Colossal magnetoresistance and spin-glass properties of La1－xTexMnO3 (x = 0.04, 0.1)

For the first time, a novel material of La1-x^-TexMnO3 (x = 0.04, 0.1), in which the La ions are replaced by the nonmetal element Te in the Chalcogen, has been synthesized. The material has a rhombohedral lattice with the space group of R 3^- c, and Te ions have a tetravalence state. The curves of the resistivity vs. temperature indicate that this material has the property of a metal-semiconductor transition and the colossal magnetoresistance (CMR) effect. The maximum magnetoreistance ratio MR= [p(0) - p(H)]/p(0) is about 51% at 4 T for x = 0.1. Besides, a spin-glass behavior at low magnetic fields is observed in this compound.     

Giant magneto-impedance and low-frequency magneto-resistance effect in NiFeB coated composite wires

Composite wires of 100 μm insulated CuBewire plated with a layer of NiFeB were produced by elec-troless-deposition, and their magnetic properties were stud-led. The results showed that a good magneto-impedance (MI)effect can be obtained at relatively low frequency. The largestMI ratio (△Z/Z)max obtained is 250% at 500 kHz. Mag-neto-resistance effect was also observed at low frequency,with the (△R/R)max observed to be -8.5% at 540 Hz and 38.7% at 10 kHz. Results are discussed, and the equivalent resistance and inductance as the result of the NiFeB layer are taken into account.     

Magnetoresistive sensors with hybrid Co/insulator/ZnO:Co junctions

Magnetic tunnel junctions (MTJs), as the seminal spintronic devices, are expected for applications in magnetoresistive sensors due to their large magnetoresistance (MR) and high field sensitivity. Two hybrid Co/insulator/ZnO:Co junctions were fabricated with two different barriers to investigate the magneto-transport properties. Experimental results indicate that, both Co/MgO/ZnO:Co and Co/ZnO/ZnO:Co junctions show the positive and nearly linear MR, and their tunnel magnetoresistances (TMR) are 21.8% and 13.6%, respectively, when the current is applied perpendicular to the film plane under the magnetic field of 2 T at 4 K. The nonlinearity of MR is less than 1% within the magnetic field (H) of 1 kOe < H < 12 kOe at low temperature, making them attractive as magnetoresistive sensors. The higher MR of Co/MgO/ZnO:Co junctions is due to the superior spin filtering effect and larger effective barrier height of the MgO barrier. This linear MR characteristic of Co/insulator/ZnO:Co structures shows a promising future on the applications of diluted magnetic semiconductors in magnetoresistive sensors.     

Tuning the magnetic anisotropy in LSMO manganite films through non-magnetic nanoparticles

We report the observation of anomalous magnetic anisotropy driven by nonmagnetic ZrO2 nanoparticles in epitaxial La2/3Sr1/3MnO (LSMO) films grown on LaAlO3 (LAO) substrates. The compressive epitaxial strain imposed by the lattice mismatch of substrate and film is tuned by the density of ZrO2 nanoparticles embedded in the film matrix and affects the magnetic anisotropy as well as the magnetotransport properties. Epitaxial 54 nm thick LSMO thin films with different concentrations of ZrO2 nanoparticles demonstrate anisotropic hysteresis loops concomitant with anisotropic magnetotresistance behavior. The biaxial epitaxial strain, induced by the substrate/film lattice parameter mismatch is partially relaxed by increasing the density of precipitates and they serve as a tuning parameter for the strain state. We interpret our results by a strain-induced interplay of impurity scattering, weak localization and magnetic domain structure.     

Measurement of Magnetization Curve and Magnetic Relaxation for 2H-NbSe2 Crystals

The characteristics of electronic transport properties: behaviors of magnetization curve and magnetic relaxation of a typical normal superconductor 2H-NbSe2 are investigated. The results show that Tc and △Tc of the samples are 7. 2,0. 18 K, indicating that superconducting energy gap at zero temperature is 1. 1 meV. No fish tail shape is found in the magnetization curves at several temperatures. The relationship between remnant magnetic moment and time reveals that the magnetic flux creep of the sample agrees with the Kim-Anderson thermal activation model with the relaxation rate S=0.000 36 at T=6 K.     

