Oriented growth and assembly of zeolite crystals on substrates

The aligned array and thin film of zeolites and molecular sieves Possess a variety of potential applications in membrane separation and catalysis, chemical sensors, and microelectronic devices. There are two main synthesis methods for manufacturing the aligned arrays and thin films of zeolites and mo- lecular sieves, i.e. in situ hydrothermal reaction and self-assembly of crystal grains on substrates. Both of them have attracted much attention in the scientific community worldwide. A series of significant progress has been made in recent years. By the in situ hydrothermal synthesis, the oriented nucleation and growth of zeolite and molecular sieve crystals can be achieved by modifying the surface properties of substrstes or by changing the composition of synthesis solutions, leading to the formation of uni- formly oriented muIticrystal-aligned arrays or thin films. On the other hand, the crystal grains of zeo-lites and molecular sieves can be assembled onto the substrste surface in required orientation using different bondages, for instance, the microstructure in the array or thin film can be controlled. This review is going to summarize and comment the significant results and progress reported recently in manufacturing highly covered and uniformly aligned arrays or thin films of zeolites and molecular sieves. It involves （1） in situ growth of highly aligned zeolite arrays and thin films via embedding func-tional groups on the substrste surface, modifying the surface microstructure of substrates, as well as varying the composition of synthesis solutions; （2） assembly of zeolite and molecular sieve crystals on various substrates to form aligned arrays and thin films with full coverage by covalent, ionic, and in-termolecular coupling interactions between crystals and substrates; （3） coupling surface assembly with microcontact printing or photoetching technique to produce patterned zeolite arrays and thin films. Finally, the functionality and applications of zeolite arrays and thin films are briefly intr     

Cu衬底上ZnO纳米结构及其光催化性能分析

采用两步电化学沉积法在Cu衬底上沉积得到ZnO纳米结构薄膜。用X-射线衍射（XRD）和扫描电子显微镜（SEM）对其结构及形貌进行表征,发现先在Cu衬底上沉积一层Zn致密膜,更有利于在其表面上得到附着力强、形貌较好的ZnO纳米结构膜。系统考察了沉积温度和沉积时间等工艺参数对ZnO纳米结构的影响。结果表明,沉积温度和沉积时间对晶体结构和形貌有显著影响,通过对工艺进行适宜控制可以得到结晶性良好的六方纤锌矿型ZnO纳米结构膜。以罗丹明B为目标有机污染物,分析了ZnO膜的光催化性能,表明所制备的ZnO膜可以作为光催化剂,其光催化效率可达到72.4%。     

DDME分子在石墨(HOPG)表面吸附

用扫描隧道显微镜(STM)研究了用真空沉积法在高定向有序石墨(HOPG)上制备的1, 1dicyano-2, 2-(4-dimethylaminophenyl) ethylene(DDME)薄膜。DDME在石墨表面形成十分平整的分子柱状堆积二维有序结构。还观察到了随覆盖度降低转变成为其他二维有序结构,并对其形成机理进行了研究。     

自组装单层膜的研究

自组装膜(self-assembled monolayers,SAMs)是通过有机分子反应活性头基与固体界面之间自发反应形成的稳定、有序、紧密堆积的超薄膜结构.近年来,通过界面自组装在固体表面形成超薄层有机材料的研究受到人们的广泛关注,在非线形化学、分子生物学、材料科学、分子器件、生物传感器等领域具有广泛的应用前景.对自组装单层膜的制备、特点、类型、机理和应用等方面进行了探讨.     

