弛豫铁电单晶铌镁酸铅-钛酸铅的工程畴结构研究

综述了目前对铁电晶体畴结构进行观测的主要技术方法,及国内外相关研究单位对新型弛豫铁电单晶铌镁酸铅-钛酸铅[(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMN-xPT)]的工程畴结构的研究进展。以往的研究表明,该类单晶的机电性能与其工程畴结构之间存在着密不可分的关系,这些研究结果对阐明PMN-xPT单晶在不同极化方向与工程畴结构状态下,其优异机电性能的起源机制与发生规律,进而指导剪切波换能器、垂直极化方向的大应变驱动器等电机器件的设计与制作,具有重要的理论意义与实际应用价值。     

铌镁(锌)酸铅-钛酸铅弛豫铁电单晶研究进展

在最近十几年中,新型弛豫型铁电单晶铌镁酸铅-钛酸铅和铌锌酸铅-钛酸铅受到了广泛的关注。这是由于这种新型的弛豫型铁电单晶和传统的压电材料相比较,在准同型相界附近表现出良好的压电、介电与电致伸缩性能。文章介绍了铌镁(锌)酸铅-钛酸铅系列单晶的基本性质,国内外在该晶体制备及晶体性能相关领域的研究进展。     

铌酸铅钡铁电单晶的生长和物理性质

本工作首次由熔体中用提拉法生长出完整的Pb_xBa_(1-x)Nb_2O_6(铌酸铅钡)大块铁电单晶,并对单晶的物理性质作了研究和测量.研究表明,当x=0.37时,晶体室温下属于点群4mm对称性,呈铁电相.居里温度T_c=260℃.室温下,相对介电常数ε_(11)~T/ε_0=600,ε_(33)~T/ε_0=130,压电系数d33=44×10~(-12)库仑/牛顿,热释电系数p=9×10~(-5)库仑/米~2·K.用腐蚀c-切片的方法由扫描电子显微观察到单晶的方形铁由畴结构花样     

新型铅卤基钙钛矿材料及其应用

铅卤基钙钛矿材料因其优异的光电转化效率、可调禁带宽度、较高载流子迁移率、较大光吸收系数等突出性能,在太阳能电池、发光器件和光电探测等领域获得广泛关注。介绍了铅卤基钙钛矿薄膜、量子点和单晶的制备和相关物理性能,总结了其在太阳能电池、发光二极管(LED)、光电探测器等领域的最新研究进展,讨论了目前存在的问题及未来发展前景。     

多铁磁电复合材料—功能材料领域的闪亮新星

在功能材料研究领域,人工复合的多铁磁电材料因具有室温环境下特殊的磁电性能——铁电有序和铁磁有序共存及"磁-力-电"转换特性(磁电耦合效应),在磁传感器、换能器、微波器件、存储器等方面有着十分诱人的实用价值与应用前景。本文在回顾多铁磁电复合材料背景知识的基础上,重点介绍磁电复合材料磁电耦合机理、设计原理、制备方法与研究现状、理论分析方法与磁电效应表征方法相关内容,最后总结、展望多铁磁电复合材料未来研究中的一些重要问题。     

PMN基电致伸缩材料

试验以PMN基弛豫铁电体为基础,通过掺杂和优化工艺,研制出性能优异的电致伸缩材料(1-y)［(1-x)PMN-xPT］-yWO     

水声换能器发展中的技术创新

从功能材料和结构工艺两个角度对水声换能器的发展历程和技术创新进行综述。在功能材料方面,主要介绍了采用磁致伸缩材料和压电单晶对换能器设计和性能的影响。在结构和工艺方面,分别从改善波束特性、改善频率特性、提高发射声功率、增大耐静水压能力4个方面对换能器的结构和工艺设计进行分析。针对一些典型的换能器,如:低频换能器、宽带换能器、特殊波束换能器、大功率换能器以及深水换能器等,指出了被广泛接受的新概念与新设计,这些设计方法虽基于水声换能器,却可为更广泛领域的换能器设计提供借鉴思路。     

基于PZT薄膜的高频压电式微机械超声换能器的仿真与制备

压电式微机械超声换能器(PMUT)是当前生物医学超声成像领域的研究热点.锆钛酸铅(PbZrO₃-PbTiO₃,PZT)压电薄膜是近年来微机械超声换能器使用的核心压电材料.基于PZT压电薄膜,使用有限元软件COMSOL Multiphysics创建了三维有限元仿真模型,并在(0,1)模态下研究了压电薄膜结构的几何参数,其谐振频率达到22.12 MHz,有效机电耦合系数(k_eff²)为5.13%.采用光刻和刻蚀方法制备了PZT压电薄膜的PMUT单元原型器件.该器件的空腔结构完整,谐振频率在(0,1)模态下为25.87 MHz,仿真与测试结果相似,振动模态较纯,振动位移性能较好.研究结果表明:采用PZT压电薄膜的PMUT在高分辨率、高频医学超声成像中具有较好的应用前景.     

