Influence of target-substrate distance and sputtering power on chromium oxide films prepared by medium-frequency magnetron sputtering

Chromium oxide films were deposited on Si (100) substrates by medium-frequency (MF) unbalanced magnetron sputtering at different target-substrate distances D _TS (60, 100, 120 mm) and sputtering power (2.8, 5.6, 11.2 kW), respectively. The structure, surface morphologies, and microhardness of the chromium oxide films were examined by X-ray diffraction (XRD), atomic force microscopy (AFM), and microhardness tester. The results indicate that elevated MF sputtering power can improve the crystallization of the films; The D _TS value affects the structure of the films by changing the preferential orientation from CrO₃ (221) to Cr₂O₃ (116); The microhardness of the chromium oxide films is found to increase with the sputtering power. For preparing the Cr₂O₃-dominated films with comparatively high-performance, the optimized condition is the target-substrate distance of 100 mm and MF sputtering power of 11.2 kW.     

衬底偏压对γ′-Fe4N薄膜磁性的影响

采用直流磁控溅射方法, 以Ar/N₂（N₂/(Ar+N₂)=10％）为放电气体, 在Si(100)单晶衬底上获得了γ′-Fe₄N薄膜样品. 利用X射线衍射(XRD)和振动样品磁强计(VSM)研究衬底偏压对γ′-Fe₄N薄膜样品的影响. 结果表明, 随着衬底负偏压的增大, γ′-Fe₄N薄膜样品的晶胞参数减小, Fe和N的化合效率与样品的致密度提高, 表面缺陷减少, 矫顽力降低.      

I-V andC-V properties of TiO2 thin film by pulsed-laser reactive deposition

TiO-2 thin films have bee deposited on p-Si(111) substrates by pulsed-laser ablation of metallic Ti target in the O-3 ambient. The current-voltage and capacitance-voltage of the Al/TiO-2/Si capacitors are measured. The results show that the dielectric constant of thin film after being annealed at 700℃ is found to be 46, and the border trap density and the interface state density at the TiO-2/p-Si interface are 1.8×10 12 cm -2 and 2×10 12 eV -1·cm -2, respectively. The conduction mechanisms of as-deposited films are also discussed.     

Beneficial clock-rolling cycles on the microstructure uniformity of {111} grains in tantalum sheets

Controlling the texture of tantalum sheets is of critical importance to fabricate good sputtering targets. In the present study two tantalum sheets were produced by clock rolling to 70% thickness reduction in 1 or 2 cycles. The results show that the stored energy and grain subdivision within the {111} grains {<111>//normal direction (ND)} after 1 cycle are significantly higher than those after 2 cycles, leading to fast recrystallization kinetics and strong {111} recrystallized texture upon annealing. Simulations with Taylor model indicate that shear strain occurred on more slip systems in the 2-cycle sample, which could explain the formation of cell blocks in {111} grains.     

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate

GaN nanowires were successfully prepared on Si（111） substrate through ammoniating Ga203/BN films deposited by radio frequency magnetron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photoluminescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.     

CN_x薄膜的制备及电子结构

采用反应溅射方法制备了氮化碳薄膜,研究了反应气体压力、溅射功率对薄膜形成的影响,并用Ｘ射线电子能谱（ＸＰＳ） 和富里叶变换红外光谱（ＦＴＩＲ）对样品的电子结构进行了分析．结果表明：反应气体Ｎ２ 的压力太高或太低、溅射功率太大或太小,均不利于氮化碳膜的形成;在Ｎ２ 压力为８ Ｐａ、溅射功率为２００ Ｗ 时,薄膜的氮原子数分数得到最大值４１％ ;ＸＰＳ和ＦＴＩＲ分析结果揭示了膜中没有自由的Ｎ原子,所有的Ｎ原子均与Ｃ原子作用形成化学键,而且Ｃ Ｎ 单键、Ｃ Ｎ 双键、Ｃ Ｎ 三键共存．膜中Ｃ Ｈ 和Ｎ Ｈ 振动模式的存在,说明沉积在Ｓｉ 衬底上的氮化碳薄膜有较强的从空气中吸收氢的能力．     

