High-resolution spectroscopy of two-dimensional electron systems

Spectroscopic methods involving the sudden injection or ejection of electrons in materials are a powerful probe of electronic structure and interactions. These techniques, such as photoemission and tunnelling, yield measurements of the 'single-particle' density of states spectrum of a system. This density of states is proportional to the probability of successfully injecting or ejecting an electron in these experiments. It is equal to the number of electronic states in the system able to accept an injected electron as a function of its energy, and is among the most fundamental and directly calculable quantities in theories of highly interacting systems. However, the two-dimensional electron system (2DES), host to remarkable correlated electron states such as the fractional quantum Hall effect, has proved difficult to probe spectroscopically. Here we present an improved version of time-domain capacitance spectroscopy that allows us to measure the single-particle density of states of a 2DES with unprecedented fidelity and resolution. Using the method, we perform measurements of a cold 2DES, providing direct measurements of interesting correlated electronic effects at energies that are difficult to reach with other techniques; these effects include the single-particle exchange-enhanced spin gap, single-particle lifetimes in the quantum Hall system, and exchange splitting of Landau levels not at the Fermi surface.     

抛物型量子点的非线性光学整流研究

在紧凑密度矩阵方法和迭代法的框架下,从理论上研究了抛物型量子点（QDs）在不同的量子点半径、宽度以及外加电场和磁场下光学整流（OR）系数。在有效质量近似下,计算了量子点中电子的受限波函数和能量。给出了典型GaAs/AlGaAs抛物型量子点的数值结果。通过研究发现,非线性光学整流系数受到量子点的宽度、半径以及电场和磁场的强烈影响。在考虑电场和磁场的影响时,峰值向高能量方向移动。     

Tunnelling between the edges of two lateral quantum Hall systems

The edge of a two-dimensional electron system in a magnetic field consists of one-dimensional channels that arise from the confining electric field at the edge of the system. The crossed electric and magnetic fields cause electrons to drift parallel to the sample boundary, creating a chiral current that travels along the edge in only one direction. In an ideal two-dimensional electron system in the quantum Hall regime, all the current flows along the edge. Quantization of the Hall resistance arises from occupation of N one-dimensional edge channels, each contributing a conductance of e2/h. Here we report differential conductance measurements, in the integer quantum Hall regime, of tunnelling between the edges of a pair of two-dimensional electron systems that are separated by an atomically precise, high-quality, tunnel barrier. The resultant interaction between the edge states leads to the formation of new energy gaps and an intriguing dispersion relation for electrons travelling along the barrier: for example, we see a persistent conductance peak at zero bias voltage and an absence of tunnelling features due to electron spin. These features are unexpected and are not consistent with a model of weakly interacting edge states. Remnant disorder along the barrier and charge screening may each play a role, although detailed numerical studies will be required to elucidate these effects.     

A topological Dirac insulator in a quantum spin Hall phase

When electrons are subject to a large external magnetic field, the conventional charge quantum Hall effect dictates that an electronic excitation gap is generated in the sample bulk, but metallic conduction is permitted at the boundary. Recent theoretical models suggest that certain bulk insulators with large spin-orbit interactions may also naturally support conducting topological boundary states in the quantum limit, which opens up the possibility for studying unusual quantum Hall-like phenomena in zero external magnetic fields. Bulk Bi(1-x)Sb(x) single crystals are predicted to be prime candidates for one such unusual Hall phase of matter known as the topological insulator. The hallmark of a topological insulator is the existence of metallic surface states that are higher-dimensional analogues of the edge states that characterize a quantum spin Hall insulator. In addition to its interesting boundary states, the bulk of Bi(1-x)Sb(x) is predicted to exhibit three-dimensional Dirac particles, another topic of heightened current interest following the new findings in two-dimensional graphene and charge quantum Hall fractionalization observed in pure bismuth. However, despite numerous transport and magnetic measurements on the Bi(1-x)Sb(x) family since the 1960s, no direct evidence of either topological Hall states or bulk Dirac particles has been found. Here, using incident-photon-energy-modulated angle-resolved photoemission spectroscopy (IPEM-ARPES), we report the direct observation of massive Dirac particles in the bulk of Bi(0.9)Sb(0.1), locate the Kramers points at the sample's boundary and provide a comprehensive mapping of the Dirac insulator's gapless surface electron bands. These findings taken together suggest that the observed surface state on the boundary of the bulk insulator is a realization of the 'topological metal'. They also suggest that this material has potential application in developing next-generation quantum computing devices that may incorporate 'light-like' bulk carriers and spin-textured surface currents.     

