共查询到20条相似文献，搜索用时 48 毫秒
1.
《四川大学学报(自然科学版)》2019,(5)
硫可以用作生长促进剂制备具有不同形态的碳纳米结构,例如:Y型和海胆状结构,单壁碳纳米管(SWCNTs),双壁碳纳米管薄膜等.此外,研究表明低浓度的硫和低气体流量可实现碳纳米管中高压Fe_7C_3和Fe_5C_2相晶体的填充.然而,碳纳米管中高压相的填充条件以及连续垂直取向的碳纳米管薄膜的合成和形貌控制的条件尚需进一步研究.本文采用化学气相沉积(CVD),使用硫和二茂铁的混合物作为生长促进剂和碳源,在氩(Ar)气环境中将Si/SiO_2基底作为局部生长区域,实现了在碳纳米管内填充碳化铁相,并通过对所得碳结构进行详细表征,揭示填充的碳化物相(Fe_5C_2和Fe_7C_3)之间可能存在结合,这些结果在磁数据存储方面将有潜在应用. 相似文献
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该研究采用Na/Li基催化剂,乙炔为碳源,在600,650℃化学气相沉积碳纳米管阵列。结果表明Na：Li的比例,前躯体的种类和沉积温度对碳纳米管阵列的形貌和取向有较大影响。 相似文献
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采用低压化学气相沉积方法制备碳纳米管薄膜电极,研究碳纳米管薄膜的电容去离子行为.碳纳米管薄膜主要由中孔和部分大孔组成,适合电容去离子应用.详细研究了工作条件（流速、电压）和离子特性对碳纳米管薄膜电容去离子性能的影响.结果表明：电极电压越高,除盐率越高;存在一个最佳流速,此时除盐率最高;离子半径越小,电荷越小的离子,更容易吸附. 相似文献
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金属纳米颗粒和碳纳米管是两种重要的纳米材料。本文采用一个简单的方法合成了铁钴(Fe/Co)纳米颗粒,并采用化学气相沉积法实现了碳纳米管的批量合成,纳米颗粒的尺寸分布均匀,碳纳米管管径均匀、高纯度、结构完美。合成的碳纳米管机械强度高,同时还有独特的金属或半导体导电性。 相似文献
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设计了以Fe3O4修饰的碳纳米管(Fe3O4@CNT)作为硫的载体以提高锂-硫(Li-S)电池的电化学性能.碳纳米管由于具有优越的导电性,可以改善S及其放电产物的电导率,为电子和离子的传输提供高速通道.极性Fe3O4对多硫化物具有强的吸附作用,能够有效抑制Li-S电池中多硫化物的穿梭效应,Fe3O4@CNT/S正极展现... 相似文献
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高纯度单壁碳纳米管的制备与表征 总被引：1，自引：0，他引：1
采用Co/Mo二元金属催化剂,以甲烷为碳源,通过热化学气相沉积法制备出高质量的单壁碳纳米管.分别用FE-SEM、HR-TEM和Ram an光谱对产物进行了表征.通过控制沉积条件,研究了沉积温度、碳源流量和氢气预还原对产物的影响,确定了最佳的制备工艺参数. 相似文献
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以MnCl2为催化剂前体,利用化学气相沉积法合成出了碳纳米管,利用电子显微镜和能量色散X射线谱对样品进行了表征,系统研究了碳纳米管生成的条件。 相似文献
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碳化硅纤维增强碳化硅复合材料(SiCf/SiC)是航空航天和聚变能源等高技术领域理想的高温结构材料,改善纤维与基体的界面结合是提高其力学性能的关键。本文采用化学气相沉积法在纤维表面原位生长碳纳米管,以达到改善纤维与基体的结合同时对复合材料进行二次增强的目的。结果表明,采用碳纳米管增强的SiCf/SiC复合材料的力学性能有不同程度的提高,特别是当碳纳米管的体积分数为5.31%时,复合材料的断裂韧性提高106.3%。纤维表面的碳纳米管层与纤维结合较弱,能够促进纤维的拔出,从而促进复合材料断裂韧性的提高;另外,碳纳米管的拔出对复合断裂韧性的提高也有一定的促进作用。 相似文献
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采用酞菁铁(FePc)作为碳源和催化剂源,利用化学气相沉积(CVD)法在碳纤维纸(CFP)上生长碳纳米管(CNTs),从而制备了碳纳米管/碳纤维纸复合材料,并利用扫描电镜(SEM)测试、X射线衍射(XRD)测试、接触角测试、电导率测试和孔隙率测试等方法对其结构和性能进行了表征.结果表明,碳纳米管能在碳纤维纸表面生长;表面生长碳纳米管后,碳纤维纸的疏水性、孔隙率和电导率均有所提高. 相似文献
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超声波法合成三烷基硼及其裂解制备碳化硼 总被引：2，自引：0，他引：2
