard silicon processing techniques, of a silicon light-emitting diode (LED) that operates efficiently at room temperature. Boron is implanted into silicon both as a dopant to form a p-n junction, as well as a means of introducing dislocation loops. The dislocation loops introduce a local strain field, which modifies the band structure and provides spatial confinement of the charge carriers. It is this spatial confinement which allows room-temperature electroluminescence at the band-edge. This device strategy is highly compatible with ULSI technology, as boron ion implantation is already used as a standard method for the fabrication of silicon devices.     

含联吡啶结构单元的超支化发光聚合物的合成

利用Wittig-Horner方法合成了一种新的联吡啶基π-共轭分子，将其作为n-型发光单元（A2单体），同时将溶解性较好的丁氧基二取代的二苯乙烯基苯作为p-型发光单元（A′₂单体），采用A₂＋A′₂＋B₄的路线合成了一类新型的部分共轭型超支化发光聚合物。采用红外、核磁共振等手段对产物的结构进行了初步表征，用差示扫描量热仪（DSC）、热失重仪(TGA)、紫外-可见分光光度计（UV-Vis）和荧光分光光度计等仪器对产物的性能进行了研究。结果表明，相比于同类的线性聚合物聚对亚苯基乙烯，该聚合物具有优良的热稳定性、更高的玻璃化转变温度，在氯仿，四氢呋喃等溶剂中均具有优良的溶解性能，尤其是呈现出特有的光物理性能。     

Molecular-scale interface engineering for polymer light-emitting diodes

Achieving balanced electron-hole injection and perfect recombination of the charge carriers is central to the design of efficient polymer light-emitting diodes (LEDs). A number of approaches have focused on modification of the injection contacts, for example by incorporating an additional conducting-polymer layer at the indium-tin oxide (ITO) anode. Recently, the layer-by-layer polyelectrolyte deposition route has been developed for the fabrication of ultrathin polymer layers. Using this route, we previously incorporated ultrathin (<100 A) charge-injection interfacial layers in polymer LEDs. Here we show how molecular-scale engineering of these interlayers to form stepped and graded electronic profiles can lead to remarkably efficient single-layer polymer LEDs. These devices exhibit nearly balanced injection, near-perfect recombination, and greatly reduced pre-turn-on leakage currents. A green-emitting LED comprising a poly(p-phenylene vinylene) derivative sandwiched between a calcium cathode and the modified ITO anode yields an external forward efficiency of 6.0 per cent (estimated internal efficiency, 15-20 per cent) at a luminance of 1,600 candelas per m2 at 5 V.     

叠层结构有机电致发光器件

制备了叠层结构的有机电致发光器件;采用电荷生成层将两个发光单元串接起来,各个发光单元之间互不影响,由两个发光单元分别发出的光叠加,得到高效率的有机电致发光器件.