对靶磁控溅射FeCoN薄膜的结构与磁性

利用改进后的对靶磁控溅射系统,  以N₂/Ar混合气体为溅射气体,  在未加热的Si(111)衬底上沉积FeCoN薄膜.  采用X射线衍射仪(XRD)、 透射电子显微镜(TEM)、 扫描电子显微镜(SEM)和超导量子干涉仪(SQUID)研究不同Co靶溅射功率对FeCoN薄膜样品的结构、 形貌和磁性性能的影响.  结果表明: 固定Fe靶功率为160 W(电流I=0.4 A),  当Co靶功率为2.4 W(I=0.04 A)时,  薄膜由Co溶入ε-Fe₃N中形成的ε-(Fe,Co)₃N化合物相构成; 当Co靶功率为58 W(I=0.2 A)时,  获得了Fe₃N/Co₃N化合物相,  薄膜的饱和磁化强度(M_s)为151.47 A·m²/kg,  矫顽力(H_c)为3.68 kA/m; 当Co靶功率为11.9 W(I=0.07 A)时,  制备出具有高饱和磁化强度的α″-(Fe,Co)₁₆N₂化合物相,  薄膜的M_s=265.08 A·m²/kg,  H_c=8.24 kA/m.       

热处理温度对溶胶-凝胶法制备的Ce_(0.97)Co_(0.03)O_2薄膜结构和光学性能的影响

采用溶胶-凝胶法,在Si(100)衬底上制备了3%Co掺杂CeO2薄膜,研究了不同热处理温度对Ce0.97Co0.03O2薄膜结构和光学性质的影响。X射线衍射(XRD)表明,3%Co掺杂CeO2薄膜为多晶薄膜,且未破坏CeO2原有的结构,随着退火温度的升高,晶粒尺寸逐渐增大。椭偏光谱法研究表明,Ce0.97Co0.03O2薄膜的光学常数(折射率n、消光系数k)随着退火温度增加而增大,光学带隙Eg随退火温度增加而减小,这是薄膜结构随退火温度增加发生变化所致。     

射频磁控溅射法LiNbO3薄膜的制备及其影响因素研究

采用射频磁控溅射法在Si(111)和Si(100)上制备LiNbO3薄膜.通过XRD技术探讨了硅基片取向和所制备的薄膜的取向之间的联系,研究了不同靶材对薄膜的影响,讨论了热处理温度、工艺和所制备的薄膜取向的关系.报道了在Si(111)基片上制备高c轴取向的LiNbO压电薄膜的制备方法.     

Effect of oxygen partial pressure and transparent substrates on the structural and optical properties of ZnO thin films and their performance in energy harvesters

Zinc oxide (ZnO) thin films were deposited onto different substrates-tin-doped indium oxide (ITO)/glass, ITO/polyethylene naphthalate (PEN), ITO/polyethylene terephthalate (PET)-by the radio-frequency (RF) magnetron sputtering method. The effect of various O₂/(Ar+O₂) gas flow ratios (0, 0.1, 0.2, 0.3, 0.4, 0.5, and 0.6) was studied in detail. ZnO layers deposited onto ITO/PEN and ITO/PET substrates exhibited a stronger c-axis preferred orientation along the (0002) direction compared to ZnO deposited onto ITO/glass. The transmittance spectra of ZnO films showed that the maximum transmittances of ZnO films deposited onto ITO/glass, ITO/PEN, and ITO/PET substrates were 89.2%, 65.0%, and 77.8%, respectively. Scanning electron microscopy (SEM) images of the film surfaces indicated that the grain was uniform. The cross-sectional SEM images showed that the ZnO films were columnar structures whose c-axis was perpendicular to the film surface. The test results for a fabricated ZnO thin film based energy harvester showed that its output voltage increased with increasing acceleration of external vibration.     

Nb5N6 thin film on silicon and silicon oxide: A good material for terahertz detection

Voltage responsivity of bolometer will benefit from high temperature coefficient of resistance （TCR） of the material. The Nb5N6 thin solid films we proposed in this paper have high TCR, compared with the commonly-used materials such as Nb and Bi. The films were sputtered on Si（100）, SiO2/Si（100）, SiO2 substrates by using radio frequency （rt） magnetron sputtering. The deposition conditions have been optimized to get high TCR. The highest TCR is over 0.91% K^-1 at 300 K and up to 4.5% K^-1 -7% K^-1 at 78 K, which is good enough to be used in terahertz detection and thermometer fabrication in the range from 78 K to 300 K.     