在超声波作用下采用一步合成法分别制备三乙基硼、三丙基硼和三丁基硼;考察超声波作用对合成产物产率的影响,用红外光谱及元素分析表征合成产物的结构;以合成的三乙基硼、三丙基硼和三丁基硼为原料通过热裂解制备纯度较高的碳化硼超硬材料;讨论不同原料和裂解温度对合成产物中C含量的影响。研究结果表明以三乙基硼为原料在温度为1400K进行裂解时,其裂解产物中B4C,B2O3和裂解自由碳的含量分别为94.0%,2.2%和3.8%。 相似文献
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本文介绍了微波电子回旋共振等离子体气相沉积装置的磁场设计原理和计算方法,给出了几种电流强度、线圈间距等主要参量下的磁场形态. 相似文献
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S. Karamat C. Ke U.Y. Inkay Rizwan Akram Ilker Yildiz S. Shah Zaman A. Oral 《自然科学进展(英文版)》2016,26(4):422-426
The present paper focuses on study of graphene and strontium titanate(SrTiO_3 or STO) interface. An ambient pressure chemical vapour deposition(AP-CVD) setup is used to grow graphene on STO(110)substrates in the presence of methane, argon and hydrogen gases at 1000 °C for 4 h. Raman spectroscopy measurements confirm the presence of graphene on STO substrates due to the existence of typical D and G peaks referring to graphene. These characteristic peaks are missing in the spectrum for bare substrates.X-ray photoelectron spectroscopy(XPS) is carried out for elemental analysis of samples, and study their bonding with STO substrates. We employed the valence band spectrum to calculate the valence band offset(VBO) and conduction band offset(CBO) at the G-STO interface. Also, we present an energy band diagram for Bi-layer and ABC(arranging pattern of carbon layers) stacked graphene layers. 相似文献
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在垂直冷壁CVD反应器中进行了文题的探索性研究。以二乙胺基钛(Ti(NEt_2)_4)为源,在不锈钢或硬质合金基体上完成了氮化钛(TiN)和碳氮化钛(Ti(C,N))硬质薄膜低温下的淀积。发现(TiN)和(Ti(C,N))分别在773K和973K下形成;在操作范围内整个反应器流场由自由对流控制;反应过程由表面过程控制;反应活化能为235 kJ/mol;二乙胺基钛反应级数为1级。进行了热力学计算,提出了反应历程假设。结果表明:用二乙胺基钛进行MOCVD淀积含钛硬质薄膜可以降低温度,以扩大基体的选用范围,为获得硬质薄膜提供了一条新的途径。 相似文献
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在TiCl_4-C_6H_5CH_3-H_2和TiCl_4-C_6H_5-H_2-N_2体系中,以YG_8硬质合金为基体,用化学气相沉积(CVD)法,研究了温度,反应物输入浓度对沉积TiC和TiC_xN_y涂层的沉积速度,显微硬度和形貌的影响。结果表明:TiC沉积速度,显微硬度随沉积温度升高而增大,对TiC沉积层的形貌也有较大的影响。TiC和TiC_xN_y的沉积速度、显微硬度随反应物摩尔比(m_c/Ti)增加到某一最大值后又下降;m_c/Ti=1时,TiC硬度呈最佳值。m_c/Ti=0.87时,TiC_xN_y硬度出现最大值。此外,还对基体一涂层间是否出现η相进行了分析。并测定了在1223～1323K间TiC沉积反应的表观活化能为157.9kJ/mol。 相似文献
16.