铌镁酸铅类钙钛矿结构铁电多晶体的制备技术

铌镁酸铅(PMN)类化合物是一类弱铁电特性的ABO_3型复合钙钛矿结构铁电弛豫体。利用在A/B位固溶外来离子(例如,Sr、Ba和Ti等)的原理,改变该类化合物基固溶体的电负性差值φ和加权结构容差因子t值,达到合成全钙钛矿结构相的目的。根据电负性差值理论和钙钛矿结构容差因子理论,本文提出了铌镁酸铅类化合物钙钛矿结构相稳定性优值参数M的新概念。基于M值定义和PZN基固熔体的实验数据,推算出钙钛矿结构相稳定性临介优值Mc=1.67,并用以设计和优选PMN和PZN基多晶体最佳配方,优化材料性能。同时研究了钙钛矿结构相合成程度与MnO_2添加量和Mg偏离化学计量比程度的关系。研制出性能稳定、特性优良的新材料。     

Ba1-xSrxTiO3(BST)/钙钛矿型氧化物超导薄膜异质结构的研究及发展

钛酸锶钡(Ba1-xSrxTiO3(BST))铁电薄膜材料在集成铁电器件领域具有很大的优势和潜力,BST与铂(Pt)等贵金属电极材料的界面特性限制了BST的实际应用,氧化物超导薄膜代替贵金属材料做底部电极取得了不少突破性的进展,综述了国内外研究人员对Ba1-xSrxTiO3(BST)/钙钛矿型氧化物超导薄膜异质结构和基本介电性能等方面的研究及成果。     

Ferroelectric and piezoelectric properties of novel relaxor ferroelectric single crystals PMNT

Relaxor ferroelectric single crystals PMNT with the size of 40 mm×80 mm have been grown by a modified Bridgman method and their ferroelectric and piezoelectric properties have been characterized.The properties varied with the compositions and cut types.On the (001) cut,PMNT76/24 single crystals exhibited a dielectric constant of about 3 400,a dielectric loss of tan＜0.7%,a piezoelectric constant d33 of 980 pC/N,an electromechanical coupling factor kt of 0.55 and Tc of about 110℃.Whereas the properties of PMNT67/33 single crystals on (001) cut were better: ε of about 5 300,tanδ＜0.6%,d33 up to 3 000 pC/N,kt 0.64,k33 0.93 and Tc of about 150℃.The piezoelectric properties on other cuts such as (110) and (111) were much lower than those on the (001) cut.The rhombohedral PMNT crystals grown by this method showed more excellent piezoelectric properties than those grown by high temperature solution method and higher value of kt than the rhombohedral PZNT single crystals.It has also been found that the fluctuation in ferroelectric and piezoelectric properties was related to such factors as composition uniformity and poling degree.     

Structural phase transition, optical and pyroelectric properties of lead-free single crystals

0.14 at% Mn-doped 0.95(Na_1/2Bi_1/2)TiO₃-0.05BaTiO₃ (0.95NBT-0.05BT) lead-free single crystals were grown by a top-seeded solution growth method (TSSG). X-ray powder diffraction measurement showed that the as-grown single crystals exhibit rhombohedral perovskite structure with apparent distortion. With the increase of temperature, successive structural phase transitions occur in the Mn-doped 0.95NBT-0.05BT single crystals. After poling, apparent dielectric anomaly is induced accompanied by the increase of the character of diffuse phase transition and the decrease of the value of dielectric constant. The Mn-doped 0.95NBT-0.05BT single crystals exhibit complex domain structure, in which micro and macro domains coexist with statistically 4 mm symmetry. The Mn-doped 0.95NBT-0.05BT lead-free single crystals exhibit excellent piezoelectric and pyroelectric properties, which will lead to promising advance in piezoelectric and pyroelectric applications. The infrared-absorption band occurred around 630.6 cm^?1 can be assigned to the “stretching” normal vibration of [Na_1/2Bi_1/2]/Ti-O group. The three diffused Raman bands centered around 300, 560 and 800 cm^?1 can be attributed to F2g [TiO₆] bending vibration, A1g [TiO₆] stretching vibration and “soft mode” mixed by bending and stretching vibrations.     

The giant electromechanical response in ferroelectric relaxors as a critical phenomenon

The direct conversion of electrical energy to mechanical work by a material is relevant to a number of applications. This is illustrated by ferroelectric 'relaxors' such as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT; refs 5, 6): these materials exhibit a giant electromechanical (piezoelectric) response that is finding use in ultrasonic and medical applications, as well as in telecommunications. The origins of this effect are, however, still unclear. Here we show that the giant electromechanical response in PMN-PT (and potentially other ferroelectric relaxors) is the manifestation of critical points that define a line in the phase diagram of this system. Specifically, in the electric-field-temperature-composition phase diagram of PMN-PT (the composition being varied by changing the PT concentration), a first-order paraelectric-ferroelectric phase transition terminates in a line of critical points where the piezoelectric coefficient is maximum. Above this line, supercritical evolution is observed. On approaching the critical point, both the energy cost and the electric field necessary to induce ferroelectric polarization rotations decrease significantly, thus explaining the giant electromechanical response of these relaxors.     