超薄润滑膜界面滑移现象的分子动力学研究

为研究超薄润滑膜的流变和滑移特性 ,采用了分子动力学模拟方法。模拟系统由 2个固体壁面和介于壁面间的润滑剂分子构成 ,分子模型为正癸烷。结果表明 :薄膜中粒子密度沿膜厚方向呈周期性变化 ,存在某种有序结构 ;薄膜中润滑剂分子的平均速度仍大体呈线性分布 ,但在固液界面和液体层间可以观察到滑移现象 ;壁面滑移率随着剪切率的增加而上升 ,并在高剪切率区迅速增大 ;分子级薄膜中一个重要现象是滑移可能在较低的剪切率下发生 ;薄膜中润滑剂经历着向固态转化的相变过程 ,低剪切率下的滑移率可作为衡量薄膜固化程度的定量判据     

碳纳米管阵列储氢的物理吸附特性

采用巨正则蒙特卡罗方法,在室温、100大气压下对以方阵和三角方式排列的碳纳米管阵列的物理吸附储氢进行计算机模拟,发现氢分子可被吸附于碳纳米管阵列的管内和管外,管外的储氢密度普遍高于管内,方阵阵列优于三角阵列,并给出了相应的理论解释。     

基底温度对氮化硼薄膜场发射特性的影响

利用射频磁控溅射方法， 真空室中充入高纯N_{2(99.99%)和高纯Ar（99.99%）的混合气体， 在n型（100）Si基底上沉积了六角氮化硼（h-BN）薄膜. 在超高真空（<10^-7 Pa）系统中测量了BN薄膜的场发射特性， 发现 沉积时基底温度对BN薄膜的场发射特性有很大影响. 基底温度为500 ℃时沉积的BN薄膜样品场发射特性要好于其他薄膜， 阈值电场为12 V/μm， 电场升到34 V/μm， 场发射电流为280 μA/cm². 所有样品的Fowler-Nordheim(F-N)曲线均近似为直线， 表明电子是通过 隧道效应穿透BN薄膜发射到真空的.}     

低温光化学生长金属钯薄膜研究

报道了新一代紫外光源--激发态双分子(Excimer)紫外光源在制备金属薄膜材料方面的应用研究.金属钯是一种优良的催化剂,首先在各种衬底如Al2O3、AIN、玻璃以及聚合物等上面淀积钯的金属有机化合物薄膜,通过紫外光分解钯的金属有机化合物,形成数埃到几十埃的钯膜,然后再利用钯的催化效应,在无电极电镀液中淀积出几十纳米到几微米厚的各种金属薄膜(如Cu、Au、Ni等).     

椭偏光谱法研究激光脉冲沉积MgO薄膜材料生长

用激光脉冲沉积技术生长、制备出了一系列不同真空度、不间衬底温度和不同激光脉冲能量的Mgo薄膜。对生长、制备出的一系列Mgo薄膜进行了椭偏光谱测量研究，在300-800nm光谱波长范围内，得到了不同条件下生长制备的MgO薄膜的光学常数谱和膜厚，其结果显示：真空度、衬底温度和激光脉冲能量对生长Mgo薄膜的折射率、膜厚均有影响，高真空、高衬底温度和适中的激光脉冲能量有利于生长制备高折射率、高密度和高质量的Mgo薄膜。     

Study on temperature characteristics of organic light-emitting diodes based on tris-（8-hydroxylquinoline）-aluminum

Both single-layer and double-layer organic light-emitting devices based on tris-（8-hydroxylquino- line）-aluminum （AIq3） as emitter are fabricated by thermal vacuum deposition. The electroluminescent characteristica of these devices at various temperatures are measured, and the temperature characteristics of device performance are studied. The effect of temperature on device current conduction regime is analyzed in detail. The results show that the current-voltage （I-V） characteristics of devices are in good agreement with the theoretical prediction of trapped charge limited current （TCLC）. In addition, both the charge carrier mobility and charge carrier concentration in the organic layer increase with the rise of temperature, which results in the monotonous increase of AIq3 device current. The current conduction mechanisms of two devices at different temperatures are identical, but the exponent m in current-voltage equation changes randomly with temperature. The device luminance increases slightly and the efficiency decreases monotonously due to the aging of AIq3 luminescent properties caused by high temperature. A tiny blue shift can be observed in the electroluminescent （EL） spectra as the temperature increases, and the reduction of device monochromaticity is caused by the intrinsic characteristics of organic semiconductor energy levels.     