Effects of substrate temperature and ambient oxygen pressure on growth of Ba(Fe1/2Nb1/2)O3 thin films by pulsed laser deposition

Ba(Fe1/2Nb1/2)O3 thin films were grown on Pt/TiO2/SiO2/Si substrates with pulsed laser deposition (PLD) at temperatures ranging from 823 to 923 K with the varied ambient oxygen pressure. X-ray diffraction (XRD) data confirmed the single phase of polycrystalline Ba(Fe1/2Nb1/2)O3 thin films. The effects of substrate temperature and ambient oxygen pressure on the surface morphologies of the thin films were investigated by atomic force microscopy (AFM) and the growth dynamics of thin films was discussed. Larger grains and denser surface morphologies were observed with increasing substrate temperature. While finer grains were produced with increasing ambient oxygen pressure due to more frequent collisions between the ejected species and ambient oxygen molecules. The influence of the substrate temperature and ambient oxygen pressure on the dielectric properties was also discussed. Improved dielectric constant and decreased dielectric loss was observed for the thin film deposited at evaluated temperature.     

Nd掺杂对ZnO薄膜结构及室温光致发光特性的影响

通过射频磁控溅射技术在Si（111）衬底上制备了不同含量的Nd掺杂ZnO薄膜.XRD和AFM分析表明,Nd掺杂没有改变ZnO薄膜的结构,薄膜为纳米多晶结构,未掺杂ZnO沿c择优生长.Nd掺杂使ZnO薄膜表面粗糙,起伏较大,薄膜中随Nd掺杂量的增加颗粒减小.室温光致发光谱显示,薄膜出现了395nm的强紫光峰和495nm的弱绿光峰,同时,Nd掺杂不改变PL谱的峰位置,Nd含量对PL谱的峰强度产生了一定影响.     

Development of inclusions in 3104 alloy melt during heating and holding treatments

Developments in the contents of different typical inclusions in 3104 alloy melt were described during heating and holding processing. The settling process of inclusion particles was investigated by measuring the contents of inclusions in the surface, center, and bottom layers of the molten metal. In the results, main inclusions observed and determined by Prefil and PoDFA methods are MgO, Al₂O₃, spinel (MgAl₂O₄), and TiB₂ particles or thin films. It is found that some small particles of Al₂O₃ and MgO are transformed into spinel particles, and the formation rate increases as the temperature and the holding period of melt increase. The content of inclusions increases from 3.37 mm2·kg-1 to 7.54 mm2·kg-1 and then decreases to 3.08 mm2·kg-1 after holding for 90 min. This is attributed to a settling phenomenon and a significant increase in settling velocity after holding for 60 min. The content of inclusion particles decreases by means of settlement and flotation in liquid aluminum with an increase in holding time. The theoretical analysis and experiment results are in essential agreement with those from industrial production.     

磁控溅射表面镀膜对Nd2Fe14B稀土永磁体抗腐蚀性能的影响

在Nd₂Fe₁₄B稀土永磁体基体表面,采用磁控溅射（直流+射频）技术制备了Ti/Ni,Ti/Al和Al/Ni等二元合金薄膜和Ti/Al/Ni三元合金薄膜。并通过中性盐雾试验、腐蚀失重计算、电化学腐蚀试验、金相观察等方式,对比研究了不同表面处理对Nd₂Fe₁₄B稀土永磁体基体抗腐蚀性能的影响,并构建了腐蚀模型。研究发现：Ti/Ni,Ti/Al和Al/Ni等二元合金薄膜和Ti/Al/Ni三元合金薄膜均有效地提高了Nd₂Fe₁₄B稀土永磁体基体耐中性盐雾腐蚀和电化学腐蚀的能力;Ti/Al/Ni三元合金薄膜较Ti/Ni,Ti/Al和Al/Ni等二元合金薄膜有更优良的综合耐腐蚀性能,其磁控溅射工艺参数为：Ar流量60 sccm,基片温度常温,Ni,Al,Ti的溅射功率都为250 W,基片转速20 r·min^-1,镀膜均速0.3 nm·s^-1,总计溅射时间1 h。     

Low-field positive and high-field negative magnetoresistances in multiphase Fe-oxide thin films at room temperature

Multiphase Fe-oxide thin films are fabricated on glass substrates by a facing-target sputtering tech- nique. X-ray diffraction and X-ray photoelectron spectroscopy reveal that Fe, Fe3BO4, γ -Fe2BO3B and FeO coexist in the films. High resolution transmission electron microscopy shows the well-defined colum- nar grain structure with the unoxidized Fe as the core and iron-oxide as the shell. The low-field positive and high-field negative magnetoresistances coexist in such a system at room temperature, which can be explained by considering a shell/core model. Nonlinear current-voltage curve and photovoltaic effect further confirm the tunneling-type conduction.     

