A three-dimensional optical photonic crystal with designed point defects

Photonic crystals offer unprecedented opportunities for miniaturization and integration of optical devices. They also exhibit a variety of new physical phenomena, including suppression or enhancement of spontaneous emission, low-threshold lasing, and quantum information processing. Various techniques for the fabrication of three-dimensional (3D) photonic crystals--such as silicon micromachining, wafer fusion bonding, holographic lithography, self-assembly, angled-etching, micromanipulation, glancing-angle deposition and auto-cloning--have been proposed and demonstrated with different levels of success. However, a critical step towards the fabrication of functional 3D devices, that is, the incorporation of microcavities or waveguides in a controllable way, has not been achieved at optical wavelengths. Here we present the fabrication of 3D photonic crystals that are particularly suited for optical device integration using a lithographic layer-by-layer approach. Point-defect microcavities are introduced during the fabrication process and optical measurements show they have resonant signatures around telecommunications wavelengths (1.3-1.5 microm). Measurements of reflectance and transmittance at near-infrared are in good agreement with numerical simulations.     

Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals

Control of spontaneously emitted light lies at the heart of quantum optics. It is essential for diverse applications ranging from miniature lasers and light-emitting diodes, to single-photon sources for quantum information, and to solar energy harvesting. To explore such new quantum optics applications, a suitably tailored dielectric environment is required in which the vacuum fluctuations that control spontaneous emission can be manipulated. Photonic crystals provide such an environment: they strongly modify the vacuum fluctuations, causing the decay of emitted light to be accelerated or slowed down, to reveal unusual statistics, or to be completely inhibited in the ideal case of a photonic bandgap. Here we study spontaneous emission from semiconductor quantum dots embedded in inverse opal photonic crystals. We show that the spectral distribution and time-dependent decay of light emitted from excitons confined in the quantum dots are controlled by the host photonic crystal. Modified emission is observed over large frequency bandwidths of 10%, orders of magnitude larger than reported for resonant optical microcavities. Both inhibited and enhanced decay rates are observed depending on the optical emission frequency, and they are controlled by the crystals' lattice parameter. Our experimental results provide a basis for all-solid-state dynamic control of optical quantum systems.     

基于表面等离激元的量子相干效应的理论研究

起源于金属中自由电子集体振荡的表面等离激元,具有超小的光学模式体积和亚波长局域的近场增益,为纳米尺度上研究光和物质相互作用带来新的机遇．共振的纳米金属结构的近场区域,具有各向异性的珀塞尔系数,并且可以为量子体系提供近场激发．我们理论上演示了基于表面等离激元结构的单分子共振荧光、原子布居数的本征量子拍频及其在表面等离激元结构中的纳米尺度上的实现、表面等离激元诱导的各向异性珀塞尔系数导致的亚波长尺度自发辐射谱线的变化．这些结果在超紧凑的有源量子器件中有潜在应用．     

Optical emission from a charge-tunable quantum ring

Quantum dots or rings are artificial nanometre-sized clusters that confine electrons in all three directions. They can be fabricated in a semiconductor system by embedding an island of low-bandgap material in a sea of material with a higher bandgap. Quantum dots are often referred to as artificial atoms because, when filled sequentially with electrons, the charging energies are pronounced for particular electron numbers; this is analogous to Hund's rules in atomic physics. But semiconductors also have a valence band with strong optical transitions to the conduction band. These transitions are the basis for the application of quantum dots as laser emitters, storage devices and fluorescence markers. Here we report how the optical emission (photoluminescence) of a single quantum ring changes as electrons are added one-by-one. We find that the emission energy changes abruptly whenever an electron is added to the artificial atom, and that the sizes of the jumps reveal a shell structure.     

