High-temperature interface superconductivity between metallic and insulating copper oxides

The realization of high-transition-temperature (high-T(c)) superconductivity confined to nanometre-sized interfaces has been a long-standing goal because of potential applications and the opportunity to study quantum phenomena in reduced dimensions. This has been, however, a challenging target: in conventional metals, the high electron density restricts interface effects (such as carrier depletion or accumulation) to a region much narrower than the coherence length, which is the scale necessary for superconductivity to occur. By contrast, in copper oxides the carrier density is low whereas T(c) is high and the coherence length very short, which provides an opportunity-but at a price: the interface must be atomically perfect. Here we report superconductivity in bilayers consisting of an insulator (La(2)CuO(4)) and a metal (La(1.55)Sr(0.45)CuO(4)), neither of which is superconducting in isolation. In these bilayers, T(c) is either approximately 15 K or approximately 30 K, depending on the layering sequence. This highly robust phenomenon is confined within 2-3 nm of the interface. If such a bilayer is exposed to ozone, T(c) exceeds 50 K, and this enhanced superconductivity is also shown to originate from an interface layer about 1-2 unit cells thick. Enhancement of T(c) in bilayer systems was observed previously but the essential role of the interface was not recognized at the time.     

离子液体调控超导研究

载流子在超导材料中扮演关键角色,其浓度调控对研究超导特性及相关量子器件至关重要.然而载流子浓度通常与其他自由度相互耦合,难以做到单一物理量变化,例如,化学掺杂同时会导致晶格等发生变化.最近迅速发展的离子液体调控技术,兼具了传统的化学掺杂和场效应晶体管优点——大范围、原位、可逆地调节载流子浓度.随着这项技术的发展,逐渐演变出两类调控思路:静电场效应和电化学调控.本文从这两个方面,回顾了离子液体调控在诱导新奇超导态和调控高温超导薄膜物性上的应用:静电场效应对绝缘或半导体体系十分有效,而对于本身载流子浓度较高的材料(如高温超导体等),电化学调控则发挥了重要作用.离子液体因其强大的原位调控能力和易于与其他手段结合的特点,正逐渐成为超导研究中不可或缺的手段,在构建精确相图、突破高温超导机理等方面发挥不可替代的作用.     

Coexistence of superconductivity and ferromagnetism in the d-band metal ZrZn2.

It has generally been believed that, within the context of the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity, the conduction electrons in a metal cannot be both ferromagnetically ordered and superconducting. Even when the superconductivity has been interpreted as arising from magnetic mediation of the paired electrons, it was thought that the superconducting state occurs in the paramagnetic phase. Here we report the observation of superconductivity in the ferromagnetically ordered phase of the d-electron compound ZrZn2. The specific heat anomaly associated with the superconducting transition in this material appears to be absent, and the superconducting state is very sensitive to defects, occurring only in very pure samples. Under hydrostatic pressure superconductivity and ferromagnetism disappear at the same pressure, so the ferromagnetic state appears to be a prerequisite for superconductivity. When combined with the recent observation of superconductivity in UGe2 (ref. 4), our results suggest that metallic ferromagnets may universally become superconducting when the magnetization is small.     

Signature of optimal doping in Hall-effect measurements on a high-temperature superconductor

High-temperature superconductivity is achieved by doping copper oxide insulators with charge carriers. The density of carriers in conducting materials can be determined from measurements of the Hall voltage--the voltage transverse to the flow of the electrical current that is proportional to an applied magnetic field. In common metals, this proportionality (the Hall coefficient) is robustly temperature independent. This is in marked contrast to the behaviour seen in high-temperature superconductors when in the 'normal' (resistive) state; the departure from expected behaviour is a key signature of the unconventional nature of the normal state, the origin of which remains a central controversy in condensed matter physics. Here we report the evolution of the low-temperature Hall coefficient in the normal state as the carrier density is increased, from the onset of superconductivity and beyond (where superconductivity has been suppressed by a magnetic field). Surprisingly, the Hall coefficient does not vary monotonically with doping but rather exhibits a sharp change at the optimal doping level for superconductivity. This observation supports the idea that two competing ground states underlie the high-temperature superconducting phase.     

