磁致电阻效应的最新研究进展及其在信息存储领域的应用

介绍了磁致电阻效应在信息存储领域的研究现状和发展趋势,总结了巨磁电阻效应、隧道巨磁电阻效应以及自旋传输矩效应的理论模型,分析了这些磁致电阻效应的物理机制。     

铁磁金属纳米点接触的磁电阻

分析和比较了运用不同制作方法制作的铁磁金属纳米点接触样品的弹道磁电阻现象,探讨了由于磁致伸缩或微磁力等机械因素引起的力致电阻效应对纳米点接触样品电阻的变化所产生的影响,在实验中得出了样品在磁场作用下所观察到的大比例的弹道磁电阻效应可能与力致电阻效应相关.     

铁磁性Er0.2Sm0.8Mn6Ge6化合物的正磁电阻效应

对天然多层膜材料Er0.2Sm0.8Mn6Ge6化合物(441 K以下为铁磁性)磁电阻和热容进行了测量,结果表明,使用50 kOe的外磁场,Er0.2Sm0.8Mn6Ge6化合物的磁电阻值在45 K以下为正,随着温度的降低,磁电阻逐渐增大,最大磁电阻达5.89%.本文对于铁磁体中出现正磁电阻给出了解释.     

磁场对钙钛矿锰氧化物La0．8MnO3＋δ磁电阻的影响

采用固相烧结法在一定温度下烧结并退火得到钙钛矿锰氧化物La0．8MnO3＋δ大块多晶样品,研究这些样品在不同磁场下的磁电阻效应．结果表明,所有样品不管是否加磁场都存在金属一绝缘体转变,并且都有明显的磁电阻效应,另外磁场的变化对磁电阻效应有显著影响．     

Co/Cu/Co结构中纳米氮化物界面掺杂研究

研究了纳米氮化物(NNL)界面掺杂对Co/Cu/Co磁电阻的影响.当NNL在下界面(Co/Cu)掺杂时,得到了反常磁电阻为-0.043%;当NNL在上界面(Cu/Co)掺杂时,磁电阻近似为0;当NNL同时在上、下界面掺杂时,得到的反常磁电阻为-0.005%.运用Camley-Barnas的玻尔兹曼半经典理论模型,通过调整界面参数计算其磁电阻,发现改变界面自旋相关散射系数能对实验结果给出合理解释,证明了NNL掺杂确实能改变界面自旋相关散射系数.     

颗粒系统稀土掺杂氧化物的磁电阻效应

具有钙钵矿结构的稀土掺杂氧化物具有很强的磁电阻效应，该类材料所显示的复杂的物理现象和可能的应用前景引起人们的很大兴趣。但是其磁转变温度一般低于室温，而且需要很高的外加磁场才能够饱和。为实现室温和低场磁电阻，人们采用多种方法，如制备复合材料或尺寸在纳米量级的多晶体系。本文重点介绍了锰酸盐颗粒体系的结构特点、磁电阻效应以及产生成电阻效应的可能机理。     

（La1—xSmx）2／3Sr1／3MnO3材料的巨磁致伸缩及磁电阻效应

采用溶胶凝胶法制备了一系列的多晶 (La1 -xSmx) 2 / 3Sr1 / 3MnO3样品 X射线衍射研究表明 ,随Sm含量的增加 ,样品出现从菱面相向正交相结构的转变 在低温下观察到一定Sm含量的样品具有约 -180× 10 - 6大小的磁致伸缩和 32 0 %的磁电阻效应 在室温下 ,样品的磁致伸缩和磁电阻随Sm含量的变化有类似的关系     

La Ag MnO 多晶非均匀颗粒系统的巨磁电阻效应

采用固相烧结法制备了名义成分为La Ag MnO(0≤x≤0.50)的大块多晶样品,并且首次研究了它们的巨磁电阻效应。分析表明：当x≤0.25时,样品基本上由单一的钙钛矿结构相组成;当x＞0.25时样品明显由两相组成,钙钛矿结构相和富Ag合金相。它们组成了一个非均匀的颗粒系统。在x=0.30时,具有高达25.5％的巨磁电阻效应。非均匀颗粒系统呈现的磁电阻效应与电子在两相颗粒界面的自旋相关散射有关。     

纳米磁性颗粒点阵的磁电阻效应

纳米颗粒高密度排列体系有其独特的磁学和电输运性质.主要研究了具有单轴各向异性的单畴磁性颗粒二维正方点阵的磁性和隧穿磁电阻效应.纳米磁性颗粒规则地浸在绝缘基质中.自旋电子在点阵中的输运主要来源于隧穿磁电阻.颗粒磁矩的取向与隧穿磁电阻的大小直接相关.我们发现磁偶极矩相互作用的强弱及温度对该种纳米颗粒点阵系统中的磁学和电输运性质有重要的影响.弱偶极相互作用下,系统的磁化强度和隧穿磁电阻随温度的增加而减小.在给定温度时,偶极相互作用强度的增加,使系统出现由低电阻状态向高电阻状态的转变.强偶极相互作用使系统出现明显的磁电阻各向异性.     

自旋反转效应对铁磁/绝缘层/铁磁结中的隧道磁电阻的影响

考虑到自旋反转效应,用量子力学隧穿方法,计算铁磁/绝缘层/铁磁结中的隧道磁电阻,计算结果表明自旋反转使铁磁/绝缘层/铁磁结中的隧道磁电阻减小.     

NiCo-Ag纳米颗粒膜输运性质的研究

采用离子束溅射技术制备了一系列不同含量x的(Ni0.8Co0．2)x-Ag1-x。颗粒膜样品，并对样品的各向异性磁电阻和巨磁电阻效应进行了研究，在x=0．4的样品中，GMR值达最大值，为-3％，而AMR值在x=0．75时为0．8％。随着NiCo质量分数x的增加，电子输运行为有着一个从GMRAMR的转变。考察其输运性质，试图来更深入地理解各向异性磁电阻和巨磁电阻效应的物理本质。     

Magnetic tunnel junctions (MTJs)

We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.     

