Magnetic control of ferroelectric polarization

The magnetoelectric effect--the induction of magnetization by means of an electric field and induction of polarization by means of a magnetic field--was first presumed to exist by Pierre Curie, and subsequently attracted a great deal of interest in the 1960s and 1970s (refs 2-4). More recently, related studies on magnetic ferroelectrics have signalled a revival of interest in this phenomenon. From a technological point of view, the mutual control of electric and magnetic properties is an attractive possibility, but the number of candidate materials is limited and the effects are typically too small to be useful in applications. Here we report the discovery of ferroelectricity in a perovskite manganite, TbMnO3, where the effect of spin frustration causes sinusoidal antiferromagnetic ordering. The modulated magnetic structure is accompanied by a magnetoelastically induced lattice modulation, and with the emergence of a spontaneous polarization. In the magnetic ferroelectric TbMnO3, we found gigantic magnetoelectric and magnetocapacitance effects, which can be attributed to switching of the electric polarization induced by magnetic fields. Frustrated spin systems therefore provide a new area to search for magnetoelectric media.     

各向异性亚铁磁链的自旋波理论

利用自旋波理论,对各向异性的亚铁磁链进行研究,得到了低激发能谱,同时计算了该体系的自由能、比热容等热力学量.进一步考虑在外磁场作用下该系统的情况,计算了系统的磁化强度,其磁化强度曲线出现一个平台,此平台随着各向异性因子的增加而逐渐消失.通过对这些物理量的研究,得出各向异性因子在亚铁磁链中起到很重要的作用.对于该体系中准粒子的激发,在两个临界值之间的各向异性因子对其起到一定的抑制作用,而在其它的情况下,这种作用会消失.因此,对于各向异性的亚铁磁链,各向异性因子就像是该系统的开关.     

Magnetization vector manipulation by electric fields

Conventional semiconductor devices use electric fields to control conductivity, a scalar quantity, for information processing. In magnetic materials, the direction of magnetization, a vector quantity, is of fundamental importance. In magnetic data storage, magnetization is manipulated with a current-generated magnetic field (Oersted-Ampère field), and spin current is being studied for use in non-volatile magnetic memories. To make control of magnetization fully compatible with semiconductor devices, it is highly desirable to control magnetization using electric fields. Conventionally, this is achieved by means of magnetostriction produced by mechanically generated strain through the use of piezoelectricity. Multiferroics have been widely studied in an alternative approach where ferroelectricity is combined with ferromagnetism. Magnetic-field control of electric polarization has been reported in these multiferroics using the magnetoelectric effect, but the inverse effect-direct electrical control of magnetization-has not so far been observed. Here we show that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As. The magnetic anisotropy, which determines the magnetization direction, depends on the charge carrier (hole) concentration in (Ga,Mn)As. By applying an electric field using a metal-insulator-semiconductor structure, the hole concentration and, thereby, the magnetic anisotropy can be controlled, allowing manipulation of the magnetization direction.     

Transient ferromagnetic-like state mediating ultrafast reversal of antiferromagnetically coupled spins

Ferromagnetic or antiferromagnetic spin ordering is governed by the exchange interaction, the strongest force in magnetism. Understanding spin dynamics in magnetic materials is an issue of crucial importance for progress in information processing and recording technology. Usually the dynamics are studied by observing the collective response of exchange-coupled spins, that is, spin resonances, after an external perturbation by a pulse of magnetic field, current or light. The periods of the corresponding resonances range from one nanosecond for ferromagnets down to one picosecond for antiferromagnets. However, virtually nothing is known about the behaviour of spins in a magnetic material after being excited on a timescale faster than that corresponding to the exchange interaction (10-100?fs), that is, in a non-adiabatic way. Here we use the element-specific technique X-ray magnetic circular dichroism to study spin reversal in GdFeCo that is optically excited on a timescale pertinent to the characteristic time of the exchange interaction between Gd and Fe spins. We unexpectedly find that the ultrafast spin reversal in this material, where spins are coupled antiferromagnetically, occurs by way of a transient ferromagnetic-like state. Following the optical excitation, the net magnetizations of the Gd and Fe sublattices rapidly collapse, switch their direction and rebuild their net magnetic moments at substantially different timescales; the net magnetic moment of the Gd sublattice is found to reverse within 1.5 picoseconds, which is substantially slower than the Fe reversal time of 300 femtoseconds. Consequently, a transient state characterized by a temporary parallel alignment of the net Gd and Fe moments emerges, despite their ground-state antiferromagnetic coupling. These surprising observations, supported by atomistic simulations, provide a concept for the possibility of manipulating magnetic order on the timescale of the exchange interaction.     