Recalescence behavior and solidification structure of the undercooled Fe82B17Si1 eutectic alloy

By cyclic superheating incorporated with glass fluxing denucleation method the Fes2Bl7Si1 eutectic al-loy was undercooled up to △ T = 342 K. The relations between recalescence behavior and solidification structures weresystematically studied in the undercooling range of 6-342 K. Two critical undercoolings were observed: mixed eutecticwas the unique growth morphology when the undercooling was less than △T1 = 63 K; but the microstructure transformedto complete undercooled anomalous eutectic when the undercooling was greater than △T2 = 164 K. The two eutecticphases α(Fe,Si) and Fe2B conformed to the non-reciprocal nucleation effect. The boundary of the coupled zone of α(Fe, Si)-Fe2 B system shifted toward the Fe2 B side, and intersected the eutectic composition line at △ T = 154 K and△x T= 264 K, whose valley was at about △ T = 207 K.     

Doping effects of ZrC and ZrB2 in the powder-in-tube processed MgB2 tapes

We have investigated the effects of ZrC and ZrB2 doping on the superconducting properties of the powder-in-tube processed MgB2/Fe tapes. Sam- ples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM/EDX), transport and magnetic measurements. We confirmed the fol- lowing quite different roles of ZrC and ZrB2 in MgB2. ZrC doping was found to decrease the transport critical current density (Jc) at 4.2 K, while the critical temperature (Tc) kept constant. In contrast, the Jc values in magnetic fields were enhanced greatly by the ZrB2 addition, which resulted in a decrease in Tc by only 0.5 K. The reason for different effects of two dopants is also discussed.     

Preparation,Characterization and Solar Photocatalytic Activity of P-YFeO_3-N-TiO_2 Nanojunctions

1 Results YFeO3-TiO2 composite photocatalysts with p-n heterojunction have been prepared by physical amalgamation.The physical and photophysical properties of the composites were characterized by XRD,TEM,UV-vis/DRS,XPS.Effects of calcination temperature and constitute content on structure and surface characterization were also investigated.Results show that the presence of p-n junction not only has visible light harvesting but potential force for hole-electron pair separation.A preliminary investigation of photocatalytic activity on orange II showed that YFeO3-TiO2 heterojunctions could be activated under visible light irradiation.The optimum photocatalytic junction is w(TiO2) =90% in the composites after calcining at 600 ℃.The improved photocatalytic activity,comparing with that of pure TiO2 and pure YFeO3,might attribute to the p-n heterojunction composed of p-type YFeO3 and n-type TiO2.Study of the process of electron and hole migratation will facilitate the exploitation of novel,highly efficient,visible-light-driven photocatalyst.     

Character and fabrication of Al/Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Al tunnel junctions for qubit application

The superconductive Josephson junction is the key device for superconducting quantum computation. We have fabricated Al/Al2O3/Al tunnel junctions using a double angle evaporation method based on a suspended shadow mask. The Al2O3 junction barrier has been formed by introducing pure oxygen into the chamber during the fabrication process. We have adjusted exposure conditions by changing either the oxygen pressure or the oxidizing time during the formation of tunnel barriers to control the critical current density Jc and the junction specific resistance Rc. Measurements of the leakage in Al/Al2O3/Al tunnel junctions show that the devices are suitable for qubit applications.     

All-optical wavelength converter using a microdisk resonator integrated with p-n junctions

We explore all-optical wavelength conversion in a microdisk resonator integrated with interleaved p-n junctions. Numerical simulation based on temporal coupled mode theory is performed to study the free-carrier dynamics inside the cavity. It reveals that the detuning of pump and probe frequencies and the carrier lifetime have a significant effect on the device performance. Experimental result confirms that the conversion speed can be considerably improved by applying a reverse bias on the p-n junctions. Wavelength conversion at 10 Gb/s data rate is achieved with a pump power of 5.41 dBm and a bias voltage of -6 V.     

温度对La_0.8Ca_0.2MnO_3/Si异质结的整流特性的影响

采用磁控溅射制备了LCMO／Si异质结,研究了异质结在不同温度以及低磁场下的电学特性。分析表明该p-n结在80-300K温度范围内具有很好的整流特性,并且随着温度升高,内建电势随之降低,整流效果有所提高。结电阻对低磁场敏感,0．3T的磁场下,磁电阻可达到42％。通过改变电压可以对磁电阻进行调节。     