Effects of deposition parameters on the properties of VO_2 thin films

Up to now, much attention has been paid tovanadiumoxide (VOx) thinfil ms due to their exten-sive applications in the infrared microbolometers .Incontrast tothe conventional photon detectors ,the mi-crobolometer using VOxthinfil ms as sensitive materi-als can offer decreased systemcost ,i mproved reliabil-ity,low power-consumption and high sensitivity inthe spectral range of 8—14μm.Vanadiumoxides have various crystal structuresand valency states ,such as VO, V2O3, VO2, V2O5,whichleads tol…     

Coulomb-blockade transport in single-crystal organic thin-film transistors

Coulomb-blockade transport--whereby the Coulomb interaction between electrons can prohibit their transport around a circuit--occurs in systems in which both the tunnel resistance, Rb between neighbouring sites is large (>h/e2) and the charging energy, E(C) (E(C) = e2/2C, where C is the capacitance of the site), of an excess electron on a site is large compared to kT. (Here e is the charge of an electron, k is Boltzmann's constant, and h is Planck's constant.) The nature of the individual sites--metallic, superconducting, semiconducting or quantum dot--is to first order irrelevant for this phenomenon to be observed. Coulomb blockade has also been observed in two-dimensional arrays of normal-metal tunnel junctions, but the relatively large capacitances of these micrometre-sized metal islands results in a small charging energy, and so the effect can be seen only at extremely low temperatures. Here we demonstrate that organic thin-film transistors based on highly ordered molecular materials can, to first order, also be considered as an array of sites separated by tunnel resistances. And as a result of the sub-nanometre sizes of the sites (the individual molecules), and hence their small capacitances, the charging energy dominates at room temperature. Conductivity measurements as a function of both gate bias and temperature reveal the presence of thermally activated transport, consistent with the conventional model of Coulomb blockade.     

Large scale production of carbon nanotube arrays on the sphere surface from liquefied petroleum gas at low cost

Liquefied petroleum gas (LPG), a cheap industrial material, is used as carbon source to produce carbon nanotube (CNT) arrays on ceramic spherical surface on a large scale in the floating catalyst process. The ceramic spheres provide huge surface area and good mobility, leading to the mass production of CNT arrays continuously. The arrays obtained from the surface are of good alignment, and the purity is as high as 97.5%. With the decrease of the growth temperature, CNTs in the array form with small-diameter of about 13 nm can be obtained. Therefore, with the industrial fuel as carbon source and the ceramic sphere as substrate, CNT arrays can easily be produced on large scale at low cost.     

固体薄膜的电子传输特性

霍尔系数和直流电导率是固体薄膜的主要电特性参数，我们测量了Ｐ－型Ｐｂ１－ｘＣｄｘＴｅ薄膜的霍尔系数和直流电导率，实验表明其禁带宽度和电子迁移率随镉组分ｘ的增在而增加，ｘ的增大在薄膜中增加了碲空位，该空位起施主杂质作用，在低温薯民离散射占优势，在较高温度超声子散射限制了载流子迁移率。     

化学水浴法制备ZnO阵列及其光伏性能研究

采用溶胶旋转涂覆技术和化学水浴两步工艺法制备了ZnO阵列,研究了种晶层对ZnO阵列的形貌、晶体结构的影响,并考察了所制备的ZnO阵列用作染料敏化太阳电池光电极的光伏性能.结果表明：沿（O02）晶面择优生长的种晶层,可为ZnO阵列的有序生长起到诱导作用,尤其是当种晶层面朝下放置时,ZnO阵列基本保持了种晶的结晶取向和尺寸大小,棒状阵列直径为50100nm.由此阵列作为光电极构成的DSCs的短路电流和填充因子较低,从而使得光电转换效率处于较低水平,主要原因可能是阵列太致密、薄膜厚度小,使得染料的吸附量低所致.     