Magnetoresistance from quantum interference effects in ferromagnets

The desire to maximize the sensitivity of read/write heads (and thus the information density) of magnetic storage devices has stimulated interest in the discovery and design of new magnetic materials exhibiting magnetoresistance. Recent discoveries include the 'colossal' magnetoresistance in the manganites and the enhanced magnetoresistance in low-carrier-density ferromagnets. An important feature of these systems is that the electrons involved in electrical conduction are different from those responsible for the magnetism. The latter are localized and act as scattering sites for the mobile electrons, and it is the field tuning of the scattering strength that ultimately gives rise to the observed magnetoresistance. Here we argue that magnetoresistance can arise by a different mechanism in certain ferromagnets--quantum interference effects rather than simple scattering. The ferromagnets in question are disordered, low-carrier-density magnets where the same electrons are responsible for both the magnetic properties and electrical conduction. The resulting magnetoresistance is positive (that is, the resistance increases in response to an applied magnetic field) and only weakly temperature-dependent below the Curie point.     

Tunnel magnetoresistance (TMR) in ferromagnetic metalinsulator granular films

We review the recently discovered tunnel-type giant magnetoresistance (GMR) in ferromagnetic metalinsulator granular thin films, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal particles. The theoretical and experimental results including electrical resistivity, magnetoresistance and their temperature dependence are described. Limitations to the applications of the ferromagnetic metalinsulator granular films are also discussed. Additionally, a brief survey of another two magnetic properties, high-frequency property and giant Hall effect (GHE) associated strongly with the granular structures is also presented.     

金刚石膜磁阻效应

在F－S薄膜理论的基础上,考虑了晶格散射和杂质散射,通过求解驰豫近似下的Boltzmann方程,计算了P型单晶半导体金刚石膜（矩形）在球形能带下的电导率及考虑金刚石的轻空穴带、重穴穴带和分裂带为并联电阻模型时的磁阻,给出了磁阻和金刚石膜厚度,磁场强度、迁移率的关系。研究表明：金刚石的轻空穴带、重空穴带和分裂带对磁阻的影响不相同。厚膜的磁阻和块材的磁阻相差不大,磁阻和温度、磁场强度,迁移率有密切关系。     

四氧化三铁薄膜的电子输运性能

20世纪80年代后期,人们对电子器件小型化、高集成度以及高运算速度提出了更高的要求,以此为目标,通过对磁性多层膜、磁性颗粒膜、磁性半金属材料的巨磁电效应、霍耳效应等自旋相关电子输运性能的研究,逐渐形成了一门新兴的交叉学科-自旋电子学[1].自旋电子学将电子的自旋特性引     

巨磁电阻效应

重点综述了磁性多层膜、颗粒膜、钙钛矿型氧化物及铁磁薄膜隧道结等几种不同结构类型的巨磁电阻效应的研究现状及其进展情况,并简述了巨磁电阻的物理机制及磁传感器、随机存储器和高密度读出头等几方面的应用,还涉及到了制备这些巨磁电阻材料的常用方法,并列举了10种不同组分的巨磁电阻材料,还说明了特大磁电阻和巨磁电阻的不同。     

巨磁电阻自旋阀多层膜的结构和磁性

用磁控溅射镀膜方法，制成了巨磁电阻自旋阀多层膜Ｔａ／ＮｉＦｅ／Ｃｕ／ＮｉＦｅ／ＦｅＭｎ／Ｔａ。它具有优良的特性。其室温磁电阻比率ＭＲ〉２％，自由层矫元力Ｈｃｌ〈１６０Ａ／ｍ，自由层零磁场漂Ｈｆ〈８００Ａ／ｍ和钉 扎层交换场Ｈｅｘ≈２０×１０＾３Ａ／Ｍ。     

Magnetoresistive behavior and magnetization reversal of NiFe/Cu/CoFe/IrMn spin valve GMRs in nanoscale

The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance (SV-GMR) in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio (MR) and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.     

Magnetoresistance of the thin film ferromagnetic nanoconstrictions

The magnetoresistance and I-V characteristics at different temperatures of the thin film ferromagnetic nanoconstrictions of variable width (from 20 to 250 nm) and 10 nm thicknesses, fabricated by electron beam lithography and vacuum thin film deposition are compared. The magnetoresistance and resistance of the thin film ferromagnetic nanoconstrictions are not related to the width of the nanoconstrictions. Instead the resistance of the local nano-region in the middle of the thin film ferromagnetic nanoconstriction has only a minor role compared to that of the two microscale thin film ferromagnetic electrodes, which contribute the majority of the measured resistance. The magnetoresistances of the thin film ferromagnetic nanoconstrictions and a 0.2 cm × 0.8 cm thin ferromagnetic film deposited under the same conditions were also compared; the thin film ferromagnetic nanoconstrictions have higher magnetoresistances than the thin ferromagnetic film, which implies that the measured magnetoresistance of the thin film ferromagnetic nanoconstrictions comes mainly from the local nano-region in their centers. In conclusion, the measured magnetoresistance of the whole sample is similar to the anisotropic magnetoresistance, because the resistance of the two microscale thin film ferromagnetic electrodes is much higher than that of the local nano-region in the middle of the samples. Comparing the experimental results for the thin film ferromagnetic nanoconstrictions and the thin ferromagnetic film reveals that the magnetoresistance of the local nano-region in the middle of the sample is much higher than that of the two microscale thin film ferromagnetic electrodes attached to it.