CoFe/Al2O3/NiFe磁性隧道结的研究

利用离子束溅射技术制备了Ta/CoFe/Al2 O3 /NiFe磁性隧道结 ,研究了它的磁化曲线、磁电阻特性、伏安特性 ,发现它具有明显的巨磁电阻效应 .在研究电流与电压、电流与电阻特性中 ,发现了电流增大到 2 5 μA左右时隧道结呈现伪击穿现象的畸变输运行为 ,还分析了自旋相关散射对电流输运的影响     

p-n结型光催化剂Co3O4／In2O3的制备、表征及其光催化性能的研究

n结型Co3O4／In2O3光催化剂是用共沉淀法制备的．并用X射线衍射对其进行表征。用光催化还原Cr^6＋和光催化氧化甲基橙的效率来评价该催化剂的活性。实验分别研究了Co3O4的掺杂比、焙烧温度和焙烧时间对光催化活性的影响。实验结果表明．Co3O4的最佳掺杂比（质量分数）为5％。催化剂的最佳焙烧温度和最佳焙烧时间分别为300℃和2h。在可见光和紫外光的照射下。p-n结型光催化剂Co3O4／In2O3的光催化氧化活性和光催化还原活性均比纯In2O3的高。实验同时还探讨了影响p-n结型光催化剂Co3O4／In2O3催化活性的机理。     

单晶样品Pr3Co和Nd3Co的磁化率测量

我们对金属间化合物 Pr3Co和 Nd3Co单晶样品的磁化率在磁场 H=14π× 1 0 7A/M,温度范围为77K～ 3 0 0 K的条件下进行了测量 ,并计算得出它们的有效玻耳磁子     

Li[Li(1/3-x/3)Mn(2/3-2x/3)Cox]O2(x=O.1)的团簇自旋玻璃态行为

采用柠檬酸盐法制备了六方层状结构的Li[Li(1/3-x/3)Mn(2/3-2x/3)Cox]O2(x=0.1)材料.体系在高温区呈现顺磁态,通过拟合Curie-Weiss定律得到Curie和Weiss常数分别为1.70(2)m3 K/mol和-22(3)K.该材料的磁化率曲线在低温区表现出不可逆转变行为,并且这种不可...     

La2/3Pb1/3MnO3外延膜的结构及磁电特性研究

通过射频磁控溅射法在单晶LaAlO3(100)衬底上成功的沉积了膜厚为300 nm的La2/3Pb1/3MnO3外延膜。利用X射线衍射仪、原子力和超导量子干涉仪、直流四探针法对其结构、磁电特性进行了系统的研究。结果表明,薄膜为赝立方钙钛矿结构,沿(100)方向择优生长,具有良好的单晶外延结构。居里温度TC=345 K,在居里温度附近,发生铁磁-顺磁转变。此材料呈现出一种典型的自旋玻璃特性,是由于应力造成的。对于顺磁态、自旋玻璃态及铁磁态时其磁矩分布给予了合理的解释。在1 T磁场下,其磁电阻极大值为23.4%。     

Co/Al2O3/FeNi隧道结的中间层厚度对其输运特性的影响

制备了不同Al2O3厚度的Co／Al2O3／FeNi隧道结，并在77K温度下测量了其输运特性。发现随着厚度的增加，TMR下降。但是当Al2O3厚度降为2nm时，磁电阻不再出现典型的双峰曲线，而是呈现高阻和低阻两个状态。测量了隧道结的TMR随外加电压的变化、伏安特性曲线、电阻随温度的变化曲线，综合所有因素，在文中制备条件下，Al2O3厚度为4nm时，隧道结性能最好。     

La0.60Sr0.20K0.20-yyMnO3系列材料的磁电阻效应

利用溶胶-凝胶法制备了La0.60Sr0.20K0.20-yyMnO3(y=0,0.03,0.05,0.07)的类钙钛矿型稀土锰氧化物多晶样品.研究发现,引入离子空位后,样品CMR的温度稳定性得到改善.在1.8 T的磁场下,样品y=0.03,0.05,T=220~320 K时,其CMR值保持在4.7%(±0.2%)左右,温度稳定性较好.     

铁磁/绝缘层/有机半导体/铁磁多层膜隧道结的隧穿磁电阻的温度和偏压特性研究

采用Slonczewski的近自由电子模型, 利用转移矩阵的方法, 研究了铁磁/绝缘层/有机半导体/铁磁隧道结的自旋极化载流子隧穿的温度和偏压特性. 计算了T=4 K和T=300 K时, 隧穿磁电阻(Tunneling Magnetic Resistance, TMR)随偏压的变化关系, 同时还研究了零温时在有限偏压下隧穿磁电阻TMR与绝缘层厚度、有机半导体层厚度以及铁磁/有机半导体界面势垒U的变化关系. 我们的计算结果较好地解释了有关的实验 结论.