Magnetocrystalline anisotropy and spin-wave stiffness in tensile-strained La0.67Ba0.33MnO3 films: An investigation via ferromagnetic resonance

Tensile-strained epitaxial La_0.67Ba_0.33MnO₃ (LBMO) film has been prepared by magnetron sputtering technique on (001) oriented spinel MgAl₂O₄ substrate. The transport and magnetic measurements give an insulator-metal transition and paramagnetic-ferromagnetic transition occurring at ～150 K and 250 K respectively, which implies the phase separation in such a tensile-strained film. By analyzing the angular and temperature dependences of the ferromagnetic resonance (FMR), we determine the magnetocrystalline anisotropy of the film. It is found that the tensile-strained film is dominated by an easy-axis corresponding to the compressive out-of-plane direction, though the magnitudes of anisotropy constants are relatively small and their temperature dependences are some complex. Furthermore, the FMR spectra show additional spin wave resonance (SWR), and the field positions can be indexed to follow a linear dependence on the square of index n. The scaling gives a spin-wave exchange stiffness D of 20.7 meV Ų at low temperature, which is less than half of that in strain-free LBMO films, implying that the double exchange interaction is remarkably suppressed in the tensile-strained LBMO films.     

Structure and 57Fe conversion electron Mössbauer spectroscopy study of Mn-Zn ferrite nanocrystal thin films by electroless plating in aqueous solution

Mn1-xZnxFe2O4thin films with various Zn contents and of different thickness were synthesized on glass substrates directly by electroless plating in aqueous solution at 90℃ without heat treatment. The Mn-Zn ferrite films have a single spinel phase structure and well-crystallized columnar grains growing per- pendicularly to the substrates. The results of conversion electron ^57Fe Mossbauer spectroscopy （CEMS） Indicate that the cation distribution of Mn1-xZnxFe204 ferrite nanocrystal thin films fabricated by electroless plating is different from the bulk materials＇ and a great quantity of Fe^3＋ ions are still present on A sites for x〉0.5. When the Zn content of the films increases, Fe^3＋ ions in the films transfer from A sites to B sites and the hyperfine magnetic field reduces, suggesting that Zn2. has strong chemical affinity towards the A sites. On the other side, with the increase of the thickness of the films, Fe3＋ ions, at B sites in the spinel structure, increase and the array of magnetic moments no longer lies in the thin film plane completely. At x = 0.5, Hc and Ms of Mn1-xZnxFe204thin films show a minimum of 3.7 kA/m and a maximum of 419.6 kA/m, respectively.     

Degradation of 2, 4-D acid using Mn2+ as catalyst under UV irradiation

In this paper, the oxidative degradation of 2, 4-dichlorophenoxyacetic acid (2, 4-D) using Mn²⁺/H₂O₂ reagent under UV irradiation was studied. The results show that 2, 4-D was degraded more completely in Mn²⁺/H₂O₂ solution than traditional Fenton solutions. The effects of the concentration of Mn²⁺, H₂O₂ and pH were also investigated. And under the optimal condition of 1.48×10⁻⁴ mol/L, 8.99×10⁻⁵ mol/L and pH 3.38, the formation of ·OH was the most, both the decomposition rate of H₂O₂ and the degradation rate of 2, 4-D were the fastest. In addition, the photoreaction process was monitored using spin-trapping electron paramagnetic resonance (EPR), and the results indicated that the oxidative process was predominated mainly by the hydroxyl radical (·OH) gennerated in the system. Biography: HUANG Yingping (1964–), Professor, Ph. D., research direction: pollution ecology and water pollution control.     

γ′-Fe4N薄膜的制备及其磁性

采用直流磁控溅射方法, 以Ar/N₂为放电气体（N₂/(Ar+N₂)=10％）, 在玻璃和NaCl(100)单晶片上分别沉积获得Fe-N薄膜样品. 利用X射线衍射(XRD)、 原子力显微镜(AFM)和超导量子干涉仪(SQUID)对样品的结构、 形貌和磁性能进行分析, 研究基片和基片温度等条件对薄膜的影响. 结果表明, 以NaCl单晶为基片获得单相γ′-Fe₄N薄膜, 与玻璃基片相比可降低其生成的基片温度并可扩大形成温度的范围, 且比饱和磁化强度略有增大. 