Ultra-high-Q toroid microcavity on a chip

The circulation of light within dielectric volumes enables storage of optical power near specific resonant frequencies and is important in a wide range of fields including cavity quantum electrodynamics, photonics, biosensing and nonlinear optics. Optical trajectories occur near the interface of the volume with its surroundings, making their performance strongly dependent upon interface quality. With a nearly atomic-scale surface finish, surface-tension-induced microcavities such as liquid droplets or spheres are superior to all other dielectric microresonant structures when comparing photon lifetime or, equivalently, cavity Q factor. Despite these advantageous properties, the physical characteristics of such systems are not easily controlled during fabrication. It is known that wafer-based processing of resonators can achieve parallel processing and control, as well as integration with other functions. However, such resonators-on-a-chip suffer from Q factors that are many orders of magnitude lower than for surface-tension-induced microcavities, making them unsuitable for ultra-high-Q experiments. Here we demonstrate a process for producing silica toroid-shaped microresonators-on-a-chip with Q factors in excess of 100 million using a combination of lithography, dry etching and a selective reflow process. Such a high Q value was previously attainable only by droplets or microspheres and represents an improvement of nearly four orders of magnitude over previous chip-based resonators.     

Laser cooling and real-time measurement of the nuclear spin environment of a solid-state qubit

Control over quantum dynamics of open systems is one of the central challenges in quantum science and engineering. Coherent optical techniques, such as coherent population trapping involving dark resonances, are widely used to control quantum states of isolated atoms and ions. In conjunction with spontaneous emission, they allow for laser cooling of atomic motion, preparation and manipulation of atomic states, and rapid quantum optical measurements that are essential for applications in metrology. Here we show that these techniques can be applied to monitor and control individual atom-like impurities, and their local environment, in the solid state. Using all-optical manipulation of the electronic spin of an individual nitrogen-vacancy colour centre in diamond, we demonstrate optical cooling, real-time measurement and conditional preparation of its nuclear spin environment by post-selection. These methods offer potential applications ranging from all-optical nanomagnetometry to quantum feedback control of solid-state qubits, and may lead to new approaches for quantum information storage and processing.     

Generation of single optical plasmons in metallic nanowires coupled to quantum dots

Control over the interaction between single photons and individual optical emitters is an outstanding problem in quantum science and engineering. It is of interest for ultimate control over light quanta, as well as for potential applications such as efficient photon collection, single-photon switching and transistors, and long-range optical coupling of quantum bits. Recently, substantial advances have been made towards these goals, based on modifying photon fields around an emitter using high-finesse optical cavities. Here we demonstrate a cavity-free, broadband approach for engineering photon-emitter interactions via subwavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot is optically excited in close proximity to a silver nanowire, emission from the quantum dot couples directly to guided surface plasmons in the nanowire, causing the wire's ends to light up. Non-classical photon correlations between the emission from the quantum dot and the ends of the nanowire demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that efficient coupling is accompanied by more than 2.5-fold enhancement of the quantum dot spontaneous emission, in good agreement with theoretical predictions.     

Cavity solitons as pixels in semiconductor microcavities

Cavity solitons are localized intensity peaks that can form in a homogeneous background of radiation. They are generated by shining laser pulses into optical cavities that contain a nonlinear medium driven by a coherent field (holding beam). The ability to switch cavity solitons on and off and to control their location and motion by applying laser pulses makes them interesting as potential 'pixels' for reconfigurable arrays or all-optical processing units. Theoretical work on cavity solitons has stimulated a variety of experiments in macroscopic cavities and in systems with optical feedback. But for practical devices, it is desirable to generate cavity solitons in semiconductor structures, which would allow fast response and miniaturization. The existence of cavity solitons in semiconductor microcavities has been predicted theoretically, and precursors of cavity solitons have been observed, but clear experimental realization has been hindered by boundary-dependence of the resulting optical patterns-cavity solitons should be self-confined. Here we demonstrate the generation of cavity solitons in vertical cavity semiconductor microresonators that are electrically pumped above transparency but slightly below lasing threshold. We show that the generated optical spots can be written, erased and manipulated as objects independent of each other and of the boundary. Numerical simulations allow for a clearer interpretation of experimental results.     