Four-terminal resistance of a ballistic quantum wire

The electrical resistance of a conductor is intimately related to the relaxation of the momentum of charge carriers. In a simple model, the accelerating force exerted on electrons by an applied electric field is balanced by a frictional force arising from their frequent collisions with obstacles such as impurities, grain boundaries or other deviations from a perfect crystalline order. Thus, in the absence of any scattering, the electrical resistance should vanish altogether. Here, we observe such vanishing four-terminal resistance in a single-mode ballistic quantum wire. This result contrasts the value of the standard two-probe resistance measurements of h/2e2 approximately 13 kOmega. The measurements are conducted in the highly controlled geometry afforded by epitaxial growth onto the cleaved edge of a high-quality GaAs/AlGaAs heterostructure. Two weakly invasive voltage probes are attached to the central section of a ballistic quantum wire to measure the inherent resistance of this clean one-dimensional conductor.     

Erasable electrostatic lithography for quantum components

Quantum electronic components--such as quantum antidots and one-dimensional channels--are usually defined from doped GaAs/AlGaAs heterostructures using electron-beam lithography or local oxidation by conductive atomic force microscopy. In both cases, lithography and measurement are performed in very different environments, so fabrication and test cycles can take several weeks. Here we describe a different lithographic technique, which we call erasable electrostatic lithography (EEL), where patterns of charge are drawn on the device surface with a negatively biased scanning probe in the same low-temperature high-vacuum environment used for measurement. The charge patterns locally deplete electrons from a subsurface two-dimensional electron system (2DES) to define working quantum components. Charge patterns are erased locally with the scanning probe biased positive or globally by illuminating the device with red light. We demonstrate and investigate EEL by drawing and erasing quantum antidots, then develop the technique to draw and tune high-quality one-dimensional channels. The quantum components are imaged using scanned gate microscopy. A technique similar to EEL has been reported previously, where tip-induced charging of the surface or donor layer was used to locally perturb a 2DES before charge accumulation imaging.     

Observation of a quarter of an electron charge at the nu = 5/2 quantum Hall state

The fractional quantum Hall effect, where plateaus in the Hall resistance at values of h/nue2 coexist with zeros in the longitudinal resistance, results from electron correlations in two dimensions under a strong magnetic field. (Here h is Planck's constant, nu the filling factor and e the electron charge.) Current flows along the sample edges and is carried by charged excitations (quasiparticles) whose charge is a fraction of the electron charge. Although earlier research concentrated on odd denominator fractional values of nu, the observation of the even denominator nu = 5/2 state sparked much interest. This state is conjectured to be characterized by quasiparticles of charge e/4, whose statistics are 'non-abelian'-in other words, interchanging two quasiparticles may modify the state of the system into a different one, rather than just adding a phase as is the case for fermions or bosons. As such, these quasiparticles may be useful for the construction of a topological quantum computer. Here we report data on shot noise generated by partitioning edge currents in the nu = 5/2 state, consistent with the charge of the quasiparticle being e/4, and inconsistent with other possible values, such as e/2 and e. Although this finding does not prove the non-abelian nature of the nu = 5/2 state, it is the first step towards a full understanding of these new fractional charges.     

光致发光谱测量掺硅AlGaAs中的DX能级

在调制掺杂ＧａＡｓ／ＡｌＧａＡｓ多量子阱结构的光致发光谱中,靠近强发光峰的低能端存在几个弱峰,且发光强度随温度的增加而变化．这些弱峰是由于掺硅ＡｌＧａＡｓ中ＤＸ中心上的电子向起受主作用的ＳｉＡｓ原子跃迁复合而引起．由此确定ＤＸ中心有四个能级,其激活能分别为０．３５ｅＶ,０．３７ｅＶ,０．３９ｅＶ和０．４１ｅＶ．     

Supercurrent reversal in quantum dots

When two superconductors are electrically connected by a weak link--such as a tunnel barrier--a zero-resistance supercurrent can flow. This supercurrent is carried by Cooper pairs of electrons with a combined charge of twice the elementary charge, e. The 2e charge quantum is clearly visible in the height of voltage steps in Josephson junctions under microwave irradiation, and in the magnetic flux periodicity of h/2e (where h is Planck's constant) in superconducting quantum interference devices. Here we study supercurrents through a quantum dot created in a semiconductor nanowire by local electrostatic gating. Owing to strong Coulomb interaction, electrons only tunnel one-by-one through the discrete energy levels of the quantum dot. This nevertheless can yield a supercurrent when subsequent tunnel events are coherent. These quantum coherent tunnelling processes can result in either a positive or a negative supercurrent, that is, in a normal or a pi-junction, respectively. We demonstrate that the supercurrent reverses sign by adding a single electron spin to the quantum dot. When excited states of the quantum dot are involved in transport, the supercurrent sign also depends on the character of the orbital wavefunctions.     