Superconductivity in diamond

Diamond is an electrical insulator well known for its exceptional hardness. It also conducts heat even more effectively than copper, and can withstand very high electric fields. With these physical properties, diamond is attractive for electronic applications, particularly when charge carriers are introduced (by chemical doping) into the system. Boron has one less electron than carbon and, because of its small atomic radius, boron is relatively easily incorporated into diamond; as boron acts as a charge acceptor, the resulting diamond is effectively hole-doped. Here we report the discovery of superconductivity in boron-doped diamond synthesized at high pressure (nearly 100,000 atmospheres) and temperature (2,500-2,800 K). Electrical resistivity, magnetic susceptibility, specific heat and field-dependent resistance measurements show that boron-doped diamond is a bulk, type-II superconductor below the superconducting transition temperature T(c) approximately 4 K; superconductivity survives in a magnetic field up to Hc2(0) > or = 3.5 T. The discovery of superconductivity in diamond-structured carbon suggests that Si and Ge, which also form in the diamond structure, may similarly exhibit superconductivity under the appropriate conditions.     

Resonance as a measure of pairing correlations in the high-Tc superconductor YBa2Cu3O6.6

One of the most striking properties of the high-transition-temperature (high-Tc) superconductors is that they are all derived from insulating antiferromagnetic parent compounds. The intimate relationship between magnetism and superconductivity in these copper oxide materials has intrigued researchers from the outset, because it does not exist in conventional superconductors. Evidence for this link comes from neutron-scattering experiments that show the unambiguous presence of short-range antiferromagnetic correlations (excitations) in the high-Tc superconductors. Even so, the role of such excitations in the pairing mechanism for superconductivity is still a subject of controversy. For YBa2Cu3O(6+x), where x controls the hole-doping level, the most prominent feature in the magnetic excitation spectrum is a sharp resonance (refs 6-11). Here we show that for underdoped YBa2Cu3O6.6, where x and Tc are below their optimal values, modest magnetic fields suppress the resonance significantly, much more so for fields approximately perpendicular to the CuO2 planes than for parallel fields. Our results indicate that the resonance measures pairing and phase coherence, suggesting that magnetism plays an important role in high-Tc superconductivity. The persistence of a field effect above Tc favours mechanisms in which the superconducting electron pairs are pre-formed in the normal state of underdoped copper oxide superconductors, awaiting transition to the superconducting state.     

Interplay of magnetism and high-Tc superconductivity at individual Ni impurity atoms in Bi2Sr2CaCu2O8+delta.

Magnetic interactions and magnetic impurities are destructive to superconductivity in conventional superconductors. By contrast, in some unconventional macroscopic quantum systems (such as superfluid 3He and superconducting UGe2), the superconductivity (or superfluidity) is actually mediated by magnetic interactions. A magnetic mechanism has also been proposed for high-temperature superconductivity. Within this context, the fact that magnetic Ni impurity atoms have a weaker effect on superconductivity than non-magnetic Zn atoms in the high-Tc superconductors has been put forward as evidence supporting a magnetic mechanism. Here we use scanning tunnelling microscopy to determine directly the influence of individual Ni atoms on the local electronic structure of Bi2Sr2CaCu2O8+delta. At each Ni site we observe two d-wave impurity states of apparently opposite spin polarization, whose existence indicates that Ni retains a magnetic moment in the superconducting state. However, analysis of the impurity-state energies shows that quasiparticle scattering at Ni is predominantly non-magnetic. Furthermore, we show that the superconducting energy gap and correlations are unimpaired at Ni. This is in strong contrast to the effects of non-magnetic Zn impurities, which locally destroy superconductivity. These results are consistent with predictions for impurity atom phenomena derived from a magnetic mechanism.     