沉积温度对NbN膜层微观结构的影响

利用有磁过滤器的等离子体沉积装置,在不同温度的Si基底上沉积氮化铌（NbN）薄膜,通过XRD,XPS,SEM等分析,研究了NbN薄的表面表貌与微观结构跟温度的关系,发现沉积温度对掺优取向有较强的影响：从室温到约300℃得到的薄膜在（220）峰表现出很强的择优取向,500℃（220）峰变得很弱,（200）峰表现出择优取向,但不明显,同时,膜层中N和Nb的原子比先随温度的升高而升高,后稍有降低,温度升高,δ-NbN的晶粒变大,室温到300℃很难得到完整的NbN膜,而在500℃得以的薄膜完整且光滑,膜层中得到单一的δ-NbN相。     

FCVAD合成Ta-C薄膜的Raman和XPS分析

用磁过滤阴极真空弧沉积（FCVAD）方法在Si衬底上合成了Ta-C薄膜,Raman光谱和光电子能谱（XPS）分析表明衬底加80-100V负偏压时合成的Ta-C薄膜sp^3键所占比例最高,可达80%以上,并且在Ta-C薄膜表面存在-sp^3键所占比例较低的薄层。     

Fabrication of tungsten films by metallorganic chemical vapor deposition

Tungsten films growing on copper substrates were fabricated by metallorganic chemical vapor deposition (MOCVD). The chemical purity, crystallographic phase, cross-sectional texture, and resistivity of the deposited films both before and after annealing treatment were investigated by X-ray energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and four-point probe method. It is found that the films deposited at 460℃ are metastable β-W with (211) orientation and can change into α-W when annealed in high-purity hydrogen atmosphere at high temperature. There are small amounts of C and O in the films, and the W content of the films increases with increasing deposition temperature and also goes up after annealing in high-purity hydrogen atmosphere. The films have columnar microstructures and the texture evolution during their growth on copper substrates can be divided into three stages. The resistivity of the as-deposited films is in the range of 87-104 μΩ·cm, and low resistivity is obtained after annealing in high-purity hydrogen atmosphere.     

Fabrication and field emission performance of arrays of vacuum microdiodes containing CuO nanowire emitters grown directly on glass without a catalyst

Arrays of vacuum microelectronic sources are fabricated on a glass substrate using cupric oxide (CuO) nanowire emitters. The arrays of electron sources possess a microdiode structure, which can effectively induce field emission and control the delivery of emitted electrons to the anode in a triode-type device operation. A technique for precisely growing CuO nanowires at the centre of microcavities in an array without using a catalyst and at temperatures as low as 400°C is presented. Such a simplified fabrication procedure results in improved field emission performance from the array compared with previous vacuum microelectronic devices. Typical prototype devices have turn-on gate voltages as low as 169 V to give emission current densities of 10 μA/cm2 at the anode. The ratio of anode current to cathode current reaches ~0.85, and the maximum change in emission current density per volt is 1 μA/cm2. Electron emission from the arrays is stable and reproducible under either pulsed or direct current fields. These characteristics indicate that microgate-controlled CuO nanowire emitters may find application in practical devices.     

Ohmic contact properties of p-type surface conductive layer on H-terminated diamond films prepared by DC arc jet CVD

With the advantages of high deposition rate and large deposition area, polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD) are considered to be one of the most promising materials for high-frequency and high-power electronic devices. In this paper, high-quality self-standing polycrystalline diamond films with the diameter of 100 mm were prepared by DC arc jet CVD, and then, the p-type surface conductive layer with the sheet carrier density of 1011-1013 cm?2 on the H-terminated diamond film was obtained by micro-wave hydrogen plasma treatment for 40 min. Ti/Au and Au films were deposited on the H-terminated diamond surface as the ohmic contact electrode, respectively, afterwards, they were treated by rapid vacuum annealing at different temperatures. The properties of these two types of ohmic contacts were investigated by measuring the specific contact resistance using the transmission line method (TLM). Due to the formation of Ti-related carbide at high temperature, the specific contact resistance of Ti/Au contact gradually decreases to 9.95 × 10?5 Ω·cm2 as the temperature increases to 820℃. However, when the annealing temperature reaches 850℃, the ohmic contact for Ti/Au is degraded significantly due to the strong diffusion and reaction between Ti and Au. As for the as-deposited Au contact, it shows an ohmic contact. After annealing treatment at 550℃, low specific contact resistance was detected for Au contact, which is derived from the enhancement of interdiffusion between Au and diamond films.