量子阱微腔激光器中TE和TM模自发发射的差异

利用金属镜面微腔激光器中真空场和量子阱中电子态函数,对比了ＴＥ模和ＴＭ模的自发发射谱,发现腔长为半个波长的微腔激光器可以增进ＴＥ模垂直方向的自发发射,同时ＴＭ模却得到很大抑制,并且它们总的自发发射也存在差异。     

Controlling cavity reflectivity with a single quantum dot

Solid-state cavity quantum electrodynamics (QED) systems offer a robust and scalable platform for quantum optics experiments and the development of quantum information processing devices. In particular, systems based on photonic crystal nanocavities and semiconductor quantum dots have seen rapid progress. Recent experiments have allowed the observation of weak and strong coupling regimes of interaction between the photonic crystal cavity and a single quantum dot in photoluminescence. In the weak coupling regime, the quantum dot radiative lifetime is modified; in the strong coupling regime, the coupled quantum dot also modifies the cavity spectrum. Several proposals for scalable quantum information networks and quantum computation rely on direct probing of the cavity-quantum dot coupling, by means of resonant light scattering from strongly or weakly coupled quantum dots. Such experiments have recently been performed in atomic systems and superconducting circuit QED systems, but not in solid-state quantum dot-cavity QED systems. Here we present experimental evidence that this interaction can be probed in solid-state systems, and show that, as expected from theory, the quantum dot strongly modifies the cavity transmission and reflection spectra. We show that when the quantum dot is coupled to the cavity, photons that are resonant with its transition are prohibited from entering the cavity. We observe this effect as the quantum dot is tuned through the cavity and the coupling strength between them changes. At high intensity of the probe beam, we observe rapid saturation of the transmission dip. These measurements provide both a method for probing the cavity-quantum dot system and a step towards the realization of quantum devices based on coherent light scattering and large optical nonlinearities from quantum dots in photonic crystal cavities.     

High-temperature ultrafast polariton parametric amplification in semiconductor microcavities.

Cavity polaritons, the elementary optical excitations of semiconductor microcavities, may be understood as a superposition of excitons and cavity photons. Owing to their composite nature, these bosonic particles have a distinct optical response, at the same time very fast and highly nonlinear. Very efficient light amplification due to polariton-polariton parametric scattering has recently been reported in semiconductor microcavities at liquid-helium temperatures. Here we demonstrate polariton parametric amplification up to 120 K in GaAlAs-based microcavities and up to 220 K in CdTe-based microcavities. We show that the cut-off temperature for the amplification is ultimately determined by the binding energy of the exciton. A 5-micrometer-thick planar microcavity can amplify a weak light pulse more than 5,000 times. The effective gain coefficient of an equivalent homogeneous medium would be 107 cm-1. The subpicosecond duration and high efficiency of the amplification could be exploited for high-repetition all-optical microscopic switches and amplifiers. 105 polaritons occupy the same quantum state during the amplification, realizing a dynamical condensate of strongly interacting bosons which can be studied at high temperature.     

Ag纳米粒子增强CdS白光量子点器件的研制

在十八烯体系中合成Cd S量子点,用光诱导法制备银纳米粒子,并将两者复合,制备成4种复合样品,分析复合样品的荧光谱,在银纳米颗粒的表面等离子体共振峰分别对应于富含缺陷的硫化镉量子点的带边荧光峰和表面态荧光峰时,发生了带边荧光淬灭而表面态荧光增强的现象.结果表明,通过控制金属和量子点之间的距离,能够控制带边荧光辐射和缺陷带荧光辐射的比例,从而控制白光量子点的色温.采用395 nm紫光LED作为激发光源,将涂有荧光样品的玻片与激发光源组装成银纳米颗粒/量子点复合结构白光照明器件原型,银纳米粒子能够改变Cd S量子点样品发光颜色,荧光效应的增强程度随着量子点样品的厚度减小而加强.该研究为认识荧光物质和金属之间的相互作用提供了新途径,同时探讨了该器件在变色发光材料方向的应用前景.     

Raman injection laser

Stimulated Raman scattering is a nonlinear optical process that, in a broad variety of materials, enables the generation of optical gain at a frequency that is shifted from that of the incident radiation by an amount corresponding to the frequency of an internal oscillation of the material. This effect is the basis for a broad class of tunable sources known as Raman lasers. In general, these sources have only small gain (approximately 10(-9) cm W(-1)) and therefore require external pumping with powerful lasers, which limits their applications. Here we report the realization of a semiconductor injection Raman laser designed to circumvent these limitations. The physics underlying our device differs in a fundamental way from existing Raman lasers: it is based on triply resonant stimulated Raman scattering between quantum-confined states within the active region of a quantum cascade laser that serves as an internal optical pump--the device is driven electrically and no external laser pump is required. This leads to an enhancement of orders of magnitude in the Raman gain, high conversion efficiency and low threshold. Our lasers combine the advantages of nonlinear optical devices and of semiconductor injection lasers, and could lead to a new class of compact and wavelength-agile mid-and far-infrared light sources.     