单电子输运器件中的动态电子传输

在基于GaAs/AlGaAs异质结二维电子气的声表面波单电子输运器件中,利用声表面波诱发的动态量子点依次通过由串联的三对刻蚀门电极各自所形成的准一维通道,成功实现了电子的量子化动态输运,并对输运特性进行了分析.通过提出局域态杂质模型和电子的屏蔽效应,解释了实验中观测到的双峰声电电流现象.     

Quantum oscillations in a molecular magnet

The term 'molecular magnet' generally refers to a molecular entity containing several magnetic ions whose coupled spins generate a collective spin, S (ref. 1). Such complex multi-spin systems provide attractive targets for the study of quantum effects at the mesoscopic scale. In these molecules, the large energy barriers between collective spin states can be crossed by thermal activation or quantum tunnelling, depending on the temperature or an applied magnetic field. There is the hope that these mesoscopic spin states can be harnessed for the realization of quantum bits--'qubits', the basic building blocks of a quantum computer--based on molecular magnets. But strong decoherence must be overcome if the envisaged applications are to become practical. Here we report the observation and analysis of Rabi oscillations (quantum oscillations resulting from the coherent absorption and emission of photons driven by an electromagnetic wave) of a molecular magnet in a hybrid system, in which discrete and well-separated magnetic clusters are embedded in a self-organized non-magnetic environment. Each cluster contains 15 antiferromagnetically coupled S = 1/2 spins, leading to an S = 1/2 collective ground state. When this system is placed into a resonant cavity, the microwave field induces oscillatory transitions between the ground and excited collective spin states, indicative of long-lived quantum coherence. The present observation of quantum oscillations suggests that low-dimension self-organized qubit networks having coherence times of the order of 100 micros (at liquid helium temperatures) are a realistic prospect.     

Cooper instability of composite fermions

When confined to two dimensions and exposed to a strong magnetic field, electrons screen the Coulomb interaction in a topological fashion; they capture an even number of quantum vortices and transform into particles called 'composite fermions' (refs 1-3). The fractional quantum Hall effect occurs in such a system when the ratio (or 'filling factor, nu) of the number of electrons and the degeneracy of their spin-split energy states (the Landau levels) takes on particular values. The Landau level filling nu = 1/2 corresponds to a metallic state in which the composite fermions form a gapless Fermi sea. But for nu = 5/2, a fractional quantum Hall effect is observed instead; this unexpected result is the subject of considerable debate and controversy. Here we investigate the difference between these states by considering the theoretical problem of two composite fermions on top of a fully polarized Fermi sea of composite fermions. We find that they undergo Cooper pairing to form a p-wave bound state at nu = 5/2, but not at nu = 1/2. In effect, the repulsive Coulomb interaction between electrons is overscreened in the nu = 5/2 state by the formation of composite fermions, resulting in a weak, attractive interaction.     

Imaging of localized electronic states in the quantum Hall regime

The concept of electron localization has long been accepted to be essential to the physics of the quantum Hall effect in a two-dimensional electron gas. The exact quantization of the Hall resistance and the zero of the diagonal resistance over a range of filling factors close to integral are attributed to the localization of electronic states at the Fermi level in the interior of the gas. As the electron density is changed, charging of the individual localized states may occur by single-electron jumps, causing associated oscillations in the local electrostatic potential. Here we search for such a manifestation of localized states in the quantum Hall regime, using a scanning electrometer probe. We observe localized potential signals, at numerous locations, that oscillate with changing electron density. In general, the corresponding spatial patterns are complex, but well-defined objects are often seen which evidently arise from individual localized states. These objects interact, and at times form a lattice-like arrangement.     