Electrical detection of spin precession in a metallic mesoscopic spin valve

To study and control the behaviour of the spins of electrons that are moving through a metal or semiconductor is an outstanding challenge in the field of 'spintronics', where possibilities for new electronic applications based on the spin degree of freedom are currently being explored. Recently, electrical control of spin coherence and coherent spin precession during transport was studied by optical techniques in semiconductors. Here we report controlled spin precession of electrically injected and detected electrons in a diffusive metallic conductor, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The output voltage of our device is sensitive to the spin degree of freedom only, and its sign can be switched from positive to negative, depending on the relative magnetization of the ferromagnetic electrodes. We show that the spin direction can be controlled by inducing a coherent spin precession caused by an applied perpendicular magnetic field. By inducing an average precession angle of 180 degrees, we are able to reverse the sign of the output voltage.     

铁磁颗粒膜自旋激发谱和热力学性质研究

求出了铁磁颗粒膜的自旋波激发谱和自旋极化激发谱随颗粒粒径和温度的变化规律，以及膜的磁化强度、磁化率、热容量．以（α-C：H）1-xCox颗粒膜为例作具体计算．结果表明：颗粒膜的自旋波激发谱的频率随颗粒粒径增大而减小，与温度无关；而颗粒膜的自旋极化激发谱与温度有关，表现出与铁磁块状晶体自旋波谱不同的变化特征．在零级近似下，由颗粒膜自旋波激发谱引起的磁化强度、热容量随温度变化规律与块状晶体相同，而一级近似下表现出颗粒膜与块状晶体的偏离．     

Laser-induced ultrafast spin reorientation in the antiferromagnet TmFeO3

All magnetically ordered materials can be divided into two primary classes: ferromagnets and antiferromagnets. Since ancient times, ferromagnetic materials have found vast application areas, from the compass to computer storage and more recently to magnetic random access memory and spintronics. In contrast, antiferromagnetic (AFM) materials, though representing the overwhelming majority of magnetically ordered materials, for a long time were of academic interest only. The fundamental difference between the two types of magnetic materials manifests itself in their reaction to an external magnetic field-in an antiferromagnet, the exchange interaction leads to zero net magnetization. The related absence of a net angular momentum should result in orders of magnitude faster AFM spin dynamics. Here we show that, using a short laser pulse, the spins of the antiferromagnet TmFeO3 can indeed be manipulated on a timescale of a few picoseconds, in contrast to the hundreds of picoseconds in a ferromagnet. Because the ultrafast dynamics of spins in antiferromagnets is a key issue for exchange-biased devices, this finding can expand the now limited set of applications for AFM materials.     

Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

Modern computing technology is based on writing, storing and retrieving information encoded as magnetic bits. Although the giant magnetoresistance effect has improved the electrical read out of memory elements, magnetic writing remains the object of major research efforts. Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric fields and currents, the simple reversal of a high-coercivity, single-layer ferromagnet remains a challenge. Materials with large coercivity and perpendicular magnetic anisotropy represent the mainstay of data storage media, owing to their ability to retain a stable magnetization state over long periods of time and their amenability to miniaturization. However, the same anisotropy properties that make a material attractive for storage also make it hard to write to. Here we demonstrate switching of a perpendicularly magnetized cobalt dot driven by in-plane current injection at room temperature. Our device is composed of a thin cobalt layer with strong perpendicular anisotropy and Rashba interaction induced by asymmetric platinum and AlOx interface layers. The effective switching field is orthogonal to the direction of the magnetization and to the Rashba field. The symmetry of the switching field is consistent with the spin accumulation induced by the Rashba interaction and the spin-dependent mobility observed in non-magnetic semiconductors, as well as with the torque induced by the spin Hall effect in the platinum layer. Our measurements indicate that the switching efficiency increases with the magnetic anisotropy of the cobalt layer and the oxidation of the aluminium layer, which is uppermost, suggesting that the Rashba interaction has a key role in the reversal mechanism. To prove the potential of in-plane current switching for spintronic applications, we construct a reprogrammable magnetic switch that can be integrated into non-volatile memory and logic architectures. This device is simple, scalable and compatible with present-day magnetic recording technology.     