CVD法制备SiO2薄膜工艺条件的研究 总被引：4，自引：1，他引：4
在Al2 O3 陶瓷基片上以正硅酸乙酯 (TEOS)为原料 ,高纯氮气作载气 ,采用低压冷壁式设备和化学气相沉积(CVD)方法制备SiO2 薄膜 ,研究了基片温度、TEOS温度和沉积时间对SiO2 薄膜沉积速率的影响 .采用XRD ,XPS和SEM技术对SiO2 薄膜的组成和结构进行了分析 相似文献
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Carbon nanotubes (CNTs) were in-situ grown in carbon felts using ferric chloride as catalyst and natural gas as carbon precursor via thermal gradient chemical vapor infiltration (TGCVI). Subsequently, the carbon felts were densified to obtain CNT reinforced carbon/carbon (C/C) composites in the same furnace. Effects of CNTs on the microstructure and flexural property of C/C composites were investigated by polarized light microscopy, Raman spectroscopy, scanning electron microscopy and universal mechanical testing machine. The results of PLM observation and Raman analysis showed that CNTs have two-sided effects on the microstructure of pyrocarbon: the pyrocarbons in the region without CNTs show medium texture; while, in the region full of CNTs, the microstructure was low-textured or even isotropic though the TGCVD conditions would lead to the deposition of pure low texture pyrocarbons. Analysis based on stress-strain curves demonstrated that the flexural strength increased first and then decreased with the CNT content increasing. When the CNT content was 5.23 wt%, the flexural strength was maximum and had a nearly 35% improvement compared with pure C/C composite. Besides, after adding CNTs, the flexural modulus of the composites decreased and the ductility increased obviously, indicating CNTs can toughen C/C composites. 相似文献
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本文综述了等离子体化学气相沉积(PCVD)技术的发展现状,并从等离子体对化学气相沉积(CVD)过程的影响出发概述了 PCVD 技术在制备固态涂层或薄膜方面的一些典型应用.最后展望了 PCVD 技术的发展前景. 相似文献
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The present competition of graphene electronics demands an ef fi cient route which produces high quality and large area graphene. Chemical vapour deposition technique, where hydrocarbons dissociate in to active carbon species and form graphene layer on the desired metal catalyst via nucleation is considered as the most suitable method. In this study, single layer graphene with the presence of few layer single crystal graphene grains were grown on Pt foil via chemical vapour deposition. The higher growth temperature changes the surface morphology of the Pt foil so a delicate process of hydrogen bubbling was used to peel off graphene from Pt foil samples with the mechanical support of photoresist and further transferred to Si O2/Si substrates for analysis. Optical microscopy of the graphene transferred samples showed the regions of single layer along with different oriented graphene domains. Two type of interlayer stacking sequences, Bernal and twisted, were observed in the graphene grains.The presence of different stacking sequences in the graphene layers in fl uence the electronic and optical properties; in Bernal stacking the band gap can be tunable and in twisted stacking the overall sheet resistance can be reduced. Grain boundaries of Pt provides low energy sites to the carbon species, therefore the nucleation of grains are more at the boundaries. The stacking order and the number of layers in grains were seen more clearly with scanning electron microscopy. Raman spectroscopy showed high quality graphene samples due to very small D peak. 2D Raman peak for single layer graphene showed full width half maximum(FWHM) value of 30 cm-1. At points A, B and C, Bernal stacked grain showed FWHM values of 51.22, 58.45 and 64.72 cm-1, while twisted stacked grain showed the FWHM values of 27.26, 28.83 and 20.99 cm-1,respectively. FWHM values of 2D peak of Bernal stacked grain showed an increase of 20–30 cm-1 as compare to single layer graphene which showed its dispersive nature and con fi rmed Bernal sequence. On the other hand, the slightest decrease in FWHM values of 2D peak in twisted grain comparing to single layer con fi rmed the twisted sequence of grains. Atomic force microscopy analysis showed an increasing trend in grain height pro fi le with an increase in the number of layers. 相似文献
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