掺铁铌镁酸铅一钛酸铅单晶的光折变效应

采用助溶剂法生长了掺杂量分别为0．1wt％和0．01wt％的0．67PMNT-0．33PT单晶．利用二波耦合实验研究了掺铁的弛豫铁电单晶0．67Pb（Mg1／3Nb2,3）03-0．33PbTi03（PMN．PT）的光折变性能．本文测试了样品的消光光谱、电光系数、光诱吸收电场和光电导．最大的增益系数达到了21cm-1,是无掺杂的PMN-PT晶体的两倍．光栅形成速率随铁浓度的升高而降低．     

{(PhCH2)2Sn[2,6-(O2C)2C5H3N](CH3OH)}2 的合成及结构

合成了七配位二聚体{(PhCH2)2Sn[2，6-(O2C)2C5H3N](CH3OH)}2。通过元素分析、红外光谱和核磁共振氢谱对其结构进行了表征。用X-射线单晶衍射测定了该化合物的晶体结构。化合物中两个锡原子呈七配位畸变五角双锥构型。     

Zr含量对大功率0.125PMN 0.875PZT陶瓷压电性能的影响

采用二次合成法制备不同zr含量（x=0.46～0.52）的0.125 Pb(Mg_1/3Nb_2/3)O₃-0.875PbZr_xTi_1-xO₃（0.125PMN-0.875PZT）三元压电陶瓷。采用x线衍射仪（XRD）、阻抗分析仪等对陶瓷进行表征和性能测试,考察了Zr含量变化对陶瓷烧结相结构、体积密度、介电和压电性能的影响。结果表明:采用二次合成法,制备了纯钙钛矿相结构的陶瓷;当x=0.48～0.50时,0.125PMN-0.875PZT陶瓷处于四方一三方准同型相界（MPB）.在x=0.49时制备的0.125PMN-0.875PZT陶瓷性能最佳,体积密度为7.84 g/cm³,介电损耗低至0.76%,相对介电常数为2 130,压电常数为:320 pC/N,机电耦合系数达0.61,机械品质因数为76。     

Patterning organic single-crystal transistor arrays

Field-effect transistors made of organic single crystals are ideal for studying the charge transport characteristics of organic semiconductor materials. Their outstanding device performance, relative to that of transistors made of organic thin films, makes them also attractive candidates for electronic applications such as active matrix displays and sensor arrays. These applications require minimal cross-talk between neighbouring devices. In the case of thin film systems, simple patterning of the active semiconductor layer minimizes cross-talk. But when using organic single crystals, the only approach currently available for creating arrays of separate devices is manual selection and placing of individual crystals-a process prohibitive for producing devices at high density and with reasonable throughput. In contrast, inorganic crystals have been grown in extended arrays, and efficient and large-area fabrication of silicon crystalline islands with high mobilities for electronic applications has been reported. Here we describe a method for effectively fabricating large arrays of single crystals of a wide range of organic semiconductor materials directly onto transistor source-drain electrodes. We find that film domains of octadecyltriethoxysilane microcontact-printed onto either clean Si/SiO(2) surfaces or flexible plastic provide control over the nucleation of vapour-grown organic single crystals. This allows us to fabricate large arrays of high-performance organic single-crystal field-effect transistors with mobilities as high as 2.4 cm(2) V(-1) s(-1) and on/off ratios greater than 10(7), and devices on flexible substrates that retain their performance after significant bending. These results suggest that our fabrication approach constitutes a promising step that might ultimately allow us to utilize high-performance organic single-crystal field-effect transistors for large-area electronics applications.     

日立H-7650透射电镜的快速调整与操作

现代透射电镜是电镜与计算机结合的产物,由于计算机软件程序对电镜操作的控制,使透射电镜运行的复杂过程简单一键开机、光轴调整、样品观察到三个步骤。H-7650的样品台和成像部分,安装了三维马达驱动和CCD,掌握好H-7650的操作要点,该透射电镜的多项机械和电子光学参数调整,都可以在瞬间自动或手动完成。     

Bottom-up fabrication approaches to novel plasmonic materials

Recent research effort towards developing novel metal nanoparticles (NPs) and their ordered arrays have been motivated by the emergence of plasmonics. In particular, tuning the size, morphology, composition and the separation of metal NPs has allowed us to engineer the collective properties of plasmonic crystals for specific applications. Here we present our recent development of bottom-up growth methods and demonstrate convenience for the preparation of such plasmonic materials. By implementation of physical, chemical, or electrochemical deposition of a metal in combination with micromolding on two-dimensional colloidal crystals, metallic NPs with a variety of morphologies can be created in an ordered lattice. The prepared novel plasmonic crystals could find applications in optics, optoelectronics, materials science, sensing and biophysics.