Detecting excitation and magnetization of individual dopants in a semiconductor

An individual magnetic atom doped into a semiconductor is a promising building block for bottom-up spintronic devices and quantum logic gates. Moreover, it provides a perfect model system for the atomic-scale investigation of fundamental effects such as magnetism in dilute magnetic semiconductors. However, dopants in semiconductors so far have not been studied by magnetically sensitive techniques with atomic resolution that correlate the atomic structure with the dopant's magnetism. Here we show electrical excitation and read-out of a spin associated with a single magnetic dopant in a semiconductor host. We use spin-resolved scanning tunnelling spectroscopy to measure the spin excitations and the magnetization curve of individual iron surface-dopants embedded within a two-dimensional electron gas confined to an indium antimonide (110) surface. The dopants act like isolated quantum spins the states of which are governed by a substantial magnetic anisotropy that forces the spin to lie in the surface plane. This result is corroborated by our first principles calculations. The demonstrated methodology opens new routes for the investigation of sample systems that are more widely studied in the field of spintronics-that is, Mn in GaAs (ref. 5), magnetic ions in semiconductor quantum dots, nitrogen-vacancy centres in diamond and phosphorus spins in silicon.     

Phase-locking in double-point-contact spin-transfer devices

Spin-transfer in nanometre-scale magnetic devices results from the torque on a ferromagnet owing to its interaction with a spin-polarized current and the electrons' spin angular momentum. Experiments have detected either a reversal or high-frequency (GHz) steady-state precession of the magnetization in giant magnetoresistance spin valves and magnetic tunnel junctions with current densities of more than 10(7) A cm(-2). Spin-transfer devices may enable high-density, low-power magnetic random access memory or direct-current-driven nanometre-sized microwave oscillators. Here we show that the magnetization oscillations induced by spin-transfer in two 80-nm-diameter giant-magnetoresistance point contacts in close proximity to each other can phase-lock into a single resonance over a frequency range from approximately <10 to >24 GHz for contact spacings of less than about approximately 200 nm. The output power from these contact pairs with small spacing is approximately twice the total power from more widely spaced (approximately 400 nm and greater) contact pairs that undergo separate resonances, indicating that the closely spaced pairs are phase-locked with zero phase shift. Phase-locking may enable control of large arrays of coupled spin-transfer devices with increased power output for microwave oscillator applications.     

Exchange-biased quantum tunnelling in a supramolecular dimer of single-molecule magnets

Various present and future specialized applications of magnets require monodisperse, small magnetic particles, and the discovery of molecules that can function as nanoscale magnets was an important development in this regard. These molecules act as single-domain magnetic particles that, below their blocking temperature, exhibit magnetization hysteresis, a classical property of macroscopic magnets. Such 'single-molecule magnets' (SMMs) straddle the interface between classical and quantum mechanical behaviour because they also display quantum tunnelling of magnetization and quantum phase interference. Quantum tunnelling of magnetization can be advantageous for some potential applications of SMMs, for example, in providing the quantum superposition of states required for quantum computing. However, it is a disadvantage in other applications, such as information storage, where it would lead to information loss. Thus it is important to both understand and control the quantum properties of SMMs. Here we report a supramolecular SMM dimer in which antiferromagnetic coupling between the two components results in quantum behaviour different from that of the individual SMMs. Our experimental observations and theoretical analysis suggest a means of tuning the quantum tunnelling of magnetization in SMMs. This system may also prove useful for studying quantum tunnelling of relevance to mesoscopic antiferromagnets.     