磁场对CaN/AlxCa1-xN抛物量子阱中电子态能量的影响

采用变分法,研究了外界磁场对抛物量子阱中基态能量的影响．并给出抛物量子阱CaN／AlxCa1-xN中的数值结果．研究结果表明,基态能量对磁场强度的变化很敏感,并随着外磁场的增加而增加;磁场对基态能量的贡献随着阱宽的增大而增大．     

Quantum metallicity in a two-dimensional insulator

One of the most far-reaching problems in condensed-matter physics is to understand how interactions between electrons, and the resulting correlations, affect the electronic properties of disordered two-dimensional systems. Extensive experimental and theoretical studies have shown that interaction effects are enhanced by disorder, and that this generally results in a depletion of the density of electronic states. In the limit of strong disorder, this depletion takes the form of a complete gap in the density of states. It is known that this 'Coulomb gap' can turn a pure metal film that is highly disordered into a poorly conducting insulator, but the properties of these insulators are not well understood. Here we investigate the electronic properties of disordered beryllium films, with the aim of disentangling the effects of the Coulomb gap and the underlying disorder. We show that the gap is suppressed by a magnetic field and that this drives the strongly insulating beryllium films into a low-temperature 'quantum metal' phase with resistance near the quantum resistance RQ = h/e2, where h is Planck's constant and e is the electron charge.     

量子点五电子系统在外磁场中的基态特性

利用少体物理的方法,研究了磁场中二维量子点五电子系统基态能量与角动量间的变化关系,以及磁场强度和约束势的大小对五电子系统基态的影响,数值计算表明,量子力学对称性是出现幻数角动量的重要因素     

光激励下的半导体纳米材料中杂质对超声的吸收研究

研究了在激光场中晶格振动与杂质核相互作用下,具有无限势垒量子阱结构半导体中的超声衰减问题.电子吸收声子不能从受体杂质能"带"跃迁到第一量子能级导带,但在高频激光场中却会发生,激光场补充电子跃迁吸收声子所需能量.对总超声吸收系数进行了推算,并将此结果应用到纳米砷化镓(GaAs/AlGaAs)量子阱样品中,发现其总吸声系数比相应的传统物质的吸收系数大得多.     

质量效应对抛物量子阱中电子子带的影响

考虑有效质量随空间位置的变化，计算了垂直磁场作用下量子阱中电子的第一子带，与不考虑ＳＤＥＭ效应的结果做比较，并对其物理意义进行了分析。     

Magnetic impurity formation in quantum point contacts

A quantum point contact (QPC) is a narrow constriction between two wider electron reservoirs, and is the standard building block of sub-micrometre devices such as quantum dots and qubits (the proposed basic elements of quantum computers). The conductance through a QPC changes as a function of its width in integer steps of G(0) = 2e2/h (where e is the charge on an electron, and h is Planck's constant), signalling the quantization of its transverse modes. But measurements of these conductance steps also reveal an additional shoulder at a value around 0.7G(0) (refs 1-4), an observation that has remained a puzzle for more than a decade. It has recently been suggested that this phenomenon can be explained by the existence of a magnetic 'impurity' in the QPC at low electron densities. Here we present extensive numerical density-functional calculations that reveal the formation of an electronic state with a spin-1/2 magnetic moment in the channel under very general conditions. In addition, we show that such an impurity will also form at large magnetic fields, for a specific value of the field, and sometimes even at the opening of the second transverse mode in the QPC. Beyond explaining the source of the '0.7 anomaly', these results may have far-reaching implications for spin-filling of electronic states in quantum dots and for the dephasing of quantum information stored in semiconductor qubits.     

Manipulating spin and charge in magnetic semiconductors using superconducting vortices

The continuous need for miniaturization and increase in device speed drives the electronics industry to explore new avenues of information processing. One possibility is to use electron spin to store, manipulate and carry information. All such 'spintronics' applications are faced with formidable challenges in finding fast and efficient ways to create, transport, detect, control and manipulate spin textures and currents. Here we show how most of these operations can be performed in a relatively simple manner in a hybrid system consisting of a superconducting film and a paramagnetic diluted magnetic semiconductor (DMS) quantum well. Our proposal is based on the observation that the inhomogeneous magnetic fields of the superconducting film create local spin and charge textures in the DMS quantum well, leading to a variety of effects such as Bloch oscillations and an unusual quantum Hall effect. We exploit recent progress in manipulating magnetic flux bundles (vortices) in superconductors and show how these can create, manipulate and control the spin textures in DMSs.