Preparation of CuInSe2 thin films by four-step process |
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| Authors: | Yan-lai Wang Hong-bo Nie Yi-min Wang |
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| Affiliation: | a School of Materials Science and Technology, University of Science and Technology Beijing, Beijing 100083, China
b Wuxi ASIC Micro Electronics Co., Ltd., Wuxi 214028, China |
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| Abstract: | A simple process for the deposition of CuInSe2 thin films was described. The CuInSe2 compound was prepared by selenization of Cu-In alloy precursors, which were electrodeposited at a constant current. The selenized precursors were compacted and then annealed. The films were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The results indicate that single-phase CuInSe2 is formed at 250°C and its crystallinity of this phase is improved as the annealing temperature rises. The losses of In occur in selenization process. The dense CuInSe2 film with comparatively smooth surface can be obtained by compaction under the pressure of 200 MPa. |
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| Keywords: | CuInSe2 electrodeposition selenization compaction |
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