Fabrication and field emission performance of arrays of vacuum microdiodes containing CuO nanowire emitters grown directly on glass without a catalyst

Arrays of vacuum microelectronic sources are fabricated on a glass substrate using cupric oxide (CuO) nanowire emitters. The arrays of electron sources possess a microdiode structure, which can effectively induce field emission and control the delivery of emitted electrons to the anode in a triode-type device operation. A technique for precisely growing CuO nanowires at the centre of microcavities in an array without using a catalyst and at temperatures as low as 400°C is presented. Such a simplified fabrication procedure results in improved field emission performance from the array compared with previous vacuum microelectronic devices. Typical prototype devices have turn-on gate voltages as low as 169 V to give emission current densities of 10 μA/cm2 at the anode. The ratio of anode current to cathode current reaches ~0.85, and the maximum change in emission current density per volt is 1 μA/cm2. Electron emission from the arrays is stable and reproducible under either pulsed or direct current fields. These characteristics indicate that microgate-controlled CuO nanowire emitters may find application in practical devices.     

Experimental realization of a one-atom laser in the regime of strong coupling

Conventional lasers (from table-top systems to microscopic devices) typically operate in the so-called weak-coupling regime, involving large numbers of atoms and photons; individual quanta have a negligible impact on the system dynamics. However, this is no longer the case when the system approaches the regime of strong coupling for which the number of atoms and photons can become quite small. Indeed, the lasing properties of a single atom in a resonant cavity have been extensively investigated theoretically. Here we report the experimental realization of a one-atom laser operated in the regime of strong coupling. We exploit recent advances in cavity quantum electrodynamics that allow one atom to be isolated in an optical cavity in a regime for which one photon is sufficient to saturate the atomic transition. The observed characteristics of the atom-cavity system are qualitatively different from those of the familiar many-atom case. Specifically, our measurements of the intracavity photon number versus pump intensity indicate that there is no threshold for lasing, and we infer that the output flux from the cavity mode exceeds that from atomic fluorescence by more than tenfold. Observations of the second-order intensity correlation function demonstrate that our one-atom laser generates manifestly quantum (nonclassical) light, typified by photon anti-bunching and sub-poissonian photon statistics.     

量子点半导体光放大器的自发辐射特性研究

从导带、价带和浸润层的能级跃迁出发,采用分段模型对量子点半导体光放大器的增益和自发辐射进行了数值研究．物理模型包括自发辐射行波方程和各能级栽流子与光子数速率方程．经过大量数值计算,得到基态电子占用概率随注入光脉冲的变化,以及增益动态过程（饱和与恢复）和输出光脉冲的时域波形畸变．进一步研究了量子点光放大器自发辐射谱和增益平坦性,结果表明自发辐射功率随输入信号功率增大而减小,引入合适的钳制光,可在20nm带宽内获得小于0．3dB的增益平坦度,或者40nm带宽内小于1．0dB．     

Ultra-broadband semiconductor laser

The fundamental mechanism behind laser action leads in general only to narrowband, single-wavelength emission. Several approaches for achieving spectrally broadband laser action have been put forward, such as enhancing the optical feedback in the wings of the gain spectrum, multi-peaked gain spectra, and the most favoured technique at present, ultrashort pulse excitation. Each of these approaches has drawbacks, such as a complex external laser cavity configuration, a non-flat optical gain envelope function, or an inability to operate in continuous mode, respectively. Here we present a monolithic, mid-infrared 'supercontinuum' semiconductor laser that has none of these drawbacks. We adopt a quantum cascade configuration, where a number of dissimilar intersubband optical transitions are made to cooperate in order to provide broadband optical gain from 5 to 8 microm wavelength. Laser action with a Fabry-Pérot spectrum covering all wavelengths from 6 to 8 microm simultaneously is demonstrated with this approach. Lasers that emit light over such an extremely wide wavelength range are of interest for applications as varied as terabit optical data communications or ultra-precision metrology and spectroscopy.     