Coherent spin manipulation without magnetic fields in strained semiconductors

A consequence of relativity is that in the presence of an electric field, the spin and momentum states of an electron can be coupled; this is known as spin-orbit coupling. Such an interaction opens a pathway to the manipulation of electron spins within non-magnetic semiconductors, in the absence of applied magnetic fields. This interaction has implications for spin-based quantum information processing and spintronics, forming the basis of various device proposals. For example, the concept of spin field-effect transistors is based on spin precession due to the spin-orbit coupling. Most studies, however, focus on non-spin-selective electrical measurements in quantum structures. Here we report the direct measurement of coherent electron spin precession in zero magnetic field as the electrons drift in response to an applied electric field. We use ultrafast optical techniques to spatiotemporally resolve spin dynamics in strained gallium arsenide and indium gallium arsenide epitaxial layers. Unexpectedly, we observe spin splitting in these simple structures arising from strain in the semiconductor films. The observed effect provides a flexible approach for enabling electrical control over electron spins using strain engineering. Moreover, we exploit this strain-induced field to electrically drive spin resonance with Rabi frequencies of up to approximately 30 MHz.     

激光辅助跨越补偿点磁化反转动力学的实验测量

文章介绍了稀土-过渡族金属铁磁合金薄膜的磁学性质以及超快磁化动力学的一般测量方法，论述了传统实验手段难以测量非可逆的激光辅助跨越补偿点磁化反转动力学的原因．实现了一种新的实验测量方法——光-磁同步动态磁光测量法，并论述了相关原理和技术．以此方法测量得到了GdFeCo薄膜的磁化反转动力学，能够反映真正跨越补偿点磁光记录的过程信息．     

Chiral magnetic order at surfaces driven by inversion asymmetry

Chirality is a fascinating phenomenon that can manifest itself in subtle ways, for example in biochemistry (in the observed single-handedness of biomolecules) and in particle physics (in the charge-parity violation of electroweak interactions). In condensed matter, magnetic materials can also display single-handed, or homochiral, spin structures. This may be caused by the Dzyaloshinskii-Moriya interaction, which arises from spin-orbit scattering of electrons in an inversion-asymmetric crystal field. This effect is typically irrelevant in bulk metals as their crystals are inversion symmetric. However, low-dimensional systems lack structural inversion symmetry, so that homochiral spin structures may occur. Here we report the observation of magnetic order of a specific chirality in a single atomic layer of manganese on a tungsten (110) substrate. Spin-polarized scanning tunnelling microscopy reveals that adjacent spins are not perfectly antiferromagnetic but slightly canted, resulting in a spin spiral structure with a period of about 12 nm. We show by quantitative theory that this chiral order is caused by the Dzyaloshinskii-Moriya interaction and leads to a left-rotating spin cycloid. Our findings confirm the significance of this interaction for magnets in reduced dimensions. Chirality in nanoscale magnets may play a crucial role in spintronic devices, where the spin rather than the charge of an electron is used for data transmission and manipulation. For instance, a spin-polarized current flowing through chiral magnetic structures will exert a spin-torque on the magnetic structure, causing a variety of excitations or manipulations of the magnetization and giving rise to microwave emission, magnetization switching, or magnetic motors.     

Optical detection of liquid-state NMR

Nuclear magnetic resonance (NMR) in liquids and solids is primarily detected by recording the net dipolar magnetic field outside the spin-polarized sample. But the recorded bulk magnetic field itself provides only limited spatial or structural information about the sample. Most NMR applications rely therefore on more elaborate techniques such as magnetic field gradient encoding or spin correlation spectroscopy, which enable spatially resolved imaging and molecular structure analysis, respectively. Here we demonstrate a fundamentally different and intrinsically information-richer modality of detecting NMR, based on the rotation of the polarization of a laser beam by the nuclear spins in a liquid sample. Optical NMR detection has in fact a long history in atomic vapours with narrow resonance lines, but has so far only been applied to highly specialized condensed matter systems such as quantum dots. It has been predicted that laser illumination can shift NMR frequencies and thus aid detection, but the effect is very small and has never been observed. In contrast, our measurements on water and liquid 129Xe show that the complementary effect-the rotation of light polarization by nuclear spins-is readily measurable, and that it is enhanced dramatically in samples containing heavy nuclei. This approach to optical NMR detection should allow correlated optical and NMR spectroscopy on complex molecules, and continuous two-dimensional imaging of nuclear magnetization with spatial resolution limited only by light diffraction.     