The origin of multiple superconducting gaps in MgB2

Magnesium diboride, MgB2, has the highest transition temperature (T(c) = 39 K) of the known metallic superconductors. Whether the anomalously high T(c) can be described within the conventional BCS (Bardeen-Cooper-Schrieffer) framework has been debated. The key to understanding superconductivity lies with the 'superconducting energy gap' associated with the formation of the superconducting pairs. Recently, the existence of two kinds of superconducting gaps in MgB2 has been suggested by several experiments; this is in contrast to both conventional and high-T(c) superconductors. A clear demonstration of two gaps has not yet been made because the previous experiments lacked the ability to resolve the momentum of the superconducting electrons. Here we report direct experimental evidence for the two-band superconductivity in MgB2, by separately observing the superconducting gaps of the sigma and pi bands (as well as a surface band). The gaps have distinctly different sizes, which unambiguously establishes MgB2 as a two-gap superconductor.     

添加剂对电泳法制备YBa2Cu3O7-δ超导涂层的影响

第二代高温超导带材YBa2Cu3O7-δ(YBCO)具有高载流能力、高不可逆场、低交流损耗和高转变温度,成为当前的热点研究对象.采用低成本的电泳沉积技术在Hastelloy合金上成功制备了YBCO超导层.添加剂对电泳液的稳定性及涂层性能有着重要影响.实验研究了添加剂(种类选择及添加量)与YBCO超导层的关系.结果表明,添加005gPVB时所制备的样品具有较好的超导电性,其临界电流密度可达100A/cm2(0T,77K).     

Hidden magnetism and quantum criticality in the heavy fermion superconductor CeRhIn5

With only a few exceptions that are well understood, conventional superconductivity does not coexist with long-range magnetic order (for example, ref. 1). Unconventional superconductivity, on the other hand, develops near a phase boundary separating magnetically ordered and magnetically disordered phases. A maximum in the superconducting transition temperature T(c) develops where this boundary extrapolates to zero Kelvin, suggesting that fluctuations associated with this magnetic quantum-critical point are essential for unconventional superconductivity. Invariably, though, unconventional superconductivity masks the magnetic phase boundary when T < T(c), preventing proof of a magnetic quantum-critical point. Here we report specific-heat measurements of the pressure-tuned unconventional superconductor CeRhIn5 in which we find a line of quantum-phase transitions induced inside the superconducting state by an applied magnetic field. This quantum-critical line separates a phase of coexisting antiferromagnetism and superconductivity from a purely unconventional superconducting phase, and terminates at a quantum tetracritical point where the magnetic field completely suppresses superconductivity. The T --> 0 K magnetic field-pressure phase diagram of CeRhIn5 is well described with a theoretical model developed to explain field-induced magnetism in the high-T(c) copper oxides, but in which a clear delineation of quantum-phase boundaries has not been possible. These experiments establish a common relationship among hidden magnetism, quantum criticality and unconventional superconductivity in copper oxides and heavy-electron systems such as CeRhIn5.     

Tuning charge transport in solution-sheared organic semiconductors using lattice strain

Circuits based on organic semiconductors are being actively explored for flexible, transparent and low-cost electronic applications. But to realize such applications, the charge carrier mobilities of solution-processed organic semiconductors must be improved. For inorganic semiconductors, a general method of increasing charge carrier mobility is to introduce strain within the crystal lattice. Here we describe a solution-processing technique for organic semiconductors in which lattice strain is used to increase charge carrier mobilities by introducing greater electron orbital overlap between the component molecules. For organic semiconductors, the spacing between cofacially stacked, conjugated backbones (the π-π stacking distance) greatly influences electron orbital overlap and therefore mobility. Using our method to incrementally introduce lattice strain, we alter the π-π stacking distance of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) from 3.33?? to 3.08??. We believe that 3.08?? is the shortest π-π stacking distance that has been achieved in an organic semiconductor crystal lattice (although a π-π distance of 3.04?? has been achieved through intramolecular bonding). The positive charge carrier (hole) mobility in TIPS-pentacene transistors increased from 0.8?cm(2)?V(-1)?s(-1) for unstrained films to a high mobility of 4.6?cm(2)?V(-1)?s(-1) for a strained film. Using solution processing to modify molecular packing through lattice strain should aid the development of high-performance, low-cost organic semiconducting devices.     

A BCS-like gap in the superconductor SmFeAsO0.85F0.15

Since the discovery of superconductivity in the high-transition-temperature (high-T(c)) copper oxides two decades ago, it has been firmly established that the CuO(2) plane is essential for superconductivity and gives rise to a host of other very unusual properties. A new family of superconductors with the general composition of LaFeAsO(1-x)F(x) has recently been discovered and the conspicuous lack of the CuO(2) planes raises the tantalizing question of a different pairing mechanism in these oxypnictides. The superconducting gap (its magnitude, structure, and temperature dependence) is intimately related to pairing. Here we report the observation of a single gap in the superconductor SmFeAsO(0.85)F(0.15) with T(c) = 42 K as measured by Andreev spectroscopy. The gap value of 2Delta = 13.34 +/- 0.3 meV gives 2Delta/k(B)T(c) = 3.68 (where k(B) is the Boltzmann constant), close to the Bardeen-Cooper-Schrieffer (BCS) prediction of 3.53. The gap decreases with temperature and vanishes at T(c) in a manner consistent with the BCS prediction, but dramatically different from that of the pseudogap behaviour in the copper oxide superconductors. Our results clearly indicate a nodeless gap order parameter, which is nearly isotropic in size across different sections of the Fermi surface, and are not compatible with models involving antiferromagnetic fluctuations, strong correlations, the t-J model, and the like, originally designed for the high-T(c) copper oxides.     

Coexistence of superconductivity and ferromagnetism in URhGe

The discovery of superconductivity at high pressure (albeit over a restricted range) in the ferromagnetic material UGe2 raised the possibility that bulk superconductivity might be found in other ferromagnets. The exact symmetry of the paired state and the dominant mechanism responsible for the pairing, however, remain unidentified. Meanwhile, the conjecture that superconductivity could occur more generally in ferromagnets has been fuelled by the recent observation of a low-temperature transition that suggests an onset of superconductivity in high-quality crystals of the itinerant-ferromagnet ZrZn2 (ref. 2), although the thermodynamic signature of this transition could not be detected. Here we show that the ferromagnet URhGe is superconducting at ambient pressure. In this case, we find the thermodynamic signature of the transition-its form is consistent with a superconducting pairing of a spin-triplet type, although further testing with cleaner samples is needed to confirm this. The combination of superconductivity and ferromagnetism may thus be more common and consequently more important than hitherto realized.     

Mg1-xNaxB2化合物的结构和超导特性（英文）

报道了Mg1-xNaxB2化合物的结构和超导特性.块状样品的X射线衍射结果表明样品具有六边形的晶态结构.由于镁粉的化学活性,X射线衍射检测到了少量的MgO杂相.磁测量结果表明非化学计量比的MgB2并没有影响到超导的转变温度及转变温度的宽度.同时,钠的引入几乎没有影响到超导体转变温度.     

Loss of superconductivity with the addition of Al to MgB2 and a structural transition in Mg1-x AlxB2

The basic magnetic and electronic properties of most binary compounds have been well known for decades. The recent discovery of superconductivity at 39 K in the simple binary ceramic compound magnesium diboride, MgB2, was therefore surprising. Indeed, this material has been known and structurally characterized since the mid 1950s (ref. 2), and is readily available from chemical suppliers (it is commonly used as a starting material for chemical metathesis reactions). Here we show that the addition of electrons to MgB2, through partial substitution of Al for Mg, results in the loss of superconductivity. Associated with the Al substitution is a subtle but distinct structural transition, reflected in the partial collapse of the spacing between boron layers near an Al content of 10 per cent. This indicates that superconducting MgB2 is poised very near a structural instability at slightly higher electron concentrations.     