Sensitivity gains in chemosensing by lasing action in organic polymers

Societal needs for greater security require dramatic improvements in the sensitivity of chemical and biological sensors. To meet this challenge, increasing emphasis in analytical science has been directed towards materials and devices having highly nonlinear characteristics; semiconducting organic polymers (SOPs), with their facile excited state (exciton) transport, are prime examples of amplifying materials. SOPs have also been recognized as promising lasing materials, although the susceptibility of these materials to optical damage has thus far limited applications. Here we report that attenuated lasing in optically pumped SOP thin films displays a sensitivity to vapours of explosives more than 30 times higher than is observed from spontaneous emission. Critical to this achievement was the development of a transducing polymer with high thin-film quantum yield, a high optical damage threshold in ambient atmosphere and a record low lasing threshold. Trace vapours of the explosives 2,4,6-trinitrotoluene (TNT) and 2,4-dinitrotoluene (DNT) introduce non-radiative deactivation pathways that compete with stimulated emission. We demonstrate that the induced cessation of the lasing action, and associated sensitivity enhancement, is most pronounced when films are pumped at intensities near their lasing threshold. The combined gains from amplifying materials and lasing promise to deliver sensors that can detect explosives with unparalleled sensitivity.     

Measurement of the internal state of a single atom without energy exchange

A measurement necessarily changes the quantum state being measured, a phenomenon known as back-action. Real measurements, however, almost always cause a much stronger back-action than is required by the laws of quantum mechanics. Quantum non-demolition measurements have been devised that keep the additional back-action entirely within observables other than the one being measured. However, this back-action on other observables often imposes its own constraints. In particular, free-space optical detection methods for single atoms and ions (such as the shelving technique, a sensitive and well-developed method) inevitably require spontaneous scattering, even in the dispersive regime. This causes irreversible energy exchange (heating), which is a limitation in atom-based quantum information processing, where it obviates straightforward reuse of the qubit. No such energy exchange is required by quantum mechanics. Here we experimentally demonstrate optical detection of an atomic qubit with significantly less than one spontaneous scattering event. We measure the transmission and reflection of an optical cavity containing the atom. In addition to the qubit detection itself, we quantitatively measure how much spontaneous scattering has occurred. This allows us to relate the information gained to the amount of spontaneous emission, and we obtain a detection error below 10 per cent while scattering less than 0.2 photons on average. Furthermore, we perform a quantum Zeno-type experiment to quantify the measurement back-action, and find that every incident photon leads to an almost complete state collapse. Together, these results constitute a full experimental characterization of a quantum measurement in the 'energy exchange-free' regime below a single spontaneous emission event. Besides its fundamental interest, this approach could significantly simplify proposed neutral-atom quantum computation schemes, and may enable sensitive detection of molecules and atoms lacking closed transitions.     

A steady-state superradiant laser with less than one intracavity photon

The spectral purity of an oscillator is central to many applications, such as detecting gravity waves, defining the second, ground-state cooling and quantum manipulation of nanomechanical objects, and quantum computation. Recent proposals suggest that laser oscillators which use very narrow optical transitions in atoms can be orders of magnitude more spectrally pure than present lasers. Lasers of this high spectral purity are predicted to operate deep in the 'bad-cavity', or superradiant, regime, where the bare atomic linewidth is much less than the cavity linewidth. Here we demonstrate a Raman superradiant laser source in which spontaneous synchronization of more than one million rubidium-87 atomic dipoles is continuously sustained by less than 0.2 photons on average inside the optical cavity. By operating at low intracavity photon number, we demonstrate isolation of the collective atomic dipole from the environment by a factor of more than ten thousand, as characterized by cavity frequency pulling measurements. The emitted light has a frequency linewidth, measured relative to the Raman dressing laser, that is less than that of single-particle decoherence linewidths and more than ten thousand times less than the quantum linewidth limit typically applied to 'good-cavity' optical lasers, for which the cavity linewidth is much less than the atomic linewidth. These results demonstrate several key predictions for future superradiant lasers, which could be used to improve the stability of passive atomic clocks and which may lead to new searches for physics beyond the standard model.