Spectroscopy of spontaneous spin noise as a probe of spin dynamics and magnetic resonance

Not all noise in experimental measurements is unwelcome. Certain fundamental noise sources contain valuable information about the system itself-a notable example being the inherent voltage fluctuations (Johnson noise) that exist across any resistor, which allow the temperature to be determined. In magnetic systems, fundamental noise can exist in the form of random spin fluctuations. For example, statistical fluctuations of N paramagnetic spins should generate measurable noise of order N spins, even in zero magnetic field. Here we exploit this effect to perform perturbation-free magnetic resonance. We use off-resonant Faraday rotation to passively detect the magnetization noise in an equilibrium ensemble of paramagnetic alkali atoms; the random fluctuations generate spontaneous spin coherences that precess and decay with the same characteristic energy and timescales as the macroscopic magnetization of an intentionally polarized or driven ensemble. Correlation spectra of the measured spin noise reveal g-factors, nuclear spin, isotope abundance ratios, hyperfine splittings, nuclear moments and spin coherence lifetimes-without having to excite, optically pump or otherwise drive the system away from thermal equilibrium. These noise signatures scale inversely with interaction volume, suggesting a possible route towards non-perturbative, sourceless magnetic resonance of small systems.     

外磁场下单离子各向异性海森堡铁磁体的低温磁性质

文章运用自旋波理论研究了在外磁场下有单离子各向异性的一维海森堡铁磁体的低温磁性质,通过霍斯坦因-普利马科夫变换得到近似的哈密顿量,详细讨论了磁化强度、磁化率、内能、比热等随温度、各向异性参数和外磁场的变化情况,推导出内能U(T)和比热Cm(T)随温度的变化规律U(T)～Tα与Cm(T)～Tβ,并得出指数α,β口与单离子...     

尖晶石结构Li1.33Mn1.67O4的磁学性质

采用固相烧结法制备尖晶石结构Li_1.33Mn_1.67O₄样品. 不同磁场下的直流磁化率曲线、 磁滞回线和交流磁化率均表明该样品在低温呈团簇自旋玻璃态. 通过计算材料的几何失措因子, 可知掺杂非磁性Li离子破坏了失措的Kagome点阵, 从而诱导铁磁与反铁磁相互作用的竞争, 使体系呈自旋玻璃态.      

磁粉探伤机新型磁化装置设计及智能化控制研究

针对铁路和风电行业中大量大齿圈工件尺寸较大、其周向和径向不能同时进行磁化探伤、工件探伤率受到限制和影响的状况,设计了适用于大齿圈工件磁粉探伤机的新型磁化装置。该装置基于PLC的磁粉探伤控制系统和图像自动识别系统,采用开合式闭路磁轭和开合式矩形线圈的结构,磁化检测时将开合式闭路磁轭和开合式矩形线圈围绕在大齿圈工件单边齿圈的周围,使大齿圈同时产生同向、径向、轴向等多方向的磁场;喷洒荧光磁粉悬液的工件表面在磁场的作用下,磁粉被吸附在漏磁场处形成磁痕,荧光磁粉在紫外光照射下发射出荧光;用高像素全帧CCD摄像机对荧光进行摄像,并将荧光磁粉图像转换为视频电子信号,再通过信号采集卡将视频信号转换为计算机能处理的数字图像信号,从而完成工件表面缺陷生成磁痕的自动检测。智能磁粉探伤样机的测试表明,该新型磁化装置可实现同时对大齿圈工件的周向、径向和轴向进行全方位的多向磁化,工件无磁化盲区,检测精度高。     

Optically programmable electron spin memory using semiconductor quantum dots

The spin of a single electron subject to a static magnetic field provides a natural two-level system that is suitable for use as a quantum bit, the fundamental logical unit in a quantum computer. Semiconductor quantum dots fabricated by strain driven self-assembly are particularly attractive for the realization of spin quantum bits, as they can be controllably positioned, electronically coupled and embedded into active devices. It has been predicted that the atomic-like electronic structure of such quantum dots suppresses coupling of the spin to the solid-state quantum dot environment, thus protecting the 'spin' quantum information against decoherence. Here we demonstrate a single electron spin memory device in which the electron spin can be programmed by frequency selective optical excitation. We use the device to prepare single electron spins in semiconductor quantum dots with a well defined orientation, and directly measure the intrinsic spin flip time and its dependence on magnetic field. A very long spin lifetime is obtained, with a lower limit of about 20 milliseconds at a magnetic field of 4 tesla and at 1 kelvin.