High critical current density and enhanced irreversibility field in superconducting MgB2 thin films

The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. This compound has twice the transition temperature of Nb3Sn and four times that of Nb-Ti alloy, and the vital prerequisite of strongly linked current flow has already been demonstrated. One possible drawback, however, is that the magnetic field at which superconductivity is destroyed is modest. Furthermore, the field which limits the range of practical applications-the irreversibility field H*(T)-is approximately 7 T at liquid helium temperature (4.2 K), significantly lower than about 10 T for Nb-Ti (ref. 6) and approximately 20 T for Nb3Sn (ref. 7). Here we show that MgB2 thin films that are alloyed with oxygen can exhibit a much steeper temperature dependence of H*(T) than is observed in bulk materials, yielding an H* value at 4.2 K greater than 14 T. In addition, very high critical current densities at 4.2 K are achieved: 1 MA cm-2 at 1 T and 105 A cm-2 at 10 T. These results demonstrate that MgB2 has potential for high-field superconducting applications.     

Re-emerging superconductivity at 48 kelvin in iron chalcogenides

Pressure has an essential role in the production and control of superconductivity in iron-based superconductors. Substitution of a large cation by a smaller rare-earth ion to simulate the pressure effect has raised the superconducting transition temperature T(c) to a record high of 55?K in these materials. In the same way as T(c) exhibits a bell-shaped curve of dependence on chemical doping, pressure-tuned T(c) typically drops monotonically after passing the optimal pressure. Here we report that in the superconducting iron chalcogenides, a second superconducting phase suddenly re-emerges above 11.5?GPa, after the T(c) drops from the first maximum of 32?K at 1?GPa. The T(c) of the re-emerging superconducting phase is considerably higher than the first maximum, reaching 48.0-48.7?K for Tl(0.6)Rb(0.4)Fe(1.67)Se(2), K(0.8)Fe(1.7)Se(2) and K(0.8)Fe(1.78)Se(2).     

Superconductor-insulator transition in La2 - xSrxCuO4 at the pair quantum resistance

High-temperature superconductivity in copper oxides arises when a parent insulator compound is doped beyond some critical concentration; what exactly happens at this superconductor-insulator transition is a key open question. The cleanest approach is to tune the carrier density using the electric field effect; for example, it was learned in this way that weak electron localization transforms superconducting SrTiO(3) into a Fermi-glass insulator. But in the copper oxides this has been a long-standing technical challenge, because perfect ultrathin films and huge local fields (>10(9)?V?m(-1)) are needed. Recently, such fields have been obtained using electrolytes or ionic liquids in the electric double-layer transistor configuration. Here we report synthesis of epitaxial films of La(2-?x)Sr(x)CuO(4) that are one unit cell thick, and fabrication of double-layer transistors. Very large fields and induced changes in surface carrier density enable shifts in the critical temperature by up to 30?K. Hundreds of resistance versus temperature and carrier density curves were recorded and shown to collapse onto a single function, as predicted for a two-dimensional superconductor-insulator transition. The observed critical resistance is precisely the quantum resistance for pairs, R(Q) = h/(2e) = 6.45?kΩ, suggestive of a phase transition driven by quantum phase fluctuations, and Cooper pair (de)localization.     

General observation of n-type field-effect behaviour in organic semiconductors

Organic semiconductors have been the subject of active research for over a decade now, with applications emerging in light-emitting displays and printable electronic circuits. One characteristic feature of these materials is the strong trapping of electrons but not holes: organic field-effect transistors (FETs) typically show p-type, but not n-type, conduction even with the appropriate low-work-function electrodes, except for a few special high-electron-affinity or low-bandgap organic semiconductors. Here we demonstrate that the use of an appropriate hydroxyl-free gate dielectric--such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)--can yield n-channel FET conduction in most conjugated polymers. The FET electron mobilities thus obtained reveal that electrons are considerably more mobile in these materials than previously thought. Electron mobilities of the order of 10(-3) to 10(-2) cm(2) V(-1) s(-1) have been measured in a number of polyfluorene copolymers and in a dialkyl-substituted poly(p-phenylenevinylene), all in the unaligned state. We further show that the reason why n-type behaviour has previously been so elusive is the trapping of electrons at the semiconductor-dielectric interface by hydroxyl groups, present in the form of silanols in the case of the commonly used SiO2 dielectric. These findings should therefore open up new opportunities for organic complementary metal-oxide semiconductor (CMOS) circuits, in which both p-type and n-type